EPCOS B72500D User Manual

CeraDiode CDS3 Series

SMD type, case size 0603 B72500D***

Data sheet

CeraDiode
Reliable ESD protection of single lines

Description

Due to the ongoing miniaturization, today’s electronic devices are more and more sensitive to
electrostatic discharges (ESD) and overvoltages. Therefore reliable protection components become
absolutely necessary to harden your valuable electronics against the impact of ESD.

CeraDiodes are ceramic semiconductors optimized specifically for high performance in Electro Static
Discharge (ESD) applications. The device has a non-linear voltage/current characteristic that is highly
optimized for effectively suppressing extremely fast voltage transients. The device offers superior
parametric stability over the complete operating range of –40 °C to +85 °C.

CeraDiodes are bi-directional devices. A single CeraDiode
routes both positive and negative ESD transitions safely to the ground plane. This technique
eliminates the need to route ESD charge into the power plane, possibility damaging nearby integrated
circuits.



connected from signal/dataline to ground

Features



ESD protection according to IEC 61000-4-2 (Level 4)



Endurance specification up to 3000 ESD pulses (IEC 61000-4-2 Level 4)



Suitable for uni- and bidirectional lines



Bidirectional ESD protection in a two-pin device



Routes all ESD events, both positive and negative, safely to ground



Suitable for DC working voltages up to 22 V



No derating of maximum ratings up to 85 °C



Surface mount package in 0603 case size



Extremely fast response time < 0.5 ns



Lead free nickel barrier terminations

Application



Desktop and notebook computers



Peripherals



Portable handheld products (e.g. PDA)



Mobile communication



Consumer products (set top box, MP3 player, digital cameras,...)



Liquid crystal displays (LCD) / monitors

ISSUE DATE 07.10.2004 ISSUE g PUBLISHER KB VS PE PAGE 1/8

CeraDiode CDS3 Series

SMD type, case size 0603 B72500D***

Data sheet

Application example

Protection of I/O Lines with discrete CeraDiodes

I/O

ESD

sensitive

device

CDS

Ground

Maximum ratings (TA = 85 °C)

Rating Symb. Value Unit

Max. DC working voltage VDC CDS3C05GTA: 5.6

Peak current @ 8/ 20 µs I

Peak pulse power @ 8/ 20 µs PPP CDS3C05GTA: 1000

Air discharge ESD capability
(according to IEC 61000-4-2 method)

Contact discharge ESD capability
(according to IEC 61000-4-2 method)

Operating temperature
(without derating)

Storage temperature T

V
CDS3C09GTA: 9.0
CDS3C15GTA: 16.0
CDS3C20GTA: 22.0

30 A

peak

W
CDS3C09GTA: 1600
CDS3C15GTA: 2000
CDS3C20GTA: 2200

V

15 kV

ESD

V

8 kV

ESD

Tj

stg

−40 to +85

−40 to +125

°C

°C

ISSUE DATE 07.10.2004 ISSUE g PUBLISHER KB VS PE PAGE 2/8

CeraDiode CDS3 Series

SMD type, case size 0603 B72500D***

Data sheet

Characteristics (TA = 25 °C)

CDS3C05GTA

Parameter Symb. Conditions Minimum Typical Maximum Unit

Breakdown voltage VBR I

Leakage current *) I

V

L

Clamping voltage VCL I

Capacitance C V = 1 V, f = 1 MHz - 470 - pF

CDS3C09GTA

Parameter Symb. Conditions Minimum Typical Maximum Unit

Breakdown voltage VBR I

Leakage current *) I

V

L

Clamping voltage VCL I

Capacitance C V = 1 V, f = 1 MHz - 220 - pF

CDS3C15GTA

Parameter Symb. Conditions Minimum Typical Maximum Unit

= 1 mA 6.4 - V

BR

= 3.3 V - - 10 µA

L

= 1 A, 8/20 µs - - 19 V

peak

= 1 mA 10 - - V

BR

= 5.6 V - - 10 µA

L

= 1 A, 8/20 µs - - 30 V

peak

Breakdown voltage VBR I

Leakage current *) I

V

L

Clamping voltage VCL I

= 1 mA 22 - - V

BR

= 9 V - - 10 µA

L

= 1 A, 8/20 µs - - 42 V

peak

Capacitance C V = 1 V, f = 1 MHz - 160 - pF

CDS3C20GTA

Parameter Symb. Conditions Minimum Typical Maximum Unit

Breakdown Voltage VBR I

Leakage Current *) I

V

L

Clamping Voltage VCL I

= 1 mA 25 - - V

BR

= 12 V - - 10 µA

L

= 1 A, 8/20 µs - - 50 V

peak

Capacitance C V = 1 V, f = 1 MHz - 56 - pF

*)

Any lower operating voltage than VL results in a lower leakage current

ISSUE DATE 07.10.2004 ISSUE g PUBLISHER KB VS PE PAGE 3/8