PBL 386 30/2
2
Maximum Ratings
Parameter Symbol Min Max Unit
Temperature, Humidity
Storage temperature range
T
Stg
-55 +150 °C
Operating temperature range
T
Amb
-40 +110 °C
Operating junction temperature range, Note 1
T
J
-40 +140 °C
Power supply, -40 °C ≤ T
Amb
≤ +85 °C
V
CC
with respect to A/BGND V
CC
-0.4 6.5 V
V
Bat2
with respect to A/BGND V
Bat2
V
Bat
0.4 V
V
Bat
with respect to A/BGND, continuous V
Bat
-75 0.4 V
V
Bat
with respect to A/BGND, 10 ms V
Bat
-80 0.4 V
Power dissipation
Continuous power dissipation at T
Amb
≤ +85 °CP
D
1.5 W
Ground
Voltage between AGND and BGND V
G
-0.3 0.3 V
Relay Driver
Ring relay supply voltage BGND+14 V
Ring trip comparator
Input voltage V
DT
, V
DR
V
Bat
AGND V
Input current I
DT
, I
DR
-5 5 mA
Digital inputs, outputs (C1, C2, DET)
Input voltage V
ID
-0.4 V
CC
V
Output voltage V
OD
-0.4 V
CC
V
TIPX and RINGX terminals, -40°C < T
Amb
< +85°C, V
Bat
= -50V
Maximum supplied TIPX or RINGX current I
TIPX
, I
RINGX
-100 +100 mA
TIPX or RINGX voltage, continuous (referenced to AGND), Note 2 VTA, V
RA
-80 2 V
TIPX or RINGX, pulse < 10 ms, t
Rep
> 10 s, Note 2 VTA, V
RA
V
Bat
-10 5 V
TIPX or RINGX, pulse < 1 µs, t
Rep
> 10 s, Note 2 VTA, V
RA
V
Bat
-25 10 V
TIPX or RINGX, pulse < 250 ns, t
Rep
> 10 s, Notes 2 & 3 VTA, V
RA
V
Bat
-35 15 V
Recommended Operating Condition
Parameter Symbol Min Max Unit
Ambient temperature T
Amb
-40 +85 °C
V
CC
with respect to AGND V
CC
4.75 5.25 V
V
Bat
with respect to AGND V
Bat
-58 -8 V
AGND with respect to BGND V
G
-100 100 mV
Notes
1. The circuit includes thermal protection. Operation at or above 140°C junction temperature may degrade device reliability.
2. With the diodes DVB and D
VB2
included, see figure 11.
3. R
F1
and RF2 ≥ 20 Ω is also required. Pulse is applied to TIP and RING outside RF1 and RF2.