Ericsson PTB20017 Datasheet

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Description

PTB 20017

150 Watts, 860–900 MHz

Cellular Radio RF Power Transistor

The 20017 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation across the 860 to 900 MHz cellular
radio frequency band. Rated at 150 watts minimum output power, it
may be used for both CW and PEP applications. Ion implantation,
nitride surface passivation and gold metallization are used to ensure
excellent device reliability. 100% lot traceability is standard.

Typical Output Pow er vs. Input Pow er

240

200

160

120

80

40

Output Power (Watts)

0

0 7 14 21 28 35

Input Power (Wa tts)

VCC = 25 V
I

= 200 mA (per side)

CQ

f = 900 MHz

 150 Watts, 860–900 MHz
 Class AB Characteristics
 50% Collector Efficiency at 150 Watts
 Gold Metallization
 Silicon Nitride Passivated

20017

LOT CODE

Package 20224

Maximum Ratings

Parameter Symbol Value Unit

Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T

Above 25°C derate by 1.89 W/°C
Storage Temperature Range T

Thermal Resistance (T

9/28/98

flange

= 25°C P

flange

= 70°C) R

1

CER
CBO
EBO

C

D

STG

θJC

40 Vdc
60 Vdc

4.0 Vdc
25 Adc

330 Watts

–40 to +150 °C

0.53 °C/W

PTB 20017

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Electrical Characteristics (100% Tested)

Characteristic Conditions Symbol Min Typ Max Units

Breakdown Voltage C to E IB = 0 A, IC = 100 mA V
Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V
DC Current Gain VCE = 5 V, IC = 1 A h

(BR)CEO
(BR)CES
(BR)EBO

FE

25 30 — Volts
55 70 — Volts

3.5 5 — Volts
20 50 100 —

RF Specifications (100% Tested)

Characteristic Symbol Min Typ Max Units

Gain

(V
f = 900 MHz)

Collector Efficiency

(V
f = 900 MHz)

Intermodulation Distortion

(V
f1 = 899 MHz, f2 = 900 MHz)

Load Mismatch Tolerance

(V
f = 900 MHz—all phase angles at frequency of test)

= 25 Vdc, P

CC

= 25 Vdc, P

CC

= 25 Vdc, P

CC

= 25 Vdc, P

CC

= 150 W, ICQ = 200 mA per side, G

out

= 150 W, ICQ = 200 mA per side, η

out

= 150 W(PEP), ICQ = 200 mA per side, IMD — -28 — dBc

out

= 150 W(PEP), ICQ = 200 mA per side Ψ — — 5:1 —

out

pe

C

8.0 9.0 — dB

50 — — %

Impedance Data (data shown for fixed-tuned broadband circuit)

(V

= 25 Vdc, P

CC

= 150 W, ICQ = 200 mA per side)

out

Z Source Z Load

Frequency Z Source Z Load

MHz R jX R jX

860 3.4 -6.7 3.5 -3.1
880 3.1 -6.1 3.4 -2.6
900 2.9 -5.6 3.2 -2.1

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