Ericsson PTB20187 Datasheet
e
Description
PTB 20187
4 Watts, 1.8–2.0 GHz
Cellular Radio RF Power Transistor
The 20187 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.80 to 2.00 GHz. Rated at 4
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability . 100% lot
traceability is standard.
Typical Output Pow er vs. Input Pow er
6
5
4
VCC = 26 V
I
= 50 mA
3
Output Power (Watts)
2
0.0 0.2 0.4 0.6 0.8
Input Power (Wa tts)
CQ
f = 1.8-2.0 GHz
4 Watts, 1.80–2.00 GHz
Class AB Characteristics
30% Collector Efficiency at 4 Watts
Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel
20187
LOT CODE
Package 20227
Maximum Ratings
Parameter Symbol Value Unit
Collector-Emitter Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T
Above 25°C derate by 0.112 W/°C
Storage Temperature Range T
Thermal Resistance (T
9/28/98
flange
= 25°C P
flange
= 70°C) R
1
CER
CES
EBO
C
D
STG
θJC
50 Vdc
50 Vdc
4.0 Vdc
1.0 Adc
19.7 Watts
–40 to +150 °C
8.9 °C/W
PTB 20187
e
Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E IB = 0 A, IC = 10 mA V
Breakdown Voltage C to E VBE = 0 V, IC = 10 mA V
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V
DC Current Gain VCE = 5 V, IC = 50 mA h
(BR)CEO
(BR)CES
(BR)EBO
FE
20 — — Volts
50 — — Volts
4 5 — Volts
20 40 — —
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(V
Power Output at 1 dB Compression
(V
Collector Efficiency
(V
Load Mismatch Tolerance
(V
f = 2.00 GHz—all phase angles at frequency of test)
= 26 Vdc, P
CC
= 26 Vdc, ICQ = 50 mA, f = 2.00 GHz) P-1dB 4 6 — Watts
CC
= 26 Vdc, P
CC
= 26 Vdc, P
CC
= 4 W, ICQ = 50 mA, f = 2.00 GHz) G
out
= 4 W, ICQ = 50 mA, f = 2.00 GHz) η
out
= 4 W, ICQ = 50 mA, Ψ — — 5:1 —
out
pe
C
810—dB
30 — — %
Impedance Data (data shown for fixed-tuned broadband circuit)
(V
= 26 Vdc, P
CC
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
= 4 W, ICQ = 50 mA)
out
Z Source Z Load
Frequency Z Source Z Load
GHz R jX R jX
1.80 14.49 -7.50 11.49 -10.15
1.90 12.30 -6.16 7.23 -6.29
2.00 10.00 -3.55 4.41 -1.34
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
2
Specifications subject to change without notice.
LF
© 1996 Ericsson Inc.
EUS/KR 1301-PTB 20187 Uen Rev. B 09-28-98
5/19/98
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