Ericsson PTB20082 Datasheet
e
Description
PTB 20082
15 Watts, 1.8–2.0 GHz
Cellular Radio RF Power Transistor
The 20082 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 watts
output power, it may be used for both CW and PEP applications. Ion
implantation, nitride surface passivation and gold metallization ensure
excellent device reliability. 100% lot traceability is standard.
Typical Output Power vs. Input Power
20
16
12
8
4
Output Power (Watts)
0
01234
Input Power (Wa tts)
V
= 26 V
CC
I
= 70 mA
CQ
f = 2.0 GHz
10 Watts Linear Power
Output Power at 1 dB Compressed = 15 W
Class AB Characteristics
30% Collector Efficiency at 7.5 Watts
Gold Metallization
Silicon Nitride Passivated
20082
LOT CODE
Package 20209
Maximum Ratings
Parameter Symbol Value Unit
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T
Above 25°C derate by 0.29 W/°C
Storage Temperature Range T
Thermal Resistance (T
9/28/98
flange
= 25°C P
flange
= 70°C) R
1
CER
CBO
EBO
C
D
STG
θJC
50 Vdc
50 Vdc
4.0 Vdc
1.4 Adc
52 Watts
–40 to +150 °C
3.4 °C/W
PTB 20082
s
5
e
Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E IB = 0 A, IC = 5 mA, RBE = 22 Ω V
Breakdown Voltage C to E VBE = 0 V, IC = 5 mA V
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V
(BR)CER
(BR)CES
(BR)EBO
DC Current Gain VCE = 5 V, IC = 250 mA h
FE
50 — — Volts
50 — — Volts
4 5 — Volts
20 — — —
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(V
Output Power at 1 dB Compression
(V
Collector Efficiency
(V
Load Mismatch Tolerance
(V
f = 2.0 GHz—all phase angles at frequency of test)
= 26 Vdc, P
CC
= 26 Vdc, ICQ = 70 mA, f = 2.0 GHz) P-1dB 15 — — Watts
CC
= 26 Vdc, P
CC
= 26 Vdc, P
CC
= 7.5 W, ICQ = 70 mA, f = 2.0 GHz) G
OUT
= 7.5 W, ICQ = 70 mA, f = 2.0 GHz) η
OUT
= 7.5 W, ICQ = 70 mA, Ψ — — 5:1 —
OUT
pe
C
89—dB
30 — — %
Typical Performance
P
, Gain & Efficiency
OUT
10
9
8
Gain
7
6
5
1750 1800 1850 1900 1950 2000 2050
Gain (dB)
VCC = 26 V
I
= 70 mA
CQ
(at P-1dB)
Efficiency (%)
Outp ut P ower (W)
vs. Frequency
Frequency (MHz)
60
50
40
30
20
Output Power & Efficiency
10
20
16
12
Gain
8
4
1900 1925 1950 1975 2000
Broadband Test Fixture Performance
VCC = 26 V
I
= 70 mA
CQ
P
= 7.5 W
OUT
Gain (dB)
Efficiency (%)
Return L oss (d B )
Frequency (MHz)
-15
-25
-35
60
50
40
30
20
10
0
Efficiency
Return Los
2
/11/98
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