Ericsson PTB20170 Datasheet

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Description

PTB 20170

30 Watts, 1.8–2.0 GHz

Cellular Radio RF Power Transistor

The 20170 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 30 watts
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability . 100% lot
traceability is standard.

Typical Output Pow er vs. Input Power

40
35
30
25
20
15
10

Output Power (Watts)

5
0

01234567

Input Power (Watts)

VCC = 26 V
I

= 100 mA

CQ

f = 2.0 GHz

 30 Watts, 1.8–2.0 GHz
 Class AB Characteristics
 Gold Metallization
 Silicon Nitride Passivated

20170

LOT CODE

Package 20209

Maximum Ratings

Parameter Symbol Value Unit

Collector-Emitter Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T

Above 25°C derate by 0.7 W/°C
Storage Temperature Range T

Thermal Resistance (T

9/28/98

flange

= 25°C P

flange

= 70°C) R

1

CER
CES
EBO

C

D

STG

θJC

55 Vdc
55 Vdc

4.0 Vdc

6.7 Adc

123 Watts

–40 to +150 °C

1.43 °C/W

PTB 20170

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)

5

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Electrical Characteristics (100% Tested)

Characteristic Conditions Symbol Min Typ Max Units

Breakdown Voltage C to E IC = 50 mA, RBE = 27 Ω V
Breakdown Voltage C to E VBE = 0 V, IC = 50 mA V
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V

(BR)CER
(BR)CES

(BR)EBO

DC Current Gain VCE = 5 V, IC = 250 mA h

FE

55 — — Volts

55 — — Volts

4 5 — Volts

20 50 120 —

RF Specifications (100% Tested)

Characteristic Symbol Min Typ Max Units

Gain

(V

Collector Efficiency

(V

Load Mismatch Tolerance

(V
f = 2.0 GHz—all phase angles at frequency of test)

= 26 Vdc, P

CC

= 26 Vdc, P

CC

= 26 Vdc, P

CC

= 30 W, ICQ = 100 mA, f = 2.0 GHz) G

out

= 30 W, ICQ = 100 mA, f = 2.0 GHz) η

out

= 30 W(PEP), ICQ = 100 mA, Ψ — — 5:1 —

out

pe

C

7.0 8.5 — dB

38 46 — %

Typical Performance

Typical P

12

, Gain & Efficiency

OUT

vs. Frequenc

VCC= 26 V

11

I

= 100 mA

CQ

10

Gain

9

8

Gain (dB)

7

1750 1800 1850 1900 1950 2000 2050

Outp ut Power (W)

Frequency (MHz)

(at P-1dB)

Efficiency (%)

70

60

50

40

30

Output Power & Efficiency

20

10

9

8

7

Gain (dB)

6

5

1900 1925 1950 1975 2000

Broadband Test Fixture Performance

Gain (dB)

Efficiency (%)

VCC = 26 V
I

= 100 mA

CQ

P

= 30 W

OUT

Return L oss (dB )

Frequency (MHz)

- 5

-15

-25

-35

60

50

40

30

20

10

0

Efficiency (%

Return Loss (dB

2

/18/98