Ericsson PTB20179 Datasheet

e

Description

PTB 20179

0.4 Watt, 1.8–2.0 GHz

Cellular Radio RF Power Transistor

The 20179 is an NPN, common emitter RF power transistor intended
for class A, 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 0.4 watt
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability . 100% lot
traceability is standard.

Typical Output Pow er vs. Input Power

1.0

0.8

0.6

0.4

0.2

Output Power (Watts)

0.0

VCC = 26 V
I

= 120 mA

C

f = 2.0 GHz

0.00 0.02 0.04 0.06 0.08 0.10 0.12

Input Power (Watts)

 0.4 Watt, 1.8–2.0 GHz
 Class A Characteristics
 Gold Metallization
 Silicon Nitride Passivated
 Surface Mountable
 Available in Tape and Reel

20179

LOT CODE

Package 20227

Maximum Ratings

Parameter Symbol Value Unit

Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T

Above 25°C derate by 0.031 W/°C
Storage Temperature Range T

Thermal Resistance (T

9/28/98

flange

= 25°C P

flange

= 70°C) R

1

CER
CBO
EBO

C

D

STG

θJC

50 Vdc
50 Vdc

4.0 Vdc

0.5 Adc

5.4 Watts

–40 to +150 °C

32.3 °C/W

PTB 20179

5

e

Electrical Characteristics (100% Tested)

Characteristic Conditions Symbol Min Typ Max Units

Breakdown Voltage C to E IB = 0 A, IC = 10 mA, RBE = 22 Ω V
Breakdown Voltage C to E VBE = 0 V, IC = 5 mA V
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V

(BR)CER
(BR)CES
(BR)EBO

DC Current Gain VCE = 5 V, IC = 250 mA h

FE

50 — — Volts
50 — — Volts

4 5 — Volts

20 40 — —

RF Specifications (100% Tested)

Characteristic Symbol Min Typ Max Units

Gain

(V

Output Power at 1 dB Compressed

(V

Load Mismatch Tolerance

(V
f = 2.0 GHz—all phase angles at frequency of test)

= 26 Vdc, P

CC

= 26 Vdc, IC = 120 mA, f = 2.0 GHz) P-1dB 0.4 0.6 — Watts

CC

= 26 Vdc, P

CC

= 0.2 W, IC = 120 mA, f = 2.0 GHz) G

out

= 0.2 W, IC = 120 mA, Ψ — — 5:1 —

out

pe

810—dB

Typical Performance

P

, G ain & E fficiency

OUT

10

Gain (dB)

8

6

4

2

Output Power (W )

0

Gain (dB) & Output Power (W)

1750 1800 1850 1900 1950 2000 2050

Frequency (MHz)

(at P-1dB)

Efficiency (%)

VCC = 26 V
I

= 120 mA

C

vs. Fr equency

30

25

20

15

10

5

Inter modulation Distortion vs. Output Pow er

Efficiency (%)

IMD (dBc)

0

VCC = 26 V

-10

I

= 120 mA

C

-20

f

= 1999.9 MHz

1

-30

f

= 2000.0 MHz

2

-40

-50

-60

-70

0.0 0.2 0.4 0.6 0.8

IM3

IM5

IM7

Output Power (Watts-PEP)

2

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