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Description
PTB 20046
1 Watt, 1465–1513 MHz
Cellular Radio RF Power Transistor
The 20046 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1465 to 1501 MHz. Rated at 1
watt minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability . 100% lot
traceability is standard.
20046
LOT CODE
Package 20201
Maximum Ratings
1 Watt, 1465–1513 MHz
Class AB Characteristics
18% Collector Efficiency at 1 Watt
Gold Metallization
Silicon Nitride Passivated
Parameter Symbol Value Unit
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T
Above 25°C derate by 0.057 W/°C
Storage Temperature T
Thermal Resistance (T
9/28/98
flange
= 25°C P
flange
= 70°C) R
1
CER
CBO
EBO
C
D
stg
θJC
50 Vdc
50 Vdc
4.0 Vdc
0.7 Adc
10 Watts
150 °C
17.5 °C/W
PTB 20046
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Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E IB = 0 A, IC = 10 mA, RBE = 22 Ω V
Breakdown Voltage C to E VBE = 0 V, IC = 10 mA V
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V
DC Current Gain VCE = 5 V, IC = 1 A h
(BR)CER
(BR)CES
(BR)EBO
FE
50 — — Volts
50 — — Volts
4 5 — Volts
20 50 120 —
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(V
Power Output at 1 dB Compression
(V
Collector Efficiency
(V
Intermodulation Distortion
(V
f1 = 1500 MHz, f2 = 1501 MHz)
Load Mismatch Tolerance
(V
f = 1501 MHz—all phase angles at frequency of test)
= 26 Vdc, P
CC
= 26 Vdc, ICQ = 40 mA, f = 1501 MHz) P-1dB 2.5 — — Watts
CC
= 26 Vdc, P
CC
= 26 Vdc, P
CC
= 26 Vdc, P
CC
= 1 W, ICQ = 40 mA, f = 1501 MHz) G
out
= 1 W, ICQ = 40 mA, f = 1501 MHz) η
out
= 1 W(PEP), ICQ = 40 mA, IMD — -23 — dBc
out
= 1 W, ICQ = 40 mA, Ψ — — 5:1 —
out
pe
C
10.5 — — dB
18 — — %
Impedance Data (data shown for fixed-tuned broadband circuit)
(VCC = 26 Vdc, P
Z Source Z Load
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
= 1 W, ICQ = 40 mA)
out
Frequency Z Source Z Load
MHz R jX R jX
1477 10.42 -1.49 8.69 15.67
1489 10.20 -1.26 8.84 16.01
1501 9.87 -1.05 9.08 16.44
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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Specifications subject to change
without notice.
LF
© Ericsson Components AB 1994
EUS/KR 1301-PTB 20046 Uen Rev. D 09-28-98