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Description
PTB 20074
14 watts, 1.477–1.501 GHz
Cellular Radio RF Power Transistor
The 20074 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.477 to 1.501 GHz. Rated at 14
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability . 100% lot
traceability is standard.
Typical Output Pow er vs. Input Pow er
20
15
10
VCC = 26 V
I
5
Output Power (Watts)
0
01234
Input Power (Wa tts)
= 50 mA
CQ
f = 1.501 GHz
Maximum Ratings
14 watts, 1.477–1.501 GHz
Class AB Characteristics
30% Collector Efficiency at 10 watts
Gold Metallization
Silicon Nitride Passivated
20074
LOT CODE
Package 20201
Parameter Symbol Value Unit
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T
Above 25°C derate by 0.14 W/°C
Storage Temperature Range T
Thermal Resistance (T
9/28/98
flange
= 25°C P
flange
= 70°C) R
1
CER
CBO
EBO
C
D
STG
θJC
50 Vdc
50 Vdc
4.0 Vdc
1.4 Adc
25 Watts
–40 to +150 °C
7.0 °C/W
PTB 20074
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Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E IB = 0 A, IC = 40 mA, RBE = 22 Ω V
Breakdown Voltage C to E VBE = 0 V, IC = 40 mA V
Breakdown Voltage E to B IC = 0 A, IE = 20 mA V
DC Current Gain VCE = 10 V, IC = 0.25 A h
(BR)CER
(BR)CES
(BR)EBO
FE
50 — — Volts
50 — — Volts
4 5 — Volts
20 50 120 —
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(V
Power Output at 1 dB Compression
(V
Collector Efficiency
(V
Intermodulation Distortion
(V
f1 = 1.500 GHz, f2 = 1.501 GHz)
Load Mismatch Tolerance
(V
f = 1.501 GHz—all phase angles at frequency of test)
= 26 Vdc, P
CC
= 26 Vdc, ICQ = 50 mA, f = 1.501 GHz) P-1dB 13 15 — Watts
CC
= 26 Vdc, P
CC
= 26 Vdc, P
CC
= 26 Vdc, P
CC
= 10 W, ICQ = 50 mA, f = 1.501 GHz) G
out
= 10 W, ICQ = 50 mA, f = 1.501 GHz) η
out
= 10 W(PEP), ICQ = 50 mA, IMD — -30 — dBc
out
= 10 W, ICQ = 50 mA, Ψ — — 5:1 —
out
pe
C
78—dB
30 — — %
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
2
Specifications subject to change without notice.
LF
© Ericsson Components AB 1995
EUS/KR 1301-PTB 20074 Uen Rev. C 09-28-98