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Description
PTB 20091
30 Watts, 470–860 MHz
UHF TV Linear Power Transistor
The 20091 is an NPN, common emitter RF power transistor intended
for 25 Vdc class A operation from 470 to 860 MHz. It is rated at 30
watts P-sync output power. Ion implantation, nitride surface passivation
and gold metallization are used to ensure excellent device reliability.
100% lot traceability is standard.
Typical Gain vs. Frequency
(as measured in a broadband circuit)
15
13
11
Gain (dB)
9
7
400 500 600 700 800 900
Frequency (MHz)
VCC = 25 V
I
= 4.5 A Tota l
C
Pout = 30 W(P-Sync)
Maximum Ratings
30 Watts (P-Sync), 470–860 MHz
Class A Characteristics
Silicon Nitride Passivated
Gold Metallization
Excellent Linearity
20091
LOT CODE
Package 20212
Parameter Symbol Value Unit
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T
Above 25°C derate by 1.33 W/°C
Storage Temperature Range T
Thermal Resistance (T
9/28/98
flange
= 25°C P
flange
= 70°C) R
1
CEO
CBO
EBO
C
D
STG
θJC
30 Vdc
65 Vdc
4.0 Vdc
6.7 Adc
150 Watts
–40 to +150 °C
.75 °C/W
PTB 20091
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Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E IB = 0 A, IC = 100 mA V(
Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V(
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(
DC Current Gain VCE = 5 V, IC = 1 A h
Output Capacitance (per side) VCB = 28 V, IE = 0 A, f = 1 MHz Cob — 45 — pF
BR)CEO
BR)CES
BR)EBO
FE
25 30 — Volts
55 70 — Volts
3.5 5 — Volts
20 50 100 —
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(V
f = 470–860 MHz)
Intermodulation Distortion
(V
f1 = 860 MHz, Vision = -8dB, f2 = 863.5 MHz, Subcarrier = -16dB,
f3 = 864.5 MHz, Sound = -7dB)
Load Mismatch Tolerance
(V
f = 470–860 MHz—all phase angles at frequency of test)
= 25 Vdc, P
CC
= 25 Vdc, P
CC
= 25 Vdc, P
CC
= 30 W(P-sync), IC = 4.5 A Total, G
out
= 27.5 W(P-sync), IC = 4.5 A Total, IM
out
out
= 30 W
(P-sync)
, IC = 4.5 A Total, Ψ — — 10:1 —
pe
11 12 — dB
3
— -50 — dBc
Impedance Data (data shown for fixed-tuned broadband circuit)
(V
= 25 Vdc, P
CC
Frequency Z Source Z Load
MHz R jX R jX
470 2.0 -3.6 9.8 -9.8
650 3.6 -7.0 9.0 -1.3
860 6.0 -13.5 4.5 -5.0
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
out
= 30 W
(P-sync)
, IC = 4.5 A Total)
Z Source Z Load
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
2
Z0 = 50 Ω
Specifications subject to change without notice.
LF
© 1996 Ericsson Inc.
EUS/KR 1301-PTB 20091 Uen Rev. D 09-28-98