EON EN27C512 User Manual

查询EN27C512供应商

EN27C512 512KBIT EPROM (64K x 8)

FEATURES

EN27C512

•

Fast Read Access Time

:

-45, -55, -70, and -90ns

•

Single 5V Power Supply

•

Programming Voltage +12.75V

•

QuikRite

•

Typical programming time 20µs

•

Low Power CMOS Operation

• 1µ

•

30mA Operation (Max.)

•

CMOS- and TTL-Compatible I/O

•

High-Reliability CMOS Technology

TM

Programming Algorithm

A Standby (Typical)

•

Latch-Up Immunity to 100mA
from -1V to V

•

Two-Line Control (

•

Standard Product Identification Code

•

JEDEC Standard Pinout

•

28-pin PDIP

•

32-pin PLCC

•

28-pin TSOP (Type 1)

•

Commercial and Industrial Temperature

CC

+ 1V

OE&CE)

Ranges

GENERAL DESCRIPTION

The EN27C512 is a low-power 512Kbit, 5V-only one-time-programmable (OTP) read-only
memory (EPROM). Organized into 64K words with 8 bits per word, it features QuikRite
address location programm ing, typically at 20µs per byte. Any byte can be accessed in less than
45ns, eliminating the need for W AIT states in high-performance microprocessor systems. The
EN27C512 has separate Output Enable (
bus contention issues.

OE ) and Chip Enable ( CE ) controls which eliminate

TM

single-

FIGURE 1. PDIP

Pin Name Function

A0-A15 Addresses
DQ0-DQ7 Outputs

CE Chip Enable
OE Output Enable

NC No Connect

4800 Great America Parkway Ste 202 Tel: [phone]
Santa Clara, CA. 95054 Fax: [phone]

1

EN27C512

FIGURE 2. TSOP

FIGURE 3. PLCC

4800 Great America Parkway Ste 202 Tel: [phone]
Santa Clara, CA. 95054 Fax: [phone]

2

EN27C512

FIGURE 4. BLOCK DIAGRAM

FUNCTIONAL DESCRIPTION
THE QUIKRITETM PROGRAMMING OF THE EN27C512

When the EN27C512 is delivered, the chip has all 512K bits in the “ONE”, or
HIGH state. “ZEROs” are loaded into the EN27C512 through the procedure of programming.

The programming mode is entered when 12.75 ± 0.25V is applied to the

CEis at V

. For programming, the data to be programmed is applied with 8 bits in parallel to

IL

the data pins.

The QUIKRITE

TM

programming flowchart in Figure 5 shows Eon’s interactive programming
algorithm. The interactive algorithm reduces programming time by using 20 µs to 100 µs
programming pulses and giving each address only as many pulses as is necessary in order to

reliably program the data. After each pulse is applied to a given address, the data in that
address is verified. If the data is not verified, additional pulses are given until it is verified or
until the maximum number of pulses is reached. This process is repeated while sequencing
through each address of the EN27C512. This part of the programming algorithm is done at

= 6.25V to assure that each EPROM bit is programmed to a sufficiently high threshold

V

CC

voltage. This ensures that all bits have sufficient margin. After the final address is completed,
the entire EPROM memory is read at V

= 5.25 ± 0.25V to verify the entire memory.

CC

OE/V

PP

pin and

4800 Great America Parkway Ste 202 Tel: [phone]
Santa Clara, CA. 95054 Fax: [phone]

3

EN27C512

PROGRAM INHIBIT MODE

Programming of multiple EN27C512 in parallel with different data is also easily accomplished
by using the Program Inhibit Mode. Except for
may be common. A TTL low-level program pulse applied to an EN27C512

OE/V

= 12.75 ± 0.25V will program that EN27C512. A high-level CEinput inhibits the

PP

other EN27C512 from being programmed.

PROGRAM VERIFY MODE

Verification should be performed on the programmed bits to determining that they were
correctly programmed. The verification should be performed with
should be verified at

t

after the falling edge of CE.

