Ericsson PBL40305 Datasheet

PBL 403 05

PBL 40305

January 2001

PBL 403 05

Multiband GSM Power Amplifier

Description.

The PBL 403 05 is a dual line-up GaAs MMIC power amplifier intended for use in
multiband GSM terminals. Powered of a 3.2V supply it delivers more than 34.5 dBm
output power at GSM900 and more than 31.5 dBm output power at DCS1800 or
PCS1900 frequencies.

The circuit uses an analog control signal to control the output power level. The circuit
is housed in a specially designed QSOP28 (150 mil body) package with no special
mounting requirements.

The circuit is manufactured in a high performance MESFET process that ensures
ruggednes for environmental variations.

VD1_DCS

VD2_DCS

Current generator

CA

VDC

Key features.

• One IC handles GSM900, DCS
1800 and PCS1900 bands.

• Low cost solution.

• Inputs matched to 50 Ω

• Digital band select function.

• Analog gain control.

• Proven GaAs MESFET-reliability.

• Tape and Reel.

• SMD QSOP 28 package.

RFIN_DCS

RFIN_GSM

VD1_GSM

Figure 1. Block diagram.

VD2_GSM

VD3GSM

VNEG

BIAS

VSEL

VD3_DCS

RFOUTGSM

VAPC

Figure 2. Package outlook.

1

PBL 403 05

Maximum Ratings:

T

= + 25°C unless otherwise stated.

AMB

Parameter Conditions Symbol Min. T yp. Max. Unit

Supply voltage short supply spike V
Supply voltage V
Power control voltage V
Operating Case Temperature T
Storage Temperature Range T

DD

DD

APC

CASE

STORAGE

-25 +80 °C

-30 +100 °C

Electrical Characteristics for PA in GSM 900 mode:

= 3.2 V, T

V

CC

noted. Pulsed operation with pulse width of 577µs and a duty cycle of 1:8. V

Parameter Conditions Symbol Min. Typ. Max. Unit

Output Power V
Power added efficiency P

nd

2

harmonic - 0 dBm < P

rd

3

harmonic - 0 dBm < P

Isolation P

Power degradation P
V
Stability and leakage spurious Output VSWR = 6:1 all phases No parasitic oscillations

Noise power 935 - 960 MHz -90 dBm

Input S11 V
Input S11 P

= + 25°C, Z = 50 Ω, PIN = 10 dBm, f = 880 - 915 MHz and V

AMB

= 3.15 V P

APC

< 34.5 dBm 2 f

OUT

< 34.5 dBm 3 f

OUT

= 11.5 dBm, V

IN

T

= -25 °C to +75 °C

AMB

= 8.5 dBm, V

IN

= 2.8 V, T

APC

<= 0.5 V -30 -20 dBm

APC

= 0.6 V, 33 dBm

SEL

= -25 °C to +75 °C

AMB

All combinations of following when I
parameters: P

V

= 2.7 V to 5.1 V

DD

T

= -25 °C to +75 °C

AMB

925 - 935 MHz

= 0.5 V , -5.2 -5.0 dBm

APC

= 34.5dBm -12 -6.0 dBm

OUT

=5 to 34.5dBm(50Ω) All spurious < -36 dBm

OUT

RBW = 30 kHz

adjusted to give P

APC

= -4.0 V, V

NEG

OUT

AE

o

o

= 34.5 dBm unless othervise

OUT

= 0.0 V.

SEL

34.5 34.7 dBm
50 53 %

-7.0 0 dBm

-27 0 dBm

< 2.2 A

DD

6.0 V

5.0 V

4.2 V

-78 dBm

Electrical Characteristics for PA in DCS 1800 mode:

VCC = 3.2 V, T
dBm unless othervise noted. Pulsed operation with pulse width of 577µs and a duty cycle of 1:8. V

Parameter Conditions Symbol Min. Typ. Max. Unit

Output Power V
Power added efficiency P

nd

2

harmonic - 0 dBm < P

rd

3

harmonic - 0 dBm < P

Isolation PIN = 10.5 dBm, V

Power degradation P
V

2

= + 25°C, Z = 50 Ω, PIN = 9 dBm, f = 1710 - 1785 MHz / 1850 - 1910 MHz and V

AMB

= 3.15 V P

APC

= 31.5 dBm P

OUT

< 31.5 dBm 2 f

OUT

< 31.5 dBm 3 f

OUT

= 0.5 V -35 -30 dBm

T

= -25 °C to +75 °C

AMB

= 7.5 dBm, V

IN

= 2.8 V, T

APC

APC

= 2.85 V 30 30.5 dBm

DD

= -25 °C to +75 °C

AMB

OUT

AE

o

o

adjusted to give P

APC

= -4.0 V, V

NEG

SEL

OUT

= 2.0 V.

= 31.5

31.5 31.7 dBm
37 41 %

-8.0 0 dBm

-15 0 dBm

PBL 403 05

Parameter Conditions Symbol Min. T yp. Max. Unit

Stability and leakage spurious Output VSWR = 6:1 all phases No parasitic oscillations

All combinations of following when I
parameters: P

V

= 2.7 V to 5.1 V RBW = 3 MHz

DD

T

= -25 °C to +75 °C

AMB

Noise power 1805 - 1880 MHz -76 dBm

935 - 960 MHz

=5 to 31.5dBm(50Ω) All spurious < -36 dBm

OUT

RBW = 30 kHz

925 - 935 MHz -70
Input S11 V
Input S11 P

= 0.5 V, -5.0 -4.0 dBm

APC

= 31.5dBm -14 -6.0 dBm

OUT

Common specifications:

Parameter Conditions Symbol Min. Typ. Max. Unit

Isolation at GSM RF output f = f
when DCS is active f = 2 • f

0

, f0 = 1750 - 1785 MHz -30 dBm

0

< 2.20 A

DD

-82 dBm

-20 dBm

Isolation at DCS RF output f = 2 • f
when GSM is active f = 3 • f

0

, f0 = 880 - 915 MHz -30 -25 dBm

0

-18 -15 dBm

Power regulation characteristics:

Parameter Conditions Symbol Min. Typ. Max. Unit

Power control range GSM: V

DCS: V
Power control slope V

APC

Switching time Step in V

= 0.5 - 3.15 V -20 34.5 dBm

APC

= 0.5 - 3.15 V -30 31.5 dBm

APC

= 0.5 - 3.15 V 150 dB/V

giving P

ref

= -15 to 2 µs

OUT

32.5 dBm, up and down

Power control current V
consumption

Band select current consumption V
Negative supply current V

<= 3.15 V I

APC

V

= 0 - 3 V

SEL

= 0 - 3 V, V

SEL

= 0 V, V

SEL

<= 3.15 V I

APC

<= 3.15 V I

APC

APC

SEL

NEG

45mA

0.01 0.1 mA

5.5 7.0 mA

consumption

Current generator:

Parameter Conditions Symbol Min. Typ. Max. Unit

Input resistance VDC- VCA < 0.8 V R
Charge current V

= 1.5 - 5.0 V, VCA = 0 V I

DC

ON

GSAT

100 150 Ω

6.7 10 mA

3