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Description
PTB 20155
9 Watts, 610–960 MHz
UHF Power Transistor
The 20155 is an NPN common base RF power transistor intended
for 28 Vdc class C operation from 610 to 960 MHz. Rated at 9 watts
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability . 100% lot
traceability is standard.
Typical Gain & Retur n Loss vs. Frequency
(as measured in a broadband circuit)
10
Gain (dB)
8
VCC = 28 V
6
4
Gain (dB)
2
Return L oss (dB)
0
700 750 800 850 900 950
Frequency (MHz)
Pin = 9 W
0
-5
-10
-15
-20
-25
Return Loss (dB)
Maximum Ratings
9 Watts, 610–960 MHz
Class C Characteristics
Gold Metallization
Silicon Nitride Passivated
20155
LOT CODE
Package 20209
Parameter Symbol Value Unit
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T
Above 25°C derate by 0.37 W/°C
Storage Temperature Range T
Thermal Resistance (T
9/28/98
flange
= 25°C P
flange
= 70°C) R
1
CER
CBO
EBO
C
D
STG
θJC
40 Vdc
50 Vdc
4 Vdc
6.7 Adc
65 Watts
–40 to +150 °C
2.7 °C/W
PTB 20155
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Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E VBE = 0 V, IC = 5 mA V
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V
DC Current Gain VCE = 5 V, IC = 300 mA h
Output Capacitance VCB = 28 V, IE = 0 A, f = 1 MHz C
Collector Cut-off Current VCB = 28 V, IE = 0 A I
(BR)CES
(BR)EBO
FE
ob
CBO
50 — — Volts
3.5 — — Volts
25 — 100 —
— 10.5 11 pF
— — 1.5 mA
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(V
Collector Efficiency
(V
= 28 Vdc, P
CC
= 28 Vdc, P
CC
= 9 W, f = 960 MHz) G
out
= 9 W, f = 960 MHz) η
out
pe
8.0 9.0 — dB
C
45 53 — %
Impedance Data (data shown for fixed-tuned broadband circuit)
(V
= 28 Vdc, P
CC
out
= 9 W)
Z Source Z Load
Frequency Z Source Z Load
MHz R jX R jX
850 4.4 -10.7 8.6 3.6
900 6.4 -10.0 9.3 4.9
960 6.4 -14.3 7.8 3.1
2