Ericsson PTB20151 Datasheet
e
PCN/PCS Power Transistor
Description
The 20151 is a class AB, NPN common emitter RF power transistor
intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts
minimum output power for PEP applications, it is specifically intended
for operation as a final or driver stage in CDMA or TDMA systems.
Ion implantation, nitride surface passivation and gold metallization
ensure excellent device reliability. 100% lot traceability is standard.
Typical Output Power vs. Input Power
70
PTB 20151
45 Watts, 1.8–2.0 GHz
45 Watts, 1.8–2.0 GHz
Class AB Characteristics
40% Collector Efficiency at 45 W
Gold Metallization
Silicon Nitride Passivated
60
50
40
30
20
10
Output Power (Watts)
0
0123456789
Input Power (Wa tts)
VCC = 26 V
I
= 100 mA
CQ
f = 2.0 GHz
20151
LOT CODE
Package 20223
Maximum Ratings
Parameter Symbol Value Unit
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T
Above 25°C derate by 1.2 W/°C
Storage Temperature Range T
= 25° C P
flange
CER
CBO
EBO
C
D
STG
50 Vdc
50 Vdc
4.0 Vdc
7.7 Adc
200 Watts
–40 to +150 °C
Thermal Resistance (T
9/28/98
= 70° C) R
flange
1
θJC
0.85 °C/W
PTB 20151
)
)
5
e
Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V(
Breakdown Voltage C to E IB = 0 A, IC = 100 mA, RBE = 22 Ω V(
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(
DC Current Gain VCE = 5 V, IC = 1 A h
BR)CES
BR)CER
BR)EBO
FE
50 — — Volts
50 — — Volts
4.0 5.0 — Volts
20 40 — —
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(V
Power Output at 1 dB Compression
(V
Collector Efficiency
(V
Load Mismatch Tolerance
(V
f = 2 GHz—all phase angles at frequency of test)
= 26 Vdc, P
CC
= 26 Vdc, P
CC
= 26 Vdc, P
CC
= 26 Vdc, P
CC
= 10 W, ICQ = 100 mA, f = 2 GHz) G
OUT
= 45 W, ICQ = 100 mA, f = 2 GHz) P-1dB 45.0 — — Watts
OUT
= 45 W, ICQ = 100 mA, f = 2 GHz) η
OUT
= 22.5 W, ICQ = 100 mA, Ψ — — 5:1 —
OUT
pe
C
8.0 9.5 — dB
40 47 — %
Typical Performance
P
, Gain & Efficiency
OUT
12
11
10
Gain
9
Gain (dB)
8
7
1750 1800 1850 1900 1950 2000 2050
Efficiency (%)
Frequency (MHz)
(at P-1dB)
Outp ut P ower (W)
VCC = 26 V
I
= 100 mA
CQ
vs. Frequency
70
60
50
40
30
20
Broadband Test Fixture Performance
10
Gain (dB)
8
6
4
Gain (dB)
2
Output Power & Efficiency
0
1900 1925 1950 1975 2000
VCC = 26 V
I
= 100 mA
CQ
P
= 45 W
OUT
Return L oss (d B )
Frequency (MHz)
Efficiency (%)
60
50
40
Efficiency (%
- 5
30
-15
20
-25
10
-35
0
Return Loss (dB
2
/4/98
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