Ericsson PTB20141 Datasheet
e
Description
PTB 20141
18 Watts, 1.465–1.513 GHz
Cellular Radio RF Power Transistor
The 20141 is a class AB, NPN, common emitter RF power transistor
intended for 23 Vdc operation from 1.465 to 1.513 GHz. Rated at 18
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability . 100% lot
traceability is standard.
Typical Output Pow er vs. Input Pow er
30
VCC = 23 V
25
I
= 50 mA
CQ
f = 1.501 GHz
20
15
10
5
Output Power (Watts)
0
012345
Input Power (Wa tts)
Maximum Ratings
18 Watts, 1.465–1.513 GHz
Class AB Characteristics
45% Min Collector Efficiency at 9 Watts
Gold Metallization
Silicon Nitride Passivated
20141
LOT CODE
Package 20201
Parameter Symbol Value Unit
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T
Above 25°C derate by 0.29 W/°C
Storage Temperature Range T
Thermal Resistance (T
9/28/98
flange
= 25°C P
flange
= 70°C) R
1
CER
CBO
EBO
C
D
STG
θJC
50 Vdc
50 Vdc
4.0 Vdc
2.0 Adc
51.5 Watts
–40 to +150 °C
3.5 °C/W
PTB 20141
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Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E IB = 0 A, IC = 40 mA, RBE = 22 Ω V
Breakdown Voltage C to E VBE = 0 V, IC = 40 mA V
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V
DC Current Gain VCE = 5 V, IC = 1 A h
(BR)CER
(BR)CES
(BR)EBO
FE
50 — — Volts
50 — — Volts
4 5 — Volts
20 40 120 —
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(V
Collector Efficiency
(V
Intermodulation Distortion
(V
f1 = 1.500 GHz, f2 = 1.501 GHz)
Load Mismatch Tolerance
(V
f = 1.513 GHz—all phase angles at frequency of test)
= 23 Vdc, P
CC
= 23 Vdc, P
CC
= 23 Vdc, P
CC
= 23 Vdc, P
CC
= 9 W, ICQ = 50 mA, f = 1.513 GHz) G
out
= 9 W, ICQ = 50 mA, f = 1.513 GHz) η
out
= 9 W(PEP), ICQ = 50 mA, IMD — -29 — dBc
out
= 9 W, ICQ = 50 mA, Ψ — — 5:1 —
out
pe
C
8.5 — — dB
45 — — %
Impedance Data (data shown for fixed-tuned broadband circuit)
(V
= 23 Vdc, P
CC
= 9 W, ICQ = 50 mA)
out
Frequency Z Source Z Load
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Z Source Z Load
GHz R jX R jX
1.465 3.9 -5.6 3.1 -0.56
1.489 3.4 -4.5 3.0 -0.39
1.513 2.9 -3.4 2.9 -0.20
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
2
Specifications subject to change without notice.
LF
© Ericsson Components AB 1995
EUS/KR 1301-PTB 20141 Uen Rev. D 09-28-98
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