Ericsson PTB20190 Datasheet

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Description

PTB 20190

175 Watts, 470–806 MHz

Digital Television Power Transistor

The 20190 is a class AB, NPN, common emitter RF power transistor
intended for 28 Vdc operation across the 470 to 806 MHz UHF TV
frequency band. Rated at 175 watts output power, it is specifically
intended to operate uncorrected at 125 watts P-Sync (tested to EIA
Standard 4.1.3, Section 5, Method B for class AB transmitters at 125
watts P-sync) or at a minimum of 175 watts in PEP applications. It
may also be operated at comparable power levels for ATV broad­casting. Ion implantation, nitride surface passivation and gold metalli­zation ensure excellent device reliability. 100% lot traceability is
standard.

Typical Gain vs. Frequency

10.5

10.0

9.5

9.0

8.5

Gain (dB)

8.0

7.5
470 526 582 638 694 750 806

Frequency (MHz)

VCC = 28 V
I

= 2 x 100 mA

CQ

Pout = 175 W

 175 Watts, 470–806 MHz
 Class AB Characteristics
 50% Collector Efficiency at 175 Watts
 Gold Metallization
 Silicon Nitride Passivated

20190

LOT CODE

Package 20224

Maximum Ratings

Parameter Symbol Value Unit

Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T

Above 25°C derate by 1.89 W/°C
Storage Temperature Range T

Thermal Resistance (T

9/28/98

flange

= 25°C P

flange

= 70°C) R

1

CER
CBO
EBO

C

D

STG

θJC

40 Vdc
60 Vdc

4.0 Vdc

25.0 Adc
330 Watts

–40 to +150 °C

0.53 °C/W

PTB 20190

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Electrical Characteristics (100% Tested)

Characteristic Conditions Symbol Min Typ Max Units

Breakdown Voltage C to E IB = 0 A, IC = 100 mA V
Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V
DC Current Gain VCE = 5 V, IC = 1.0 A h

(BR)CEO
(BR)CES
(BR)EBO

FE

25 30 — Volts
55 60 — Volts

3.5 5 — Volts
20 50 100 —

RF Specifications (100% Tested)

Characteristic Symbol Min Typ Max Units

Gain

(V

Collector Efficiency

(V

Intermodulation Distortion (Two Tone)

(V
f = 800 MHz, ∆f = 1.0 MHz)

In-Channel Intermodulation Distortion

(P-Sync = 125 W + Aural,
EIA Std 4.1.3 Sect 5 Method B)

Load Mismatch Tolerance

(V
f = 800 MHz—all phase angles at frequency of test)

= 28 Vdc, P

CC

= 28 Vdc, P

CC

= 28 Vdc, P

CC

= 28 Vdc, P

CC

= 50 W, ICQ = 2 x 100 mA, f = 800 MHz) G

OUT

= 125 W, ICQ = 2 x 100 mA, f = 800 MHz) η

OUT

= 125 W(PEP), ICQ = 2 x 100 mA, IMD — 40 — dBc

OUT

= 125 W(PEP), ICQ = 2 x 100 mA, Ψ — — 3:1 —

OUT

pe

C

IM Product

+/- 920 kHz

8.0 9.5 — dB

—45—%

— -52 — dB

P-sync

Impedance Data
V

= 28 Vdc, P

CC

Frequency Z Source Z Load

MHz R jX R jX

470 1.87 -4.1 2.42 1.74
630 0.76 -3.9 3.34 -1.49
800 2.12 -3.8 2.72 -3.36

= 175 W, ICQ = 2 x 100 mA

OUT

Z Source Z Load

2

Z0 = 50 Ω

/11/98