Ericsson PBL40309 Datasheet

PBL 403 09

Preliminary

August 2000

PBL 403 09

3.6 V Differential Power Amplifier

for DECT Telecommunications system

Description.

The PBL 403 09 is a differential two stage silicon MMIC power amplifier intended for
use in handheld cordless terminals in the 1900 MHz band. It can deliver more than 27
dBm at 1900 MHz into a balanced 50 Ω load using a single 3.6 V supply. The circuit has
a logic input to control transmit on/off and can be operated up to 100 % duty cycle with
minimum performance degradation. The circuit is housed in a specially designed
QSOP16 (150 mil body ) package and the implementation requires only few external
components.

25 GHz ft state-of-the-art deep trench isolated double-poly silicon bipolar process
with additional features for improved wireless performance has been used. On-chip
capacitors and inductors are used for the integrated internal matching network. Special
front-side metallized substrate contacts provide excellent ground paths from active
devices to the highly doped semiconductor substrate and package ground.

V

CC

RF In A

RF Out A & V

CC

Key features.

• 27 dBm output power

• 25 dB small signal gain

• 50 % Power Added Efficiency

• Simple logic on/off power control

• Battery charging conditions to 5.0 V

• ESD protected

• Excellent ruggedness

• On-chip input and interstage
matching

• Differential input matched to 50 Ω

• Easy implementation with a simple
output matching network

• Proven RF Silicon Technology

Reliability

RF In B

Figure 1. Block diagram.

Power Control

PA-ON

RF Out B & V

CC

• Low overall solution cost

Applications.

• DECT

PBL 403 09

Figure 2. Package outlook.

1

PBL 403 09

40

42

44

46

48

50

52

54

22.533.54
Vcc [V]

Pout [dBm]

Pin = 10 dBm

Pin = 4 dBm

Maximum Ratings

Parameter Symbol Min. Max. Unit

Supply voltage, continuous Vcc - 5.2 V
All inputs (zener protection) 6.5 V
Operating case temperature T
Storage temperature range T

op

Stg

Electrical Characteristics at room temperature

Unless otherwise stated the values below are valid for Vcc = 3.6 V, Pin = 4dBm, ZL = 50 Ω and f = 1900 MHz, pulsed mode
t = 417 µs, duty cycle 1/24. All data as measured in the recommended typical application circuit.

Parameter Condition Symbol Min. Typ. Max. Unit

Frequency range f 1880 1930 MHz
Power output PA - ON = low P 27 29 - dBm
Power Added Efficiency P
Power Added Efficiency P
Small signal Gain P
Isolation PA - ON = high, P

and 3

rd

harmonics PA - ON = low, Pin < 4 dBm -35 dBc

nd

2
Input VSWR 1.6:1 3:1
Load Mismatch P

Stability and spurious P

Supply current No input signal present, I

Supply current P
Supply current PA - ON = high I
Rise time P

Fall time P

PA - ON = low -0.5 0.5 V
PA - ON = high Vcc -0.5 Vcc +0.5 V
I ( PA - ON ) low 110 130 µA

in = 10 dBm PAE 45 50 - %
in = 4 dBm PAE 35 43 - %
in = -10 dBm G 25.5 - dB

in = 4 dBm -35 -30 dB

in = 4-10 dBm, Vcc = 5.2 V, no damage for 10 sec.

Load VSWR = 6:1 all phases

in = 4-10 dBm, Vcc = 3.0-5.2 V, All spurious below - 36 dBm

Load VSWR = 5:1 all phases

PA - ON = low

in = 4 dBm IDC 550 mA

out to 1dB from final value. tr 1 µA

Measure time from switch to low.

out to less than -20 dB measured tf 2 µs

from PA - ON pulse switched to high

-25 +80 °C

-30 +100 °C

DC 135 mA

DC 110µA

35

30

25

20

15

10

Pout [dBm]or Gain [dB]

5

0

-10 -5 0 5 10 15

Figure 3. P

Pin [dBm]

out

, Gain and PAE vs. P

Vcc = 3.6 V

2

Pout [dBm]
Gain [dB]
PAE [%]

70

60

50

40

30

PAE [%]

20

10

0

in

32

30

28

Pout [dBm]

26

24

2 2.5 3 3.5 4

Figure 4. P
and 10 dBm

Pin = 10 dBm

Pin = 4 dBm

Vcc [V]

out

vs. Vcc for Pin = 4 dBm

Figure 5. PAE vs.Vcc for Pin = 4 dBm
and 10 dBm