Stresses above these listed maximum ratings may cause
permanent damages to the device. Exposure beyond
specified operating conditions may affect device reliability
or cause malfunction.
Handling Procedures
This device has built-in protection against high static
Storage
temperature
T
store
-55
150
°C
voltages or electric fields; however, anti-static precautions
must be taken as for any other CMOS component. Unless
otherwise specified, proper operation can only occur when
Operating
temperature
T
op
-40
+85
°C
all terminal voltages are kept within the voltage range.
Unused inputs must always be tied to a defined logic
voltage level.
Soldering
TS
MAX
250
⋅10
°C⋅s
Temperature*Time
Electrical Characteristics
Operating Conditions (unless othewise specified)
Positive supply V
Negative supply
Ambient temperature
V
T =25°C
Sensor resistanceR
DD
SS
SEN
=3.0V
=0V
=300Ω to 10KΩ
Power Supply
ParameterSymbolConditionsMin.Typ.Max.Unit
Operating Voltage Range
Current Consumption
V
I
I
DD
DD1
DD2
T = -20°C to 70°C
CE =VDD at standby
CE =VSS at A/D conversion
=800kHz
f
ADOSC
2.2
100
3.0
0.2
240
3.6
1.0
300
Programmable Internal Oscillator
ParameterSymbolConditionsMin.Typ.Max.Unit
Frequency
Frequency Step Size
Stability Against Supply
f
ADOSC
∆f
ADOSC
∆f/f⋅∆V
D1,D0 = 00
2.2V< VDD <3.0V
DD
350
40
500
70
15
800
120
kHz/V
Voltage Variations
Stability Against
∆f/∆T
-20°C<T<70°C
-300
Hz/°C
Temperature Variations
V
µA
µA
kHz
kHz
Copyright 2002, EM Microelectronic-Marin SA
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EM6415
Sensor
ParameterSymbolConditionsMin.Typ.Max.Unit
Sensor Drive Current I
SDRV
R
RSEN1
=1.0kΩ , R
SEN
=4.0kΩ,
276300324
Program step 0
Mode S
R
RSEN1
=1.0kΩ , R
SEN
=4.0kΩ,
468510552
Program step 15
Mode S
Sensor Drive Current per
I
SDRV
/stp
R
RSEN1
=1.0kΩ , R
SEN
=4.0kΩ
101520
Step
Sensor Drive Current
vs Voltage Deviation
Sensor Bridge
I
R
SDRV
SEN1
/V
R
RSEN1
2.2V < VDD < 3.0V
R
RSEN1
=1.0kΩ , R
=1.3kΩ , I
SEN
SDRV
=4.0kΩ
=200µA
50200300ppm
2.73.74.2
Resistance1
Sensor Bridge
R
SEN2
R
RSEN2
=510Ω , I
SDRV
=500µA
1.01.52.0
Resistance2
RSEN1 Resistance R
RSEN2 Resistance R
RSEN1
RSEN2
0.32.5
0.32.5
A/D Converter
ParameterSymbolConditionsMin.Typ.Max.Unit
µA
µA
µA/stp
kΩ
kΩ
kΩ
kΩ
Input Voltage Range FS
Resolution
Integral Nonlinearity
Differential Nonlinearity
Conversion Time
Offset Adjust Range
FS Fine Ajust Range
V
SENS
RESADC
INLADC
DNLADC
TCONVAD
V
OFFAD
V
FSFAD
CH1,2,3,4H-CH1,2,3,4L
To resolve 14 bits ADC
f
=800kHz
ADOSC
=800kHz
f
ADOSC
f
=800kHz
ADOSC
=500kHz, 14bit
f
ADOSC
12 bit FS fine adjust
16
14
-60
-12.5
4
3
110
±40
200
+60
+12.5
mV
Bits
LSB
LSB
ms
mV
%FS
Copyright 2002, EM Microelectronic-Marin SA
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EM6415
DC Characteristics
ParameterSymbolConditionsMin.Typ.MaxUnit
Input Low Voltage
V
IL
ALE , RD , WR , CE , CLKP,
CLKSEL, D0-D3
Input High Voltage
V
IH
ALE , RD , WR , CE , CLKP,
CLKSEL, D0-D3
Input Low Current
I
IL
ALE , RD , WR , CE , CLKP,
CLKSEL, D0-D3
Input High Current
I
IH
ALE , RD , WR , CE , CLKP,
CLKSEL, D0 - D3
= 2mA, D0 –D3
I
Output Low Voltage
Output High Voltage
V
V
OL
OH
OL
= -1mA, D0 –D3
I
OH
Timing Characteristics
Data Write cycle
VDD = 3.0V, VSS = 0V, T = 25 °C, VOH = 0.8⋅VDD, VOL = 0.2⋅V
ItemSymbolMin.Typ.Max.Unit
Address Set-up TimeT
Address Hold TimeT
Data Set-up TimeT
Data Hold TimeT
ALE Pulse Width
WR Pulse Width
was
wah
wds
wdh
T
wap
T
wwp
0.8⋅V
DD
-20
1
1
0.1
2.4
DD
2.95
2025-ns
3035-ns
2025-ns
3035-ns
6065-ns
6065-ns
0.2⋅ V
20
0.4
DD
V
V
nA
nA
V
V
V
ALE
OH
V
OL
t
wap
WR
t
was
V
OH
D0-D3
V
OL
Copyright 2002, EM Microelectronic-Marin SA
Address
V
OH
V
t
wah
OL
t
wds
t
wdp
t
wdh
V
OH
Data
V
OL
Fig. 3
5www.emmicroelectronic.com
Data Read cycle
= 3.0V, VSS = 0V, T = 25 °C, VOH = 0.8⋅VDD, VOL = 0.2⋅V
V
DD
ItemSymbolMin.Typ.Max.Unit
Address Set-up TimeT
Address Hold TimeT
Data Set-up TimeT
Data Hold TimeT
ALE Pulse Width
RD Pulse Width
ras
rah
rds
rdh
T
rap
T
rrp
Timing Waveforms
EM6415
DD
100-ns
4045-ns
2025-ns
2025-ns
6065-ns
6065-ns
ALE
RD
D0-D3
V
OH
V
OL
t
ras
V
OH
V
OL
V
OH
t
rdp
t
rds
Address
V
OL
t
t
Data
rah
rdh
V
OH
V
OL
V
OH
V
OL
Fig. 4
Copyright 2002, EM Microelectronic-Marin SA
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EM6415
Functional Description
EM6415 comprises a four channel analog multiplexer followed by a fixed gain amplifier followed by the integrator of the dual
slope converter, a bandgap voltage reference, RC oscillator, power on/off detector.
