Ericsson PTB20177 Datasheet
e
Description
PTB 20177
150 Watts, 925–960 MHz
Cellular Radio RF Power Transistor
The 20177 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 925 to 960 MHz. Rated at 150
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability . 100% lot
traceability is standard.
Typical Output Pow er vs. Input Pow er
200
160
120
80
VCC = 26 V
40
Output Power (Watts)
0
0 5 10 15 20 25 30
Input Power (Watts)
I
= 400 mA Total
CQ
f = 960 MHz
26 Volt, 960 MHz Characteristics
- Output Power = 150 Watts (PEP)
- Collector Efficiency = 50 Min at 150 Watts
- IMD = -28 dBc Max at 150 Watts (PEP)
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
20177
LOT CODE
Package 20224
Maximum Ratings
Parameter Symbol Value Unit
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T
Above 25°C derate by 1.89 W/°C
Storage Temperature Range T
Thermal Resistance (T
9/28/98
flange
= 25°C P
flange
= 70°C) R
1
CER
CBO
EBO
C
D
STG
θJC
40 Vdc
60 Vdc
4.0 Vdc
25.0 Adc
330 Watts
–40 to +150 °C
0.53 °C/W
PTB 20177
5
e
Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E IB = 0 A, IC = 100 mA V
Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V
DC Current Gain VCE = 5 V, IC = 1 A h
(BR)CEO
(BR)CES
(BR)EBO
FE
25 30 — Volts
55 70 — Volts
3.5 5 — Volts
20 50 100 —
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(V
f = 960 MHz)
Gain at PEP
(V
f = 960 MHz)
Collector Efficiency
(V
f = 960 MHz)
Collector Efficiency at PEP
(V
f = 960 MHz)
Intermodulation Distortion
(V
f1 = 959.9 MHz, f2 = 960.0 MHz)
Load Mismatch Tolerance
(V
f = 960 MHz—all phase angles at frequency of test)
= 26 Vdc, P
CC
= 26 Vdc, P
CC
= 26 Vdc, P
CC
= 26 Vdc, P
CC
= 26 Vdc, P
CC
= 26 Vdc, P
CC
= 150 W, ICQ = 400 mA Total, G
out
= 150 W(PEP), ICQ = 400 mA Total, G
out
= 150 W, ICQ = 400 mA Total, η
out
= 150 W(PEP), ICQ = 400 mA Total, η
out
= 150 W(PEP), ICQ = 400 mA Total, IMD — -30 -28 dBc
out
= 150 W(PEP), ICQ = 400 mA Total, Ψ — — 5:1 —
out
pe
pe
C
C
7.5 8.5 — dB
89—dB
50 — — %
35 — — %
Impedance Data (data shown for fixed-tuned broadband circuit)
(V
= 26 Vdc, P
CC
/19/98
= 150 W, ICQ = 400 mA Total)
out
Z Source Z Load
Frequency Z Source Z Load
MHz R jX R jX
925 4.3 -3.6 3.8 -1.8
940 4.1 -3.6 3.5 -1.4
960 3.7 -3.4 3.1 -0.9
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