e
Description
PTB 20077
0.7 Watts, 1525–1660 MHz
INMARSAT RF Power Transistor
The 20077 is a class A, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1525 to 1660 MHz. Rated at 0.7
watt minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization ensure excellent device reliability. 100% lot traceability
is standard.
Typical Output Pow er vs. Input Power
1.2
1.0
0.8
0.6
0.4
0.2
Output Power (Watts)
0.0
0.00 0.02 0.04 0.06 0.08 0.10
Input Power (Watts)
VCC = 26 V
I
= 120 mA
CQ
f = 1.66 GHz
• 0.7 Watt, 1525–1660 MHz
• Class A Characteristics
• Gold Metallization
• Silicon Nitride Passivated
• Surface Mountable
• Available in Tape and Reel
20077
LOT CODE
Package 20227
Maximum Ratings
Parameter Symbol Value Unit
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T
Above 25°C derate by 0.031 W/°C
Storage Temperature Range T
Thermal Resistance (T
9/28/98
flange
= 25°C P
flange
= 70°C) R
1
CER
CBO
EBO
C
D
STG
θJC
60 Vdc
60 Vdc
4.0 Vdc
0.5 Adc
5.4 Watts
–40 to +150 °C
32.3 °C/W
PTB 20077
e
Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E VBE = 0 V, IC = 5 mA V(
Breakdown Voltage C to E IB = 0 A, IC = 10 mA, RBE = 22 Ω V(
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(
DC Current Gain VCE = 5 V, IC = 250 mA h
BR)CES
BR)CER
BR)EBO
FE
60 — — Volts
60 — — Volts
4.0 5 — Volts
20 40 — —
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(V
f = 1.525; 1.66 GHz)
Power Output at 1 dB Compression
(V
f = 1.525; 1.66 GHz)
Load Mismatch Tolerance
(V
f = 1.66 GHz—all phase angles at frequency of test)
= 25 Vdc, P
CC
= 25 Vdc, ICQ = 120 mA, P-1dB 0.7 0.9 — Watts
CC
= 25 Vdc, P
CC
= 0.2 W, ICQ = 120 mA, G
out
= 0.7 W, ICQ = 120 mA, Ψ — — 5:1 —
out
pe
10 12 — dB
Typical Performance
Typical P
14
12
10
8
VCC = 26 V
6
I
4
Outp ut Power (W)
2
0
1300 1350 1400 1450 1500 1550 1600 1650 1700
Gain (dB) & Output Power (Watt
, Gain & Efficiency
OUT
vs. Frequenc
Gain (dB)
= 120 mA
CQ
Frequency (MHz)
(at P-1dB)
Efficiency (%)
40
35
30
25
20
15
Efficiency (%)
10
5
Inter modulation Distortion vs. Output Pow er
-10
VCC = 26 V
-20
I
= 120 mA
CQ
f
= 1559.9 MHz
1
-30
f
= 1666.0 MHz
2
-40
IMD (dBc)
-50
-60
-70
IM3
IM5
IM7
0.0 0.2 0.4 0.6 0.8 1.0
Output Power (Watts-PEP)
2
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