DV

CE, all like inputs of the parallel EN27C512

CEinput with

OE/V

and CEat VIL. Data

PP

AUTO PRODUCT IDENTIFICATION

The Auto Product Identification mode allows the reading out of a binary code from an EPROM that
will identify its manufacturer and type. This mode is intended for use by programming equipment
for the purpose of automatically matching the device to be programmed with its corresponding
programming algorithm. This mode is functional in the 25°C ± 5°C ambient temperature range
that is required when programming the EN27C512.

To activate this mode, the programming equipment must force 12.0 V ± 0.5V on address line A9
of the EN27C512. Two identifier bytes may then be sequenced from the device outputs by

toggling address line A0 from V
V

during Auto Product Identification mode.

IL

Byte 0 (A0 = V

) represents the manufacturer code, and byte 1 (A0 = VIH), the device code. For

IL

the EN27C512, these two identifiers bytes are given in the Mode Select Table. All identifiers for
manufacturer and device codes will possess odd parity, with the MSB (DQ7) defined as the parity

When A1 = VIL, the EN27C512 will read out the binary code of 7F, continuation code, to

bit.
signify the unavailability of manufacturer ID codes.

to VIH, when A1 = VIH. All other address lines must be held at

IL

4800 Great America Parkway Ste 202 Tel: [phone]
Santa Clara, CA. 95054 Fax: [phone]

4

EN27C512

READ MODE

The EN27C512 has two control functions, both of which must be logically satisfied in order to
obtain data at the outputs. Chip Enable (
device selection. Output Enable (
the output pins, independent of device selection. Assuming that addresses are stable,
address access time (t
the outputs (t

) after the falling edge of OE, assuming the CEhas been LOW and

OE

) is equal to the delay from CE to output (tCE) . Data is available at

ACC

addresses have been stable for at least t

STANDBY MODE

CE) is the power control and should be used for

OE) is the output control and should be used to gate data to

- tOE.

ACC

The EN27C512 has CMOS standby mode which reduces the maximum V
It is placed in CMOS standby when
standby mode which reduces the maximum V
standby when
state, independent of the

CEis at V

. When in standby mode, the outputs are in a high-impedance

IH

OEinput.

CEis at V

± 0.3 V. The EN27C512 also has a TTL-

CC

current to 1.0 mA. It is placed in TTL-

CC

current to 20µA.

CC

TWO-LINE OUTPUT CONTROL FUNCTION

To accommodate multiple memory connections, a two-line control function is provided to allow
for:

1. Low memory power dissipation,

2. Assurance that output bus contention will not occur.

It is recommended that

CEbe decoded and used as the primary device-selection function, while

OEbe made a common connection to all devices in the array and connected to the READ line

from the system control bus. This assures that all deselected memory devices are in their low­power standby mode and that the output pins are only active when data is desired from a
particular memory device.

SYSTEM CONSIDERATIONS

During the switch between active and standby conditions, transient current peaks are produced
on the rising and falling edges of Chip Enable. The magnitude of these transient current peaks
is dependent on the output capacitance loading of the device. At a minimum, a 0.1µF ceramic
capacitor (high frequency, low inherent inductance) should be used on each device between V

CC

and VSS to minimize transient effects. In addition, to overcome the voltage drop caused by the
inductive effects of the printed circuit board traces on EPROM arrays, a 4.7µF bulk electrolytic
capacitor should be used between V

and VSS for each eight devices. The location of the

CC

capacitor should be close to where the power supply is connected to the array.

