Ericsson PTB20191 Datasheet

e

Description

PTB 20191

12 Watts, 1.78–1.92 GHz

RF Power Transistor

The 20191 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.78 to 1.92 GHz. It is rated at 12
watts (CW) minimum output power, or 15 watts (PEP) output power.
Ion implantation, nitride surface passivation and gold metallization
are used to ensure excellent device reliability. 100% lot traceability is
standard.

Typical Output Pow er vs. Input Pow er

25

20

15

10

VCC = 26 V

5

Output Power (Watts)

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

Input Power (Watts)

I

= 100 mA

CQ

f = 1.9 GHz

 Class AB Characteristics
 26 Volt, 1.9 GHz Characterization

- Output Power = 12 W(CW), 15 W(PEP)

 Internal Input Matching
 Gold Metallization
 Silicon Nitride Passivated

20191

LOT CODE

Package 20226

Maximum Ratings

Parameter Symbol Value Unit

Collector-Emitter Voltage V
Collector-Base Voltage (emitter open) V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T

Above 25°C derate by 0.34 W/°C
Storage Temperature Range T

Thermal Resistance (T

9/28/98

flange

= 25°C P

flange

= 70°C) R

1

CEO
CBO
EBO

C

D

STG

θJC

20 Vdc
50 Vdc

4.0 Vdc

2.8 Adc
60 Watts

–40 to +150 °C

2.90 °C/W

PTB 20191

5

e

Electrical Characteristics (100% Tested)

Characteristic Conditions Symbol Min Typ Max Units

Breakdown Voltage C to E IB = 0 A, IC = 5 mA, RBE = 27 Ω V
Breakdown Voltage C to B IC = 5 mA V
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V
DC Current Gain VCE = 5 V, IC = 200 mA h
Output Capacitance VCB = 26 V, IE = 0 A, f = 1 MHx C

(BR)CER
(BR)CBO
(BR)EBO

FE

ob

50 — — Volts
50 — — Volts

4 — — Volts
20 — 100 —
—7—pF

RF Specifications (100% Tested)

Characteristic Symbol Min Typ Max Units

Gain

(V

Output Power at 1 dB Compression

(V

Collector Efficiency

(V

Intermodulation Distortion

(V
f1 = 1.899 GHz, f2 = 1.901 GHz)

Load Mismatch Tolerance

(V
f = 1.9 GHz—all phase angles at frequency of test)

= 26 Vdc, P

CC

= 26 Vdc, ICQ = 100 mA, f = 1.9 GHz) P-1dB 10 12 — Watts

CC

= 26 Vdc, P

CC

= 26 Vdc, P

CC

= 26 Vdc, P

CC

= 12 W, ICQ = 100 mA, f = 1.9 GHz) G

out

= 12 W, ICQ = 100 mA, f = 1.9 GHz) η

out

= 15 W(PEP), ICQ = 100 mA, IMD -30 -32 — dBc

out

= 12 W, ICQ = 100 mA, Ψ — — 5:1 —

out

pe

C

8.0 10.0 — dB

35 40 — %

Impedance Data (data shown for fixed-tuned broadband circuit)

(V

= 26 Vdc, P

CC

Frequency Z Source Z Load

GHz R jX R jX

1.80 10.0 -4.2 2.6 0.9

1.85 9.1 -3.1 2.2 1.2

1.90 8.1 -2.0 1.6 1.4

= 12 W, ICQ = 100 mA)

out

Z Source Z Load

2

Z0 = 50 Ω

/19/98