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Description
PTB 20051
6 Watts, 1.465–1.513 GHz
Cellular Radio RF Power Transistor
The 20051 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.465 to 1.513 GHz. Rated at 6
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability . 100% lot
traceability is standard.
Typical Output Pow er vs. Input Pow er
9.0
7.5
6.0
4.5
3.0
1.5
Output Power (Watts)
0.0
0 0.5 1 1.5 2
Input Power (Watts)
VCC = 26 V
I
= 40 mA
CQ
f = 1.501 GHz
Maximum Ratings
6 Watts, 1.465–1.513 GHz
Class AB Characteristics
35% Collector Efficiency at 4 Watts
Gold Metallization
Silicon Nitride Passivated
20051
LOT CODE
Package 20201
Parameter Symbol Value Unit
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T
Above 25°C derate by 0.16 W/°C
Storage Temperature Range T
Thermal Resistance (T
9/28/98
flange
= 25°C P
flange
= 70°C) R
1
CER
CBO
EBO
C
D
STG
θJC
50 Vdc
50 Vdc
4.0 Vdc
0.7 Adc
28 Watts
–40 to +150 °C
6.2 °C/W
PTB 20051
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Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E IB = 0 A, IC = 10 mA, RBE = 22 Ω V
Breakdown Voltage C to E VBE = 0 V, IC = 10 mA V
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V
DC Current Gain VCE = 10 V, IC = 0.7 A h
(BR)CER
(BR)CES
(BR)EBO
FE
50 — — Volts
50 — — Volts
4 5 — Volts
20 50 120 —
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(V
Power Output at 1 dB Compression
(V
Collector Efficiency
(V
Load Mismatch Tolerance
(V
f = 1.501 GHz—all phase angles at frequency of test)
= 26 Vdc, P
CC
= 26 Vdc, ICQ = 40 mA, f = 1.501 GHz) P-1dB 6.5 — — Watts
CC
= 26 Vdc, P
CC
= 26 Vdc, P
CC
= 4 W, ICQ = 40 mA, f = 1.501 GHz) G
out
= 4 W, ICQ = 40 mA, f = 1.501 GHz) η
out
= 4 W, ICQ = 40 mA, Ψ — — 5:1 —
out
pe
C
8.0 — — dB
35 — — %
Impedance Data (data shown for fixed-tuned broadband circuit)
(V
= 26 Vdc, P
CC
= 4 W, ICQ = 40 mA)
out
Frequency Z Source Z Load
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Z Source Z Load
GHz R jX R jX
1.465 10.7 11.2 11.9 21.0
1.489 9.4 11.8 10.2 20.3
1.513 8.1 12.8 9.7 18.3
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
2
Specifications subject to change without notice.
LF
© Ericsson Components AB 1994
EUS/KR 1301-PTB 20051 Uen Rev. D 09-28-98