4800 Great America Parkway Ste 202 Tel: [phone]
Santa Clara, CA. 95054 Fax: [phone]

5

MODE SELECT TAB

/

EN27C512

Mode CE

Read
Output Disable
Standby (TTL)
Standby (CMOS)
Program

(4)

Program Verify
Program Inhibit
Manufacturer Code
Device Code

(3)

(3)

V
V
V
V
V
V
V
V
V

IL
IL
IH

± 0.3V

CC
IL
IL
IH
IL
IL

OE

V

PP

V

IL

V

IH

A0 A9 Output

XXD

X X High Z
X X X High Z
X X X High Z
V

PP

V

IL

V

p p

V

IL

V

IL

XXD

XXD

X X High Z

V

IL

V

IH

VH(1) 1C

(1)

VH

NOTES:

1) VH = 12.0V ± 0.5V

2) X = Either V

3) For Manufacturer Code and Device Code, A1 = V

IH

or V

IL

IH

When A1 = VIL, both codes will read 7F

4) See DC Programming Characteristics for V

voltage during programming

PP

EON’S STANDARD PRODUCT IDENTIFICATION CODE

Pins

Code
Manufacturer
Device Type
Continuation

A0 A1 DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 DQ0

01000111001C
111000001183
00011111117F
10011111117F

OUT

IN
OUT

83

Hex

Data

4800 Great America Parkway Ste 202 Tel: [phone]
Santa Clara, CA. 95054 Fax: [phone]

6

EN27C512

FIGURE 5. QUIKRITETM PROGRAMMING FLOW CHART

NOTE 1: Either 100µs or 20µs pulse.

4800 Great America Parkway Ste 202 Tel: [phone]
Santa Clara, CA. 95054 Fax: [phone]

7

ABSOLUTE MAXIMUM RATINGS

EN27C512

Storage Temperature

-65àC to +125àC

Ambient Temperature

with Power Applied -40àC to +85àC

Voltage with Respect to V

All pins except A9, VPP, V
A9, V

PP

V

CC

SS

CC

-0.6V to VCC + 0.5V

-0.6V to +13.5V

-0.6V to +7.0V

OPERATING RANGES

Commercial (C)

Case Temperature(Tc) 0àC to +70àC

Industrial (I)

Case Temperature(Tc) -40àC to +85àC

Supply READ Voltages

+4.50V to +5.5V

(Functionality is guaranteed between these limits)

Stresses above those shown above may cause permanent damage to the device. This is a stress rating only and
operation above these specifications for extended periods may affect device reliability. Operation outside the

"OPERATING RANGES" shown above voids any and all warranty provisions.

DC CHARACTERISTICS FOR READ OPERATION

Symbol Parameter Min. Max. Unit Conditions

V
V
V
V
I
I
I
I
I

I

OH

OL

IH
IL

LI

LO

CC3

CC2

CC1

PP

Output High Voltage 2.4 V IOH = -0.4mA
Output Low Voltage 0.45 V IOL = 2.1mA
Input High Voltage 2.0

+0.5

V

CC

V

Input Low Voltage -0.3 0.8 V
Input Leakage Current -5 5 µAVIN = 0 to 5.5V
Output Leakage Current -10 10 µAV

= 0 to 5.5V

OUT

VCC Power -Down Current 10 µA CE= VCC ± 0.3V
VCC Standby Current 1.0 mA CE= V
VCC Active Current 30 mA CE= VIL, f=5MHz,

