Ericsson PTB20038 Datasheet
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Description
PTB 20038
25 Watts, 860–900 MHz
Cellular Radio RF Power Transistor
The 20038 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation across the 860 to 900 MHz frequency
band. Rated at 25 watts minimum output power, it may be used for
both CW and PEP applications. It is specifically designed for high
efficiency operation at average power levels around 10 watts with
high PEP capacity. Ion implantation, nitride surface passivation and
gold metallization are used to ensure excellent device reliability . 100%
lot traceability is standard.
Typical Output Pow er vs. Input Pow er
40
35
30
25
20
15
10
Output Power (Watts)
5
0
012345
Input Power (Wa tts)
VCC = 25 V
I
= 100 mA
CQ
f = 900 MHz
25 Watts, 860–900 MHz
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
20038
LOT CODE
Package 20200
Maximum Ratings
Parameter Symbol Value Unit
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T
Above 25°C derate by 0.37 W/°C
Storage Temperature Range T
Thermal Resistance (T
9/28/98
flange
= 25°C P
flange
= 70°C) R
1
CER
CBO
EBO
C
D
STG
θJC
40 Vdc
50 Vdc
4.0 Vdc
6.7 Adc
65 Watts
–40 to +150 °C
2.7 °C/W
PTB 20038
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Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E IB = 0 A, IC = 100 mA V(
Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V(
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(
DC Current Gain VCE = 5 V, IC = 1 A h
BR)CEO
BR)CES
BR)EBO
FE
25 30 — Volts
55 70 — Volts
3.5 5 — Volts
20 50 100 —
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(V
Collector Efficiency
(V
Gain
(V
Collector Efficiency
(V
Load Mismatch Tolerance
(V
f = 900 MHz—all phase angles at frequency of test)
= 25 Vdc, P
CC
= 25 Vdc, P
CC
= 25 Vdc, P
CC
= 25 Vdc, P
CC
= 25 Vdc, P
CC
= 25 W, ICQ = 100 mA, f = 900 MHz) G
out
= 25 W, ICQ = 100 mA, f = 900 MHz) η
out
= 10 W, ICQ = 100 mA, f = 900 MHz) G
out
= 10 W, ICQ = 100 mA, f = 900 MHz) η
out
= 10 W, ICQ = 100 mA, Ψ — — 30:1 —
out
pe
C
pe
C
9.0 10.0 — dB
50 — — %
10 11 — dB
35 — — %
Typical Performance
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Efficiency vs. Frequency
80
70
60
50
40
30
20
Efficiency (%)
10
0
840 855 870 885 900 915
(as measeured i n a broadband circuit)
Pout = 25 W
Pout = 10 W
VCC = 25 V
I
= 100m A
CQ
Circuit Tuned for
25 W Load Line
Frequency (MHz)
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
2
Specifications subject to change without notice.
LF
© Ericsson Components AB 1994
EUS/KR 1301-PTB 20038 Uen Rev. D 09-28-98
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