Ericsson PTB20162 Datasheet
e
Description
PTB 20162
40 Watts, 470–900 MHz
RF Power Transistor
The 20162 is an NPN common emitter RF power transistor intended
for 25 Vdc class AB operation from 470 to 900 MHz. Rated at 40
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability . 100% lot
traceability is standard.
Typical Output Pow er & Efficiency vs. Input Power
60
50
40
30
20
10
0
Output Power (Watts)
012345678
Input Power (Watts)
VCC = 25 V
I
= 200 mA
CQ
f = 900 MHz
70
60
50
40
30
20
10
Efficiency
Maximum Ratings
40 Watts, 470–900 MHz
Class AB Characteristics
50% Min Collector Efficiency at 40 Watts
Gold Metallization
Silicon Nitride Passivated
20162
LOT CODE
Package 20226
Parameter Symbol Value Unit
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T
Above 25°C derate by 0.45 W/°C
Storage Temperature Range T
Thermal Resistance (T
9/28/98
flange
= 25°C P
flange
= 70°C) R
1
CER
CBO
EBO
C
D
STG
θJC
50 Vdc
50 Vdc
4.0 Vdc
10.0 Adc
80 Watts
–40 to +150 °C
2.2 °C/W
PTB 20162
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Electrical Characteristics (100% T ested)
Characteristic Conditions Symbol Min T yp Max Units
Breakdown Voltage C to E IB = 0 A, IC = 50 mA, RBE = 22 Ω V
Breakdown Voltage C to E VBE = 0 V , IC = 50 mA V
Breakdown Voltage E to B IC = 0 A, IE = 20 mA V
DC Current Gain VCE = 5 V , IC = 1 A h
(BR)CER
(BR)CES
(BR)EBO
FE
50 — — V olts
50 — — V olts
4.0 5 — Volts
20 50 100 —
RF Specifications (100% T ested)
Characteristic Symbol Min T yp Max Units
Gain
(V
Collector Efficiency
(V
Power Output at 1 dB Compression
(V
Intermodulation Distortion
(V
f1 = 899 MHz, f2 = 900 MHz)
Load Mismatch T olerance
(V
f = 900 MHz—all phase angles at frequency of test)
= 25 Vdc, P
CC
= 25 Vdc, P
CC
= 25 Vdc, ICQ = 200 mA, f = 900 MHz) P-1dB 40 45 — Watts
CC
= 25 Vdc, P
CC
= 25 Vdc, P
CC
= 40 W, ICQ = 200 mA, f = 900 MHz) G
out
= 40 W, ICQ = 200 mA, f = 900 MHz) η
out
= 30 W(PEP), ICQ = 60 mA, IMD -32 -35 — dBc
out
= 40 W(CW), ICQ = 200 mA, Ψ — — 30:1 —
out
pe
C
8.0 9.5 — dB
50 — — %
Typical Performance
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Gain vs. Frequency
(as measured in a broadband circuit)
12
11
10
9
8
Gain (dB)
7
6
860 870 880 890 900
Frequency (MHz)
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
2
VCC = 25 V
I
= 200 mA
CQ
Pout = 30 W
Specifications subject to change without notice.
LF
© 1996 Ericsson Inc.
EUS/KR 1301-PTB 20162 Uen Rev. C 09-28-98
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