Ericsson PTB20188 Datasheet
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Description
PTB 20188
4 Watts P-Sync, 470–860 MHz
UHF TV Linear Power Transistor
The 20188 is an NPN common emitter UHF power transistor intended
for 25 Vdc class A operation from 470 to 860 MHz. It is rated at 4
watts output power, and may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Typical Output Pow er vs. Input Pow er
6
5
4
3
2
Output Power (Watts)
1
0.18 0.37 0.56 0.75 0.94 1.13
Input Power (Watts)
VCC = 25 V
I
= 850 mA
C
f = 860 MHz
Maximum Ratings
4 Watts (P-sync), 470–860 MHz
Class A Characteristics
Gold Metallization
Silicon Nitride Passivated
20188
LOT CODE
Package 20206
Parameter Symbol Value Unit
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T
Above 25°C derate by 0.4 W/°C
Storage Temperature Range T
Thermal Resistance (T
9/28/98
flange
= 25°C P
flange
= 70°C) R
1
CER
CBO
EBO
C
D
STG
θJC
40 Vdc
65 Vdc
4.0 Vdc
6.7 Adc
65 Watts
–40 to +150 °C
4.5 °C/W
PTB 20188
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Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E IB = 0 A, IC = 50 mA V
Breakdown Voltage C to E VBE = 0 V, IC = 50 mA V
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V
DC Current Gain VCE = 5 V, IC = 250 mA h
(BR)CEO
(BR)CES
(BR)EBO
FE
25 30 — Volts
55 70 — Volts
3.5 5 — Volts
20 50 100 —
RF Specifications
Characteristic Symbol Min Typ Max Units
Gain
(V
Vision = -8dB, f2 = 863.5 MHz, Subcarrier = -16dB,
f3 = 864.5 MHz, Sound = -7dB)
Intermodulation Distortion
(V
Vision = -8dB, f2 = 863.5 MHz, Subcarrier = -16dB,
f3 = 864.5 MHz, Sound = -7dB)
Load Mismatch Tolerance
(V
Vision = -8dB, f2 = 863.5 MHz, Subcarrier = -16dB,
f3 = 864.5 MHz, Sound = -7dB—all phase angles at
frequency of test)
= 25 Vdc, IC = 850 mA, P
CC
= 25 Vdc, IC = 850 mA, P
CC
= 25 Vdc, IC = 850 mA, P
CC
= 4 W(P-sync), f1 = 860 MHz, G
out
= 4 W(P-sync), f1 = 860 MHz, IMD — — -58 dBc
out
= 4 W(P-sync), f1 = 860 MHz, Ψ — — 3:1 —
out
pe
7.0 — — dB
Impedance Data (data shown for fixed-tuned broadband circuit)
(V
= 25 Vdc, IC = 850 mA, P
CC
Z Source Z Load
Frequency Z Source Z Load
MHz R jX R jX
470 1.1 -1.7 12.2 +9.8
665 1.2 -3.4 8.3 +8.8
860 0.7 -4.7 4.3 +6.9
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
5/14/98
= 4 W(P-sync))
out
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
2
Z0 = 50 Ω
Specifications subject to change without notice.
LF
© 1997 Ericsson Inc.
EUS/KR 1301-PTB 20188 Uen Rev. B 09-28-98
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