Ericsson PTB20080 Datasheet

e

Description

PTB 20080

25 Watts, 1.6–1.7 GHz

RF Power Transistor

ThPTB 20080 is a class A/AB, NPN, silicon bipolar junction, internally­matched RF power transistor intended for 26 Vdc operation from 1.6
to 1.7 GHz. It is rated at 25 Watts minimum output power for PEP
applications. Ion implantation, nitride surface passivation and gold
metallization ensure excellent device reliability. 100% lot traceability
is standard.

Typical Output Pow er & Efficiency vs. Input Power

40

30

20

VCC = 26 V

10

Output Power (Watts)

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Input Power (Wa tts)

I

= 125 mA

CQ

f = 1.65 GHz

80

60

40

20

Efficiency (%)

0

Maximum Ratings

 25 Watts, 1.6–1.7 GHz
 Class AB Characteristics
 40% Collector Efficiency at 25 Watts
 Gold Metallization
 Silicon Nitride Passivated

20080

EXXX

Package 20209

Parameter Symbol Value Unit

Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T

Above 25° C derate by 0.7 W/°C
Storage Temperature Range T

Thermal Resistance (T

9/28/98

flange

= 25° C P

flange

= 70°C) R

1

CER
CBO
EBO

C

D

STG

θJC

50 Vdc
50 Vdc

4.0 Vdc

3.4 Adc

123 Watts

150 °C

1.43 °C/W

PTB 20080

5

e

Electrical Characteristics (100% Tested)

Characteristic Conditions Symbol Min Typ Max Units

Breakdown Voltage C to B VBE = 0 V, IC = 15 mA V
Breakdown Voltage E to B IC = 5 mA V
Cut-off Current C to E VCE = 26 V I
DC Current Gain VCE = 5 V, IC = 2 A h

(BR)CES
(BR)EBO

CES

FE

50 — — Vdc

4.0 — — Vdc
——10mA
30 — — —

RF Specifications (100% Tested)

Characteristic Symbol Min Typ Max Units

Power Gain

(V

= 26 Vdc, P

CC

Power Output at 1 dB Compression

(V

Collector Efficiency

(V

Load Mismatch Tolerance

(V
f = 1.65 GHz—all phase angles at frequency of test)

= 26 Vdc, ICQ = 125 mA, f = 1.65 GHz) P-1dB 25 — — Watts

CC

= 26 Vdc, P

CC

= 26 Vdc, P

CC

= 10 W, ICQ = 125 mA, f = 1.65 GHz) G

OUT

= 25 W, ICQ = 125 mA, f = 1.65 GHz) η

OUT

= 25 W, ICQ = 125 mA, Ψ — — 10:1 —

OUT

pe

C

10.5 11.5 — dB

40 44 — %

Impedance Data (data shown for fixed-tuned broadband circuit)
V

= 26 Vdc, P

CC

= 25 W, ICQ = 125 mA

OUT

Z Source Z Load

Frequency Z Source Z Load

GHz R jX R jX

1.60 5.6 -4.1 2.6 -1.0

1.65 5.6 -4.0 2.6 -0.6

1.70 5.6 -4.0 2.7 -0.2

Z0 = 50 Ω

2

/6/98