Ericsson PTB20134 Datasheet
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Description
PTB 20134
30 Watts, 860–900 MHz
Cellular Radio RF Power Transistor
The 20134 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 860 to 900 MHz. Rated at 30
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability . 100% lot
traceability is standard.
Typical Output Pow er vs. Input Pow er
50
VCC = 25 V
40
I
= 100 mA
CQ
f = 900 MHz
30
20
10
Output Power (Watts)
0
012345
Input Power (Watts)
Maximum Ratings
30 Watts, 860–900 MHz
Class AB Characteristics
50% Min Collector Efficiency at 30 Watts
Gold Metallization
Silicon Nitride Passivated
20134
LOT CODE
Package 20201
Parameter Symbol Value Unit
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T
Above 25°C derate by 0.45 W/°C
Storage Temperature Range T
Thermal Resistance (T
9/28/98
flange
= 25°C P
flange
= 70°C) R
1
CER
CBO
EBO
C
D
STG
θJC
40 Vdc
50 Vdc
4.0 Vdc
8.0 Adc
80 Watts
–40 to +150 °C
2.2 °C/W
PTB 20134
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Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E IB = 0 A, IC = 100 mA V
Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V
(BR)CEO
(BR)CES
(BR)EBO
DC Current Gain VCE = 5 V, IC = 1 A h
FE
25 30 — Volts
55 70 — Volts
3.5 5 — Volts
20 50 100 —
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(V
Collector Efficiency
(V
Intermodulation Distortion
(V
f = 900 MHz, ∆f = 1 MHz)
Load Mismatch Tolerance
(V
f = 900 MHz—all phase angles at frequency of test)
= 25 Vdc, P
CC
= 25 Vdc, P
CC
= 25 Vdc, P
CC
= 25 Vdc, P
CC
= 30 W, ICQ = 100 mA, f = 900 MHz) G
out
= 30 W, ICQ = 100 mA, f = 900 MHz) η
out
= 30 W(PEP), ICQ = 100 mA, IMD — -30 — dBc
out
= 30 W, ICQ = 100 mA, Ψ — — 30:1 —
out
pe
C
8 9.5 — dB
50 — — %
Typical Performance
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Gain & Efficiency vs. Frequency
(as measured in a broadband circuit)
13
12
11
10
Gain (dB)
9
Gain (dB)
8
7
850 860 870 880 890 900 910
Frequency (MHz)
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
2
Efficiency (%)
VCC = 25 V
I
= 100 mA
CQ
P
= 30 W
OUT
80
70
60
50
40
Efficiency (%)
30
20
Specifications subject to change without notice.
LF
© Ericsson Components AB 1995
EUS/KR 1301-PTB 20134 Uen Rev. D 09-28-98
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