Ericsson PTB20081 Datasheet

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Description

PTB 20081

150 Watts, 470–860 MHz

UHF TV Power Transistor

The 20081 is a class AB, NPN, common emitter RF power transistor
intended for 28 to 32 Vdc operation across the 470 to 860 MHz UHF
TV frequency band. It is rated at 100 watts minimum output power.
Ion implantation, nitride surface passivation and gold metallization
are used to ensure excellent device reliability. 100% lot traceability is
standard.

Typical Gain vs. Frequency

(as measured in a broadband circuit)

10.0

9.5

9.0

8.5

8.0

Gain (dB)

7.5

7.0
470 548 626 704 782 860

Frequency (MHz)

VCC = 28 V
I

= 2 x 100 mA

CQ

Pout = 100 W

 150 Watts (P-Sync), 470–860 MHz
 Class AB Characteristics
 55% Collector Efficiency at 100 Watts (CW)
 Guaranteed Performance at 28 Volts, 860 MHz

- Output Power = 125 Watts (Peak Sync)

- Output Power = 100 Watts (CW)

- Minimum Gain = 8.5 dB

 Guaranteed Performance at 32 Volts, 860 MHz

- Output Power = 150 Watts (Peak Sync)

20081

LOT CODE

Package 20212

Maximum Ratings

Parameter Symbol Value Unit

Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T

Above 25°C derate by 1.33 W/°C
Storage Temperature Range T

Thermal Resistance (T

9/28/98

flange

= 25°C P

flange

= 70°C) R

1

CER
CBO
EBO

C

D

STG

θJC

40 Vdc
65 Vdc

4.0 Vdc
12 Adc

233 Watts

–40 to +150 °C

0.75 °C/W

PTB 20081

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Electrical Characteristics (100% Tested)

Characteristic Conditions Symbol Min Typ Max Units

Breakdown Voltage C to E IB = 0 A, IC = 100 mA V(
Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V(
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(
DC Current Gain VCE = 5 V, IC = 1 A h
Output Capacitance VCB = 28 V, IE = 0 A, f = 1 MHz Cob — 45 — pF

(each side)

BR)CEO
BR)CES
BR)EBO

FE

25 30 — Volts
55 70 — Volts

3.5 5 — Volts
20 50 100 —

RF Specifications (100% Tested)

Characteristic Symbol Min Typ Max Units

Power Output

(V

Power Output (P-Sync.)

(V

Power Out (P-Sync.)

(V

Gain

(V

Collector Efficiency

(V

Load Mismatch Tolerance

(V
all phase angles at frequency of test)

= 28 Vdc, ICQ = 2 x 100 mA, f = 860 MHz) P

CC

= 28 Vdc, ICQ = 2 x 100 mA, f = 860 MHz) P

CC

= 32 Vdc, ICQ = 2 x 100 mA, f = 860 MHz) P

CC

= 28 Vdc, P

CC

= 28 Vdc, P

CC

= 28 Vdc, P

CC

= 100 W, ICQ = 2 x 100 mA, f = 860 MHz) G

out

= 100 W, ICQ = 2 x 100 mA, f = 860 MHz) η

out

= 100 W

out

, f = 860 MHz— Ψ — — 10:1 —

(PEP)

out

out

out

pe

C

100 110 — Watts

125 135 — Watts

150 160 — Watts

8.5 9.5 — dB

55 58 — %

Impedance Data (data shown for fixed-tuned broadband circuit)

(V

= 28 Vdc, P

CC

Frequency Z Source Z Load

MHz R jX R jX

470 2.0 -3.6 9.8 -9.8
650 3.6 -7.0 9.0 -1.3
860 6.0 -13.5 4.5 -5.0

= 100 W, ICQ = 2 x 100 mA)

out

Z Source Z Load

2

Z0 = 50 Ω