I

= 0mA

OUT

VPP Supply Current Read 100 µA CE= OE = VIL,

VPP = 5.5V

CAPACITANCE

Symbol Parameter Typ. Max. Unit Conditions

C

IN

C

OUT

C

VPP

Input Capacitance 8 12 pF VIN = 0V
Output Capacitance 8 12 pF V

OUT

= 0V

VPP Capacitance 18 25 pF VPP = 0V

IH

4800 Great America Parkway Ste 202 Tel: [phone]
Santa Clara, CA. 95054 Fax: [phone]

8

EN27C512

AC CHARACTERISTICS FOR READ OPERATION

EN27C512

-45 -55 -70 -90

Symbol Parameter Condition Min Max Min Max Min Max Min Max Unit

tACC (3) Address to

Output Delay

tCE (2) CEto Output

Delay

tOE (2, 3) OE to Output

Delay

tDF (4, 5) OE or CEHigh to Output Float,

whichever occurred first

tOH Output Hold from Address,

CEor OE , whichever occurred

first

CE= OE = V

OE = V

IL

OE = V

IL

IL

0000

45 55 70 90

45 55 70 90

25 25 30 35

20 20 25 25

ns

ns

ns

ns

ns

FIGURE 6. AC WAVEFORMS FOR READ OPERATION

ADDRESS ADDRESS VALID

CE

tCE

tOE

OE

OUTPUT

tACC

HIGH Z

OUTPUT

VALID

tDF

tOH

4800 Great America Parkway Ste 202 Tel: [phone]
Santa Clara, CA. 95054 Fax: [phone]

9

FIGURE 7. OUTPUT TEST WAVEFORMS AND MEASUREMENTS

45 and 55 devices:

EN27C512

AC

3.0V

DRIVING

LEVELS

0.0V

tR, tF < 5 ns (10% to 90%)

70 and 90 devices:

2.4V

AC

DRIVING

LEVELS

0.45V

tR, tF < 20 ns (10% to 90%)

1.5V

AC
MEASUREMENT
LEVEL

2.0

AC
MEASUREMENT
LEVEL

0.8

Output Test Load

1.3V

(1N914)

3.3K

OUTPUT

PIN

CL

Note: CL = 100pF including
jig capacitance, except for the

-45 and -55 devices, where
CL = 30pF.

DC PROGRAMMING CHARACTERISTICS

Test Limits

Symbol Parameter Conditions Min. Max Units

I

LI

V

IL

V

IH

V

OL

V

OH

I

CC2

I

PP2

V

ID

4800 Great America Parkway Ste 202 Tel: [phone]
Santa Clara, CA. 95054 Fax: [phone]

Input Load Current V

IN = VIL

, V

IH

5.0

Input Low Level -0.5 0.8 V
Input High Level 0.7 V
Output Low Voltage I
Output High Voltage

2.1 mA 0.45 V

OL =

I

OH =

-400 µA

2.4 V

VCC Supply Current

CC

V

+ 0.5 V

CC

40 mA

(Program and Verify)
V

Supply Current CE= PGM= V

PP

IL,

10 mA

A9 Product Identification Voltage 11.5 12.5 V

10

µA

EN27C512

FIGURE 8. PROGRAMMING WAVEFORMS

4800 Great America Parkway Ste 202 Tel: [phone]
Santa Clara, CA. 95054 Fax: [phone]

11

SWITCHING PROGRAMMING CHARACTERISTICS
(TA = + 25° C ± 5°C)

PARAMETER
SYMBOL
STANDARD PARAMETER DESCRIPTION

t

AS

t

OES

t

OEH

t

DS

t

AH

t

DH

t

DFP

t

PW

t

VCS

t

DV

t

VR OE

Address Setup Time 2

OE

/V

Setup Time 2 µs

PP

OE /VPP Hold Time 2 µs
Data Setup Time 2 µs
Address Hold Time 0 µs
Data Hold Time 2 µs
Output Enable to Output Float Delay 0 130 ns

PGMProgram Pulse Width 20 105
V

Setup Time 2

cc

Data Valid from

/V

Hold Time 2

PP

CE

EN27C512

Min. Max Units

µs

µs
µs

150

ns
µs

ORDERING INFORMATION

EN27C512 45 P I

TEMPERATURE RANGE

(Blank) = Commercial ( 0àC to +70àC)
I = Industrial ( -40àC to +85àC)

PACKAGE

P = 28 Plastic DIP
J = 32 Plastic PLCC
T = 28 Plastic TSOP

SPEED

45 = 45ns
55 = 55ns
70 = 70ns
90 = 90ns

BASE PART NUMBER

EN = EON Silicon Devices
27 = EPROM
C = CMOS
512 = 64K x 8

4800 Great America Parkway Ste 202 Tel: [phone]
Santa Clara, CA. 95054 Fax: [phone]

12