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Description
PTB 20193
60 Watts, 1.8–1.9 GHz
Cellular Radio RF Power Transistor
The 20193 is a class AB, NPN common emitter RF power transistor
intended for 26 Vdc operation from 1.8 to 1.9 GHz. It is rated at 60
watts minimum output power and may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability . 100% lot
traceability is standard.
Typical Output Pow er vs. Input Pow er
70
60
50
40
30
20
Output Power (Watts)
10
135791113
Input Power (Watts)
VCC = 26 V
I
= 150 mA
CQ
f = 1.9 GHz
Maximum Ratings
60 Watts, 1.8–1.9 GHz
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
20193
LOT CODE
Package 20223
Parameter Symbol Value Unit
Collector-Emitter Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T
Above 25°C derate by 1.33 W/°C
Storage Temperature Range T
Thermal Resistance (T
9/28/98
flange
= 25° C P
flange
= 70° C) R
1
CER
CES
EBO
C
D
STG
θJC
55 Vdc
55 Vdc
4.0 Vdc
8 Adc
233 W
–40 to +150 °C
0.75 °C/W
PTB 20193
e
Electrical Characteristics (100% Tested)
Characteristics Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E IB = 0 A, IC = 60 mA, RBE = 27 Ω V
Breakdown Voltage C to E VBE = 0 V, IC = 60 mA V
Breakdown Voltage E to B IC = 0 V, IE = 25 mA V
DC Current Gain VCE = 5 V, IC = 300 mA H
(BR)CER
(BR)CES
(BR)EBO
fe
55 — — Volts
55 — — Volts
4 5 — Volts
20 50 120 —
RF Specifications (100% Tested)
Characteristics Symbol Min Typ Max Units
Gain
(V
Power Output at 1 dB Compression
(V
Collector Efficiency
(V
Load Mismatch Tolerance
(V
f = 1.9 GHz—all phase angles at frequency of test)
= 26 Vdc, P
CC
= 26 Vdc, ICQ = 150 mA, f = 1.9 GHz) P-1dB 60 — — Watts
CC
= 26 Vdc, P
CC
= 26 Vdc, P
CC
= 15 W, ICQ = 150 mA, f = 1.9 GHz) G
out
= 60 W, ICQ = 150 mA, f = 1.9 GHz) η
out
= 30 W, ICQ = 150 mA, Ψ — — 5:1 —
out
pe
C
8.0 8.5 — dB
43 — — %
Impedance Data (data shown for fixed-tuned broadband circuit)
(V
= 26 Vdc, P
CC
= 60 W, ICQ = 150 mA)
out
Z Source Z Load
Frequency Z Source Z Load
GHz R jX R jX
1.80 4.0 -1.6 2.7 0.65
1.90 3.6 -.08 2.6 1.90
Z0 = 50 Ω
5/19/98
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