Ericsson PTB20125 Datasheet
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Description
PTB 20125
100 Watts, 1.8–2.0 GHz
PCN/PCS Power Transistor
The 20125 is an NPN, push-pull RF power transistor intended for 26
Vdc class AB operation from 1.8 to 2.0 GHz. Rated at 100 watts PEP
minimum output power, it is specifically intended for operation as a
final stage in CDMA or TDMA systems. Ion implantation, nitride surface
passivation and gold metallization ensure excellent device reliability .
100% lot traceability is standard.
Typical P
12
11
10
VCC = 26 V
9
I
CQ
8
Gain (dB)
7
6
5
1750 1800 1850 1900 1950 2000 2050
, Gain & Efficiency
OUT
vs. Frequenc
= 200 mA
Gain (dB)
Frequency (MHz)
Outp ut P ower (W)
(at P-1dB)
Efficiency (%)
140
120
100
80
60
40
Output Power & Efficiency
20
100 Watts, 1.8–2.0 GHz
Class AB Characteristics
40% Collector Efficiency at 100 Watts
Gold Metallization
Silicon Nitride Passivated
20125
LOT CODE
Package 20225 *
Maximum Ratings
Parameter Symbol Value Unit
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T
Above 25°C derate by 2.3 W/°C
Storage Temperature Range T
Thermal Resistance (T
* This product not recommended or specified for CW or class A operation. Recommend two PTB 20175 for these applications.
/19/98
flange
= 25°C P
flange
= 70°C) R
1
CER
CBO
EBO
C
D
STG
θJC
55 Vdc
55 Vdc
4.0 Vdc
14 Adc
400 Watts
–40 to +150 °C
0.44 °C/W
PTB 20125
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Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V
Breakdown Voltage E to B IC = 0 A, IE = 20 mA V
DC Current Gain VCE = 10 V, IC = 1.5 A h
(BR)CES
(BR)EBO
FE
55 — — Volts
4.0 5.0 — Volts
30 50 120 —
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(V
= 26 Vdc, P
CC
Collector Efficiency
(V
= 26 Vdc, P
CC
Load Mismatch Tolerance
(V
= 26 Vdc, P
CC
—at all phase angles)
= 40 W(PEP), ICQ = 2 x 100 mA, f = 2 GHz) G
out
= 100 W, ICQ = 2 x 100 mA, f = 2 GHz) η
out
= 100 W(PEP), ICQ = 2 x 100 mA, f = 2 GHz Ψ — — 5:1 —
out
pe
C
7.0 8.0 — dB
40 45 — %
Typical Performance
Broadband Test Fixture Performance
10
Gain (dB)
8
6
4
Gain (dB)
2
0
1900 1925 1950 1975 2000
VCC = 26 V
I
= 200 mA
CQ
Pout = 50 W
Frequency (MHz)
Efficiency (%)
Return L oss (d B )
60
50
40
Efficiency (%
30
- 5
20
-15
-25
10
-35
0
Return Loss (dB
Output Power vs. Supply Voltage
140
130
120
110
100
90
Output Power (Watts)
80
70
22 23 24 25 26 27
Supply Voltage (Volts)
ICQ = 200 mA
f = 2000 MHz
2
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