Ericsson PTB20031 Datasheet
e
Description
PTB 20031
40 Watts, 420–470 MHz
RF Power Transistor
The 20031 is a class AB, NPN, common emitter RF power transistor
intended for 24 Vdc operation from 420 to 470 MHz. It is rated at 40
watts minimum output power, and may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability . 100% lot
traceability is standard.
Typical Output Pow er vs. Input Pow er
60
50
40
30
20
10
Output Power (Watts)
0
0246810
Input Power (Wa tts)
VCC = 24 V
I
= 200 mA
CQ
f = 470 MHz
Maximum Ratings
40 Watts, 420–470 MHz
Class AB Characteristics
50% Collector Efficiency at 40 Watts
Gold Metallization
Silicon Nitride Passivated
20031
LOT CODE
Package 20200
Parameter Symbol Value Unit
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T
Above 25°C derate by 1.0 W/°C
Storage Temperature Range T
Thermal Resistance (T
9/23/98
flange
= 25°C P
flange
= 70°C) R
1
CER
CBO
EBO
C
D
STG
θJC
40 Vdc
50 Vdc
4.0 Vdc
10.0 Adc
175 Watts
–40 to +150 °C
1.0 °C/W
PTB 20031
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Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E IB = 0 A, IC = 100 mA V
Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V
(BR)CEO
(BR)CES
(BR)EBO
DC Current Gain VCE = 5 V, IC = 1 A h
FE
25 30 — Volts
50 70 — Volts
3.5 5 — Volts
20 50 120 —
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(V
Collector Efficiency
(V
Intermodulation Distortion
(V
f2 = 470 MHz)
Load Mismatch Tolerance
(V
—all phase angles at frequency of test)
= 24 Vdc, P
CC
= 24 Vdc, P
CC
= 24 Vdc, P
CC
= 24 Vdc, P
CC
= 40 W, ICQ = 200 mA, f = 420–470 MHz) G
out
= 40 W, ICQ = 200 mA, f = 420–470 MHz) η
out
= 40 W(PEP), ICQ = 200 mA, f1 = 469 MHz, IMD — -22 — dBc
out
= 40 W, ICQ = 200 mA, f = 420–470 MHz Ψ — — 5:1 —
out
pe
C
8.0 9.5 — dB
50 — — %
Typical Performance
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Gain & Efficiency vs. Frequency
(as measured in a broadband circuit)
12
11
10
9
Gain (dB)
8
7
6
410 420 430 44 0 450 460 470
Efficiency (%)
Gain (dB)
VCC = 24 V
I
= 200 mA
CQ
Pout = 30 W
Frequency (MHz)
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
2
80
70
60
50
40
Efficiency (%)
30
20
Specifications subject to change
without notice.
LF
© Ericsson Components AB 1995
EUS/KR 1301-PTB 20031 Uen Rev. D 09-23-98
9/23/98
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