Ericsson PTB20009 Datasheet
e
Description
PTB 20009
2.5 Watts, 935–960 MHz
Cellular Radio RF Power Transistor
The 20009 is a class AB, NPN, common emitter RF power transistor
intended for 24 Vdc operation across the 935 to 960 MHz frequency
band. Rated at 2.5 Watts minimum output power, it may be used for
both CW and PEP applications. Ion implantation, nitride surface
passivation and gold metallization are used to ensure excellent device
reliability. 100% lot traceability is standard.
Typical Output Pow er vs. Input Pow er
6
VCC = 24 V
5
I
= 50 mA
CQ
f = 960 MHz
4
3
2
Output Power (Watts)
1
0
0.00 0.15 0.30 0.45 0.60 0.75
Input Power (Watts)
Maximum Ratings
2.5 Watts, 935–960 MHz
Class AB Characteristics
50% Collector Efficiency at 2.5 Watts
Gold Metallization
Silicon Nitride Passivated
20009
LOT CODE
Package 20206
Parameter Symbol Value Unit
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T
Above 25°C derate by 0.077 W/°C
Storage Temperature Range T
Thermal Resistance (T
9/28/98
flange
= 25°C P
flange
= 70°C) R
1
CER
CBO
EBO
C
D
STG
θJC
40 Vdc
50 Vdc
4.0 Vdc
1.7 Adc
13.5 Watts
–40 to +150 °C
13.0 °C/W
PTB 20009
e
Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E IB = 0 A, IC = 50 mA V
Breakdown Voltage C to E VBE = 0 V, IC = 50 mA V
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V
DC Current Gain VCE = 5 V, IC = 250 A h
(BR)CEO
(BR)CES
(BR)EBO
FE
25 30 — Volts
55 70 — Volts
3.5 5 — Volts
20 50 120 —
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(V
Collector Efficiency
(V
Load Mismatch Tolerance
(V
—all phase angles at frequency of test)
= 24 Vdc, P
CC
= 24 Vdc, P
CC
= 24 Vdc, P
CC
= 2.5 W, ICQ = 50 mA, f = 935–960 MHz) G
out
= 2.5 W, ICQ = 50 mA, f = 935–960 MHz) η
out
= 2.5 W, ICQ = 50 mA, f = 935–960 MHz, Ψ — — 30:1 —
out
pe
C
91012dB
50 — — %
Typical Performance
Gain & Efficiency vs. Frequency
(as measured in a broadband circuit)
13
80
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
12
11
10
VCC = 24 V
Gain (dB)
I
CQ
9
Pout = 2.5 W
8
920 930 940 950 960 970
Efficiency (%)
= 50 mA
Frequency (MHz)
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
2
Gain (dB)
68
56
44
Efficiency (%)
32
20
Specifications subject to change without notice.
LF
© Ericsson Components AB 1995
EUS/KR 1301-PTB 20009 Uen Rev. C 09-28-98
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