Ericsson PTB20147 Datasheet
e
Description
PTB 20147
2.5 Watts, 1.8–2.0 GHz
Cellular Radio RF Power Transistor
The 20147 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability . 100% lot
traceability is standard.
Typical Output Pow er vs. Input Pow er
6
VCC = 26 V
5
I
= 40 mA
CQ
4
f = 2.0 GHz
3
2
1
Output Power (Watts)
0
0 0.1 0.2 0.3 0.4 0.5
Input Power (Wa tts)
2.5 Watts, 1.8–2.0 GHz
Class AB Characteristics
35% Collector Efficiency at 4 Watts
Tested to solderability standards:
- IEC-68-2-54
- ANSI/J Std-002-A
Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel
20147
LOT CODE
Package 20208
Maximum Ratings
Parameter Symbol Value Unit
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T
Above 25°C derate by 0.057 W/°C
Storage Temperature Range T
Thermal Resistance (T
9/28/98
flange
= 25°C P
flange
= 70°C) R
1
CER
CBO
EBO
C
D
STG
θJC
50 Vdc
50 Vdc
4.0 Vdc
1.0 Adc
10 Watts
–40 to +150 °C
17.5 °C/W
PTB 20147
e
Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E VBE = 0 V, IC = 10 mA V
Breakdown Voltage C to E IB = 0 A, IC = 10 mA, RBE = 22 Ω V
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V
DC Current Gain VCE = 5 V, IC = 250 mA h
(BR)CES
(BR)CER
(BR)EBO
FE
50 — — Volts
50 — — Volts
4 5 — Volts
20 40 — —
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(V
Power Output at 1 dB Compression
(V
Collector Efficiency
(V
Load Mismatch Tolerance
(V
f = 2.0 GHz—all phase angles at frequency of test)
= 26 Vdc, P
CC
= 26 Vdc, ICQ = 40 mA, f = 2.0 GHz) P-1dB 2.5 4 — Watts
CC
= 26 Vdc, P
CC
= 26 Vdc, P
CC
= 2.5 W, ICQ = 40 mA, f = 2.0 GHz) G
out
= 1.17 W, ICQ = 40 mA, f = 2.0 GHz) η
out
= 2.5 W, ICQ = 40 mA, Ψ — — 5:1 —
out
pe
C
810—dB
20 — — %
Impedance Data (data shown for fixed-tuned broadband circuit)
(V
= 26 Vdc, P
CC
= 2.5 W, ICQ = 40 mA)
out
Z Source Z Load
Frequency Z Source Z Load
GHz R jX R jX
1.8 30.0 -2.45 5.65 13.1
1.9 22.9 0.00 7.23 13.8
2.0 17.7 5.14 6.30 11.9
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
2
Z0 = 50 Ω
Specifications subject to change without notice.
LF
© Ericsson Components AB 1995
EUS/KR 1301-PTB 20147 Uen Rev. D 09-28-98
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