Ericsson PTB20111 Datasheet
e
Description
PTB 20111
85 Watts, 860–900 MHz
Cellular Radio RF Power Transistor
The 20111 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 860 to 900 MHz. Rated at 85
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability . 100% lot
traceability is standard.
Typical Output Pow er vs. Input Pow er
100
80
60
40
VCC = 25 V
20
Output Power (Watts)
0
0481216
Input Power (Wa tts)
I
= 200 mA
CQ
f = 900 MHz
25 Volt, 860–900 MHz Characteristics
- Output Power = 85 Watts
- Collector Efficiency = 50% at 85 Watts
- IMD = -30 dBc Max at 60 W(PEP)
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
20111
LOT CODE
Package 20216
Maximum Ratings
Parameter Symbol Value Unit
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T
Above 25°C derate by 0.91 W/°C
Storage Temperature Range T
Thermal Resistance (T
9/28/98
flange
= 25°C P
flange
= 70°C) R
1
CER
CBO
EBO
C
D
STG
θJC
40 Vdc
65 Vdc
4.0 Vdc
20 Adc
159 Watts
–40 to +150 °C
1.1 °C/W
PTB 20111
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Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E IB = 0 A, IC = 100 mA V
Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V
DC Current Gain VCE = 5 V, IC = 1 A h
(BR)CEO
(BR)CES
(BR)EBO
FE
25 30 — Volts
55 70 — Volts
3.5 5 — Volts
20 50 100 —
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(V
Collector Efficiency
(V
Load Mismatch Tolerance
(V
f = 900 MHz—all phase angles at frequency of test)
= 25 Vdc, P
CC
= 25 Vdc, P
CC
= 25 Vdc, P
CC
= 85 W, ICQ = 200 mA, f = 900 MHz) G
out
= 85 W, ICQ = 200 mA, f = 900 MHz) η
out
= 60 W(PEP), ICQ = 200 mA, Ψ — — 10:1 —
out
pe
C
8.5 9.5 — dB
50 — — %
Impedance Data (data shown for fixed-tuned broadband circuit)
(V
= 25 Vdc, P
CC
= 85 W, ICQ = 200 mA)
out
Z Source Z Load
Frequency Z Source Z Load
MHz R jX R jX
860 1.7 -0.8 1.7 -1.6
880 2.0 -1.2 1.8 -1.9
900 1.7 -0.8 1.7 -1.6
2
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