Ericsson PTB20189 Datasheet

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Description

PTB 20189

1 Watt, 900–960 MHz

Cellular Radio RF Power Transistor

The 20189 is an NPN, common emitter RF power transistor intended
for 25 Vdc class A or AB operation from 900 to 960 MHz. Rated at 1
watt minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability . 100% lot
traceability is standard.

Typical Output Pow er and Efficiency vs. Input Power

2.0

VCC = 25 V
I

= 175 mA

CQ

1.5

f = 960 MHz

1.0

0.5

0.0

Output Power (Watts)

0.00 0.02 0.04 0.06 0.08 0.10

Input Power (Watts)

80

60

40

20

Efficiency (%)

0

 25 Volt, 900–960 MHz Characteristics

- Output Power = 1 Watt

- Gain = 12 dB Min at 1 Watt

 Class A/AB Characteristics
 Gold Metallization
 Silicon Nitride Passivated
 Surface Mountable
 Available in Tape and Reel

20189

LOT CODE

Package 20227

Maximum Ratings

Parameter Symbol Value Unit

Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T

Above 25°C derate by 0.063 W/°C
Storage Temperature Range T

Thermal Resistance (T

9/28/98

flange

= 25°C P

flange

= 70°C) R

1

CER
CBO
EBO

C

D

STG

θJC

40 Vdc
50 Vdc

4.0 Vdc

0.5 Adc
11 Watts

–40 to +150 °C

16.0 °C/W

PTB 20189

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Electrical Characteristics (100% Tested)

Characteristic Conditions Symbol Min Typ Max Units

Breakdown Voltage C to E IB = 0 A, IC = 5 mA V
Breakdown Voltage C to E VBE = 0 V, IC = 5 mA V
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V
DC Current Gain VCE = 5 V, IC = 1.5 A h

(BR)CEO
(BR)CES
(BR)EBO

FE

28 32 — Volts
55 70 — Volts

3.5 5 — Volts
20 50 120 —

RF Specifications (100% Tested)

Characteristic Symbol Min Typ Max Units

Gain

(V

Collector Efficiency

(V

Load Mismatch Tolerance

(V
f = 960 MHz—all phase angles at frequency of test)

= 25 Vdc, P

CC

= 25 Vdc, P

CC

= 25 Vdc, P

CC

= 1 W, ICQ = 175 mA, f = 960 MHz) G

out

= 1 W, ICQ = 175 mA, f = 960 MHz) η

out

= 1 W, ICQ = 175 mA, Ψ — — 10:1 —

out

pe

C

12 14 — dB

—25—%

Impedance Data (data shown for fixed-tuned broadband circuit)

(V

= 25 Vdc, P

CC

= 1 W, ICQ = 175 mA)

out

Z Source Z Load

Frequency Z Source Z Load

MHz R jX R jX

900 3.0 -0.4 9.0 6.0
930 3.0 0.0 9.0 7.5
960 2.9 0.5 9.2 8.9

2