Ericsson PTB20006 Datasheet

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Description
PTB 20006
4 Watts, 860–900 MHz
Cellular Radio RF Power Transistor
The 20006 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 4 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.
Typical Output Pow er vs. Input Pow er
12
10
8
6
4
Output Power (Watts)
2
0
0.00 0.15 0.30 0.45 0.60 0.75
Input Power (Wa tts)
VCC = 25 V
= 50 A
I
CQ
f = 900 MHz
4 Watts, 860–900 MHzClass AB Characteristics50% Collector Efficiency at 4 WattsGold MetallizationSilicon Nitride Passivated
20006
LOT CODE
Package 20201
Maximum Ratings
Parameter Symbol Value Unit
Collector-Emitter Voltage V Collector-Base Voltage V Emitter-Base Voltage (collector open) V Collector Current (continuous) I Total Device Dissipation at T
Above 25°C derate by 0.2 W/°C Storage Temperature Range T
Thermal Resistance (T
9/28/98
flange
= 25°C P
flange
= 70°C) R
1
C
D
STG
θJC
40 Vdc 50 Vdc
4.0 Vdc
1.7 Adc 35 Watts
–40 to +150 °C
5.0 °C/W
PTB 20006
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Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E IB = 0 A, IC = 50 mA V( Breakdown Voltage C to E VBE = 0 V, IC = 50 mA V( Breakdown Voltage E to B IC = 0 A, IE = 5 mA V( DC Current Gain VCE = 5 V, IC = 250 mA h
BR)CEO BR)CES BR)EBO
FE
25 30 Volts 55 70 Volts
3.5 5 Volts 20 50 120
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(V
Collector Efficiency
(V
Intermodulation Distortion
(V f1 = 860MHz, f2 = 861 MHz)
Load Mismatch Tolerance
(V —all phase angles at frequency of test)
= 25 Vdc, P
CC
= 25 Vdc, P
CC
= 25 Vdc, P
CC
= 25 Vdc, P
CC
= 4 W, ICQ = 50 mA, f = 860 MHz) G
= 4 W, ICQ = 50 mA, f = 860 MHz) η
= 4 W(PEP), ICQ = 50 mA, IMD -25 dBc
= 4 W, ICQ = 50 mA, f = 860 MHz Ψ 30:1
pe
C
11.0 13.0 dB
45 %
Impedance Data (data shown for fixed-tuned broadband circuit)
(V
CC
= 25 Vdc, P
= 4 W, ICQ = 50 mA)
Z Source Z Load
Frequency Z Source Z Load
MHz R jX R jX
860 5.3 -5.5 2.4 11.0 880 5.0 -5.0 2.3 11.6 900 4.9 -4.4 2.1 12.0
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