eorex EM6112K800V User Manual

512Kx8 LP SRAM EM6112K800V Series

GENERAL DESCRIPTION

The EM6112K800V is a 4,194,304-bit low power CMOS static random access memory organized as
524,288 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology.
Its standby current is stable within the range of operating temperature.
The EM6112K800V is well designed for low power application, and particularly well suited for battery
back-up nonvolatile memory application.
The EM6112K800V operates from a single power supply of 2.7V ~ 3.6V and all inputs and outputs are
fully TTL compatible

FEATURES

z Fast access time: 45/55/70ns
z Low power consumption:

Operating current:
40/30/20mA (TYP.)
Standby current: -L/-LL version
20/2µA (TYP.)

z Single 2.7V ~ 3.6V power supply
z All inputs and outputs TTL compatible

z Fully static operation
z Tri-state output
z Data retention voltage: 1.5V (MIN.)
z Package:

32-pin 450 mil SOP
32-pin 8mm x 20mm TSOP-I
32-pin 8mm x 13.4mm STSOP
36-ball 6mm x 8mm TFBGA

FUNCTIONAL BLOCK DIAGRAM

Vcc
Vss

A0-A18

DQ0-DQ7

CE#
WE#
OE#

DECODER

CURCUIT

CONTROL

PIN DESCRIPTION

SYMBOL DESCRIPTION

A0 - A18 Address Inputs
DQ0 – DQ7 Data Inputs/Outputs
CE# Enable Input
WE# Write Enable Input
OE# Output Enable Input
Vcc
Vss Ground

Power Supply

I/O DATA

CIRCUIT

512Kx8

MEMORY

ARRAY

COLUMN I/O

1 DCC-SR-041005-A

512Kx8 LP SRAM EM6112K800V Series

PIN CONFIGURATION

SOP

A18

A16

A14

A12

A7

A6

A5

A4

A3

A2

A1

A0

DQ0

DQ1

DQ2

Vss

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

32

31

30

29

28

27

26

25

24

23

22

21

20

19

18

17

Vcc

A15

A17

WE#

A13

A8

A9

A11

OE#

A10

CE#

DQ7

DQ6

DQ5

DQ4

DQ3

TSOP-I/STSOP

A11
A9
A8
A13
WE#
A17
A15
Vcc
A18
A16
A14
A12
A7
A6
A5
A4

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16

32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17

OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
Vss
DQ2
DQ1
DQ0
A0
A1
A2
A3

2 DCC-SR-041005-A

512Kx8 LP SRAM EM6112K800V Series

TFBGA

A A0 A1 NC A3 A6 A8
B DQ4 A2 WE# A4 A7 DQ0
C DQ5 NC A5 DQ1
D Vss Vcc
E Vcc Vss

F DQ6 A17 A18 DQ2
G DQ7 OE# CE# A16 A15 DQ3
H A9 A10 A11 A12 A13 A14

1 2 3 4 5 6

3 DCC-SR-041005-A

512Kx8 LP SRAM EM6112K800V Series

ABSOLUTE MAXIMUN RATINGS*

PARAMETER SYMBOL RATING UNIT

Terminal Voltage with Respect to Vss VTERM -0.5 to 4.6 V

0 to 70(C grade)

Operating Temperature TA

-20 to 80(E grade)

°C

-40 to 85(I grade)

Storage Temperature TSTG -65 to 150 °C

Power Dissipation PD 1 W

DC Output Current IOUT 50 mA

Soldering Temperature (under 10 sec) TSOLDER 260 °C

*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device
reliability.

TRUTH TABLE

MODE CE# OE# WE# I/O OPERATION SUPPLY CURRENT

Standby H X X High-Z ISB,ISB1
Output Disable L H H High-Z ICC,ICC1
Read L L H DOUT ICC,ICC1
Write L X L DIN ICC,ICC1

Note: H = VIH, L = VIL, X = Don't care.

DC ELECTRICAL CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITION MIN. TYP.

Supply Voltage Vcc
Input High Voltage VIH*1

Input Low Voltage VIL*2
Input Leakage

ILI Vcc ≧ VIN ≧ Vss -1 - +1 µA

2.7 3.0 3.6 V

2.0 - Vcc+

-0.2 - 0.6 V

Current
Output Leakage
Current
Output High

ILO VCC ≧ VOUT ≧ VSS,

Output Disabled

-1 - 1 µA

VOH IOH = -1mA 2.2 2.7 - V

Voltage
Output Low

VOL IOL = 2mA - - 0.4 V

Voltage
Average Operating
Power supply
Current

ICC Cycle time = Min.

CE# = VIL , II/O = 0mA

I

CC1 Cycle time = 1µs

-45 - 40 50 mA

-55 - 30 40 mA

-70 - 20 30 mA

- 4 5 mA

CE#≦0.2V and II/O = 0mA

Standby Power
Supply Current

other pins at 0.2V or V

ISB CE# = VIH

I

SB1 CE# V ≧ VCC - 0.2V

CC-0.2V

- 0.3 0.5 mA

-L - 20 80 µA

-LL 2 15 µA

Notes:

1. VIH(max) = VCC + 3.0V for pulse width less than 10ns.

2. VIL(min) = VSS - 3.0V for pulse width less than 10ns.

3. Over/Undershoot specifications are characterized, not 100% tested.

4. 10µA for special request

5. Typical values are included for reference only and are not guaranteed or tested.
Typical valued are measured at VCC = VCC(TYP.) and TA = 25°C

*5 MAX. UNIT

V

0.3

4 DCC-SR-041005-A