Ericsson PTB20174 Datasheet

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Description
PTB 20174
90 Watts, 1400–1600 MHz
RF Power Transistor
The 20174 is an NPN, common emitter RF power transistor intended for 26 Vdc class AB operation from 1400 to 1600 MHz. Rated at 90 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability . 100% lot traceability is standard.
Typical Output Pow er and Efficiency vs. Input Power
120
VCC = 26 V
100
Output Power (Watts)
= 250 mA Total
I
CQ
f = 1490 MHz
0
0 5 10 15 20
Input Power (Wa tts)
Efficiency (%
Class AB CharacteristicsSpecified 26 Volts, 1490 MHz
- Output Power = 90 Watts
- IMD at 90 Watts = -28 dBc max.
- Gain at 90 Watts = 7.5 dB min.
Gold MetallizationSilicon Nitride Passivated
20174
LOT CODE
Package 20224
Maximum Ratings
Parameter Symbol Value Unit
Collector-Emitter Voltage (collector shorted) V Collector-Base Voltage (emitter open) V Emitter-Base Voltage (collector open) V Collector Current (continuous) I Total Device Dissipation at T
Above 25°C derate by 1.67 W/°C Storage Temperature T
Thermal Resistance (T
9/28/98
flange
= 25°C P
flange
= 70°C) Rθ
1
CES CBO EBO
C
D
STG
JC
52 Vdc 50 Vdc
4.0 Vdc 15 Adc
290 Watts
150 °C
0.6 °C/W
PTB 20174
e
Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E IB = 0 A, IC = 100 mA V Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V Breakdown Voltage E to B IC = 0 A, IE = 5 mA V DC Current Gain VCE = 5 V, IC = 1 A h
(BR)CEO (BR)CES (BR)EBO
FE
21 Volts 52 70 Volts
3.5 5 Volts 20 50 100
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(V f = 1491 MHz)
Collector Efficiency
(V f = 1491 MHz)
Load Mismatch Tolerance
f = 1491 MHz—at all phase angles)
= 26 Vdc, P
CC
= 26 Vdc, P
CC
(VCC = 26 Vdc, P
= 90 W, ICQ = 250 mA Total, G
out
= 90 W, ICQ = 250 mA Total, η
out
= 45 W, ICQ = 250 mA Total,
out
pe
C
Ψ 3:1
7.5 8.3 dB
40 45 %
Impedance Data (data shown for fixed-tuned broadband circuit)
(
VCC = 26 Vdc, P
= 90 W, ICQ = 250 mA Total
out
)
Z0 = 50
Z Source Z Load
Frequency Z Source Z Load
MHz R jX R jX
1400 10.0 -7.8 6.8 -6.8 1450 9.1 -6.7 5.5 -5.8 1500 8.9 -4.9 4.6 -4.8 1550 8.0 -2.7 4.2 -3.6 1600 8.0 1.0 3.6 -1.9
9/28/98
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