Ericsson PTB20101 Datasheet

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Description
PTB 20101
175 Watts P-Sync, 470–860 MHz
UHF TV Power Transistor
The 20101 is a class AB, NPN, common emitter UHF TV power transistor intended for 28 Vdc operation from 470 to 860 MHz. It is rated at 175 watts P-sync minimum output power. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.
Typical Gain vs. Frequency
(as measured in a broadband circuit)
13
12
11
10
9
8
400 500 600 700 800 900
Frequency (MHz)
VCC = 28 V I
= 2 x 200 mA
CQ
Pout = 110 W
28 Volt, 860 MHz Characteristics
- Output Power = 175 Watts P-Sync
- Output Power = 110 (CW)
- Gain = 10.0 dB Min
55% Collector Efficiency at 110 WattsClass AB CharacteristicsGold MetallizationSilicon Nitride Passivated
20101
LOT CODE
Package 20224
Maximum Ratings
Parameter Symbol Value Unit
Collector-Emitter Voltage V Collector-Base Voltage V Emitter-Base Voltage (collector open) V Collector Current (continuous) I Total Device Dissipation at T
Above 25°C derate by 1.89 W/°C Storage Temperature Range T
Thermal Resistance (T
9/28/98
flange
= 25°C P
flange
= 70°C) R
1
CER CBO EBO
C
D
STG
θJC
40 Vdc 65 Vdc
4.0 Vdc 20 Adc
330 Watts
–40 to +150 °C
0.53 °C/W
PTB 20101
e
e
Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E IB = 0 A, IC = 100 mA V Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V Breakdown Voltage E to B IC = 0 A, IE = 5 mA V DC Current Gain VCE = 5 V, IC = 1 A h Output Capacitance (per side) VCB = 28 V, IE = 0 A, f = 1 MHz C
(BR)CEO (BR)CES (BR)EBO
FE
ob
25 30 Volts 55 70 Volts
3.5 5 Volts 20 50 100 — —85—pF
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Output Power (P-Sync)
(V
Gain
(V f = 860 MHz)
Collector Efficiency
(V f = 860 MHz)
Load Mismatch Tolerance
(V f = 860 MHz—all phase angles at frequency of test)
= 28 Vdc, ICQ = 200 mA per side, f = 860 MHz) Pout 175 Watts
CC
= 28 Vdc, P
CC
= 28 Vdc, P
CC
= 28 Vdc, P
CC
= 110 W, ICQ = 200 mA per side, G
out
= 110 W, ICQ = 200 mA per side, η
out
= 175 W, ICQ = 200 mA per side, Ψ 5:1
out
pe
C
10.0 11 dB
55 58 %
Impedance Data (data shown for fixed-tuned broadband circuit)
(VCC = 28 Vdc, P
= 110 W, ICQ = 200 mA per side)
out
Z Sourc
Frequency Z Source Z Load
MHz R jX R jX
450 0.4 -1.0 2.0 0.3 550 0.5 -1.3 1.6 0.0 650 0.7 -1.8 1.3 0.0 750 1.8 -2.0 1.0 -0.8 850 2.7 -0.5 0.9 -1.2
Z Load
2
9/28/98
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