e
Description
PTB 20176
5 Watts, 1.78–1.92 GHz
RF Power Transistor
The 20176 is a common emitter RF power transistor intended for 26
Vdc operation from 1.78 to 1.92 GHz. Rated at 5 watts minimum
output power, it is specifically designed for class A or AB linear power
amplifier applications. Ion implantation, nitride surface passivation
and gold metallization are used to ensure excellent device reliability.
100% lot traceability is standard.
Typical Output Pow er vs. Input Pow er
10
8
6
4
VCC = 26 V
2
Output Power (Watts)
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Input Power (Watts)
I
= 30 mA
CQ
f = 1850 MHz
Maximum Ratings
26 Volt, 1.85 GHz Characteristics
Class A/AB
Internally Matched
Gold Metallization
Silicon Nitride Passivated
20176
LOT CODE
Package 20201
Parameter Symbol Value Unit
Collector-Emitter Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T
Above 25°C derate by 0.12 W/°C
Storage Temperature T
Thermal Resistance (T
9/28/98
flange
= 25°C P
flange
= 70°C) R
1
CEO
CES
EBO
C
D
stg
θJC
20 Vdc
45 Vdc
4.0 Vdc
1 Adc
21 Watts
150 °C
8.5 °C/W
PTB 20176
e
Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E IB = 0 A, IC = 5 mA, RBE = 22 Ω V
Breakdown Voltage C to B IB = 0 A, IC = 5 mA V
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V
DC Current Gain VCE = 5 V, IC = 200 mA h
Output Capacitance VCB = 26 V, IE = 0 A, f = 1 MHz C
(BR)CER
(BR)CBO
(BR)EBO
FE
ob
45 — — Volts
45 — — Volts
4 — — Volts
20 — 100 —
—7—pF
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(V
Power Output at 1 dB Compression
(V
Collector Efficiency
(V
Intermodulation Distortion
(V
f1 = 1.8800 GHz, f2 = 1.8801 GHz)
Load Mismatch Tolerance
(V
f = 1.85 GHz—all phase angles at frequency of test)
= 26 Vdc, P
CC
= 26 Vdc, ICQ = 30 mA, f = 1.85 GHz) P-1dB 6.3 7.9 — Watts
CC
= 26 Vdc, P
CC
= 26 Vdc, P
CC
= 26 Vdc, P
CC
= 5 W, ICQ = 30 mA, f = 1.85 GHz) G
out
= 5 W, ICQ = 30 mA, f = 1.85 GHz) η
out
= 5 W(PEP), ICQ = 30 mA, IMD -30 -35 — dBc
out
= 5 W, ICQ = 30 mA, Ψ — — 10:1 —
out
pe
C
11 12 — dB
38 42 — %
Impedance Data (data shown for fixed-tuned broadband circuit)
(V
= 26 Vdc, P
CC
= 5 W, ICQ = 30 mA)
out
Z Source Z Load
Frequency Z Source Z Load
GHz R jX R jX
1.800 7.8 -7.0 6.7 1.5
1.850 7.6 -6.4 6.7 2.3
1.900 7.5 -5.8 6.7 3.1
2
6/24/97