Ericsson PTB20135 Datasheet

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Description

PTB 20135

85 Watts, 925–960 MHz

Cellular Radio RF Power Transistor

The 20135 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 925 to 960 MHz. Rated at 85
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability . 100% lot
traceability is standard.

Typical Output Pow er vs. Input Pow er

100

80

60

40

VCC = 26 V

20

Output Power (Watts)

0

0 2 4 6 8 10 12 14 16 18

Input Power (Wa tts)

I

= 200 mA

CQ

f = 960 MHz

 26 Volt, 960 MHz Characteristics

- Output Power = 85 Watts

- Collector Efficiency = 50% at 85 Watts

- IMD = -30 dBc Max at 60 W(PEP)

 Class AB Characteristics
 Gold Metallization
 Silicon Nitride Passivated

20135

LOT CODE

Package 20216

Maximum Ratings

Parameter Symbol Value Unit

Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T

Above 25°C derate by 0.95 W/°C
Storage Temperature Range T

Thermal Resistance (T

9/28/98

flange

= 25°C P

flange

= 70°C) R

1

CER
CBO
EBO

C

D

STG

θJC

40 Vdc
65 Vdc

4.0 Vdc
20 Adc

165 Watts

–40 to +150 °C

1.06 °C/W

PTB 20135

5

e

Electrical Characteristics (100% Tested)

Characteristic Conditions Symbol Min Typ Max Units

Breakdown Voltage C to E IB = 0 A, IC = 100 mA V
Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V
DC Current Gain VCE = 5 V, IC = 1 A h

(BR)CEO
(BR)CES
(BR)EBO

FE

25 30 — Volts
55 70 — Volts

3.5 5 — Volts
20 50 100 —

RF Specifications (100% Tested)

Characteristic Symbol Min Typ Max Units

Gain

(V

Collector Efficiency

(V

Intermodulation Distortion

(V
f1 = 959.95 MHz, f2 = 960.00 MHz)

Load Mismatch Tolerance

(V
f = 960 MHz—all phase angles at frequency of test)

= 26 Vdc, P

CC

= 26 Vdc, P

CC

= 26 Vdc, P

CC

= 26 Vdc, P

CC

= 85 W, ICQ = 200 mA, f = 960 MHz) G

out

= 85 W, ICQ = 200 mA, f = 960 MHz) η

out

= 60 W(PEP), ICQ = 200 mA, IMD — -31 — dBc

out

= 60 W(PEP), ICQ = 200 mA, Ψ — — 10:1 —

out

pe

C

8.0 9.5 — dB

50 — — %

Impedance Data (data shown for fixed-tuned broadband circuit)

(V

CC

= 26 Vdc, P

= 85 W, ICQ = 200 mA)

out

Z Source Z Load

Frequency Z Source Z Load

MHz R jX R jX

925 3.0 -1.0 1.4 0.1
942 2.7 -0.7 1.4 -0.2
960 2.6 -0.4 1.4 0.2

2

/19/98