e
Description
PTB 20101
175 Watts P-Sync, 470–860 MHz
UHF TV Power Transistor
The 20101 is a class AB, NPN, common emitter UHF TV power
transistor intended for 28 Vdc operation from 470 to 860 MHz. It is
rated at 175 watts P-sync minimum output power. Ion implantation,
nitride surface passivation and gold metallization are used to ensure
excellent device reliability. 100% lot traceability is standard.
Typical Gain vs. Frequency
(as measured in a broadband circuit)
13
12
11
10
Gain (dB)
9
8
400 500 600 700 800 900
Frequency (MHz)
VCC = 28 V
I
= 2 x 200 mA
CQ
Pout = 110 W
28 Volt, 860 MHz Characteristics
- Output Power = 175 Watts P-Sync
- Output Power = 110 (CW)
- Gain = 10.0 dB Min
55% Collector Efficiency at 110 Watts
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
20101
LOT CODE
Package 20224
Maximum Ratings
Parameter Symbol Value Unit
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T
Above 25°C derate by 1.89 W/°C
Storage Temperature Range T
Thermal Resistance (T
9/28/98
flange
= 25°C P
flange
= 70°C) R
1
CER
CBO
EBO
C
D
STG
θJC
40 Vdc
65 Vdc
4.0 Vdc
20 Adc
330 Watts
–40 to +150 °C
0.53 °C/W
PTB 20101
e
Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E IB = 0 A, IC = 100 mA V
Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V
DC Current Gain VCE = 5 V, IC = 1 A h
Output Capacitance (per side) VCB = 28 V, IE = 0 A, f = 1 MHz C
(BR)CEO
(BR)CES
(BR)EBO
FE
ob
25 30 — Volts
55 70 — Volts
3.5 5 — Volts
20 50 100 —
—85—pF
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Output Power (P-Sync)
(V
Gain
(V
f = 860 MHz)
Collector Efficiency
(V
f = 860 MHz)
Load Mismatch Tolerance
(V
f = 860 MHz—all phase angles at frequency of test)
= 28 Vdc, ICQ = 200 mA per side, f = 860 MHz) Pout 175 — — Watts
CC
= 28 Vdc, P
CC
= 28 Vdc, P
CC
= 28 Vdc, P
CC
= 110 W, ICQ = 200 mA per side, G
out
= 110 W, ICQ = 200 mA per side, η
out
= 175 W, ICQ = 200 mA per side, Ψ — — 5:1 —
out
pe
C
10.0 11 — dB
55 58 — %
Impedance Data (data shown for fixed-tuned broadband circuit)
(VCC = 28 Vdc, P
= 110 W, ICQ = 200 mA per side)
out
Z Sourc
Frequency Z Source Z Load
MHz R jX R jX
450 0.4 -1.0 2.0 0.3
550 0.5 -1.3 1.6 0.0
650 0.7 -1.8 1.3 0.0
750 1.8 -2.0 1.0 -0.8
850 2.7 -0.5 0.9 -1.2
Z Load
2
9/28/98