Ericsson PTB20180 Datasheet
e
Description
PTB 20180
2.5 Watts, 1.8–2.0 GHz
Cellular Radio RF Power Transistor
The 20180 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability . 100% lot
traceability is standard.
Typical Output Pow er vs. Input Pow er
1.0
0.8
0.6
0.4
VCC = 26 V
0.2
Output Power (Watts)
0.0
0.00 0.02 0.04 0.06 0.08 0.10
Input Power (Watts)
I
= 20 mA
CQ
f = 2 GHz
2.5 Watts, 1.8–2.0 GHz
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel
20180
LOT CODE
Package 20227
Maximum Ratings
Parameter Symbol Value Unit
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T
Above 25°C derate by 0.057 W/°C
Storage Temperature Range T
Thermal Resistance (T
9/28/98
flange
= 25°C P
flange
= 70°C) R
1
CER
CBO
EBO
C
D
STG
θJC
50 Vdc
50 Vdc
4.0 Vdc
0.5 Adc
10.0 Watts
–40 to +150 °C
17.5 °C/W
PTB 20180
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Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E IB = 0 A, IC = 10 mA, RBE = 22 Ω V
Breakdown Voltage C to E VBE = 0 V, IC = 5 mA V
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V
DC Current Gain VCE = 5 V, IC = 250 mA h
(BR)CER
(BR)CES
(BR)EBO
FE
50 — — Volts
50 — — Volts
4 5 — Volts
20 40 — —
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(V
Power Output at 1 dB Compression
(V
Load Mismatch Tolerance
(V
f = 2.0 GHz—all phase angles at frequency of test)
= 26 Vdc, P
CC
= 26 Vdc, ICQ = 20 mA, f = 2.0 GHz) P-1dB 2.5 4.0 — Watts
CC
= 26 Vdc, P
CC
= 1.0 W, ICQ = 20 mA, f = 2.0 GHz) G
out
= 2.5 W, ICQ = 20 mA, Ψ — — 5:1 —
out
pe
8 9.5 — dB
Impedance Data (data shown for fixed-tuned broadband circuit)
(V
= 26 Vdc, P
CC
= 2.5 W, ICQ = 20 mA)
out
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Z Source Z Load
Frequency Z Source Z Load
GHz R jX R jX
1.8 28.3 -18.1 8.5 8.2
1.9 21.7 -8.0 8.0 12.5
2.0 17.2 5.9 6.5 16.3
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
Specifications subject to change without notice.
LF
© 1996 Ericsson Inc.
EUS/KR 1301-PTB 20180 Uen Rev. D 09-28-98
5/19/98
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