The sensor is supplied directly by a programmable current source.
In order to minimize noise, the analog and digital circuits internal to EM6415 use separate power supplies. These power
buses are brought out to separate pins and should be tied together as close as possible to the device.
In addition, the output of the internal bandgap voltage reference is brought to the pin VREF, which could allow the
connection of an external capacitor to VSS, if the output stability is not enough to resolve 1µV/bit ADC.
For lowest ADC jitter, chose ramp height > 1.5V. To do so, run A/D ramp height conversion and read CC
(conversion complete, LAD8, Bit0). Lower the clock frequency until CC=0.
Note 8:Sensor bridge signal, e.g. pressure (CH1L – CH1H)
Note 9:Power supply voltage of EM6415 circuit
Copyright 2002, EM Microelectronic-Marin SA
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Integrator
This signal can be seen on pin CINT
EM6415
D
8Bit
AD
OFFSET ROUGH ADJUST
A
8Bit
FS ROUGH ADJUST
min. 1.5V for 14Bit at
3V power supply
0.720V
dV2
dV1
t1t2t3
12Bit
D
A
14Bit ADC OUTPUT
FS FINE ADJUST
Fig. 5 Integrator ramp
TimePhaseExecution
t1Autozero phaseSet up of integrator starting point
t 2FS fine adjustSignal integration with preprogrammed counter time length t2
t 3FS rough adjustDe-integration with preprogrammed reference voltage, time length of
t3 = ADC output counts
dV1 is the Offset Rough Adjust
dV2 is the Integrator Ramp Length
Offsets and other system mismatch such as the zero drift of operational amplifiers, long term instabilities or supply
voltage fluctuations are cancelled during the Autozero phase.
Sensitivity and full-scale range adjustments are done during rampup and rampdown of the dual slope integrator.
Copyright 2002, EM Microelectronic-Marin SA
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EM6415
Pad Description & Pin Assignment in SSOP36
PIN NrNameI/ODescription
10TS1Top of sensor1 bridge connection pin
11CH1HSensor1 channel high signal in
12CH1LSensor1 channel low signal in
13TS2Top of sensor2 bridge connection pin
14CH2HSensor2 channel high signal in
15CH2LSensor2 channel low signal in
16TS3Top of sensor3 bridge connection pin
17CH3HSensor3 channel high signal in
18CH3LSensor3 channel low signal in
19TS4Top of sensor4 bridge connection pin
20CH4HSensor4 channel high signal in
21CH4LSensor4 channel low signal in
2D0PI/OMicroprocessor Port Data 0
1D1PI/OMicroprocessor Port Data 1
36D2PI/OMicroprocessor Port Data 2
35D3PI/OMicroprocessor Port Data 3
31
32
33
34
22CINTConnection to integrator capacitor
23AZNConnection to auto-zero capacitor
24P3WAY3 way connection for integrator
25RINT13_14Connection of resistor for integrator
26RINT10Connection of resistor for integrator when 10 bit conversion used
8RSEN1Resistor to select sensor bridge1 maximum drive current
9RSEN2Resistor to select sensor bridge2 maximum drive current
3CLKPIExternal clock input
5CLKSELIInternal/external clock select
6VDDDPositive supply voltage of digital part
7VDDAPositive supply voltage of analog part
29VSSANegative supply voltage of analog part
30VSSDNegative supply voltage of digital part
27VREFOReference voltage
4, 28NCNot connected
RD
ALE
CE
WR
IRead strobe for BUS read (active low)
IAddress latch enable (active low)
The EM6415 has metal mask options for the Gain of the Input Amplifier (between 1 and 150 max) and for the Offset Adjust
Range. Contact EM Microelectronic for availability of different options not shown in table below. Please make sure to order
the exact Part Number when ordering.
V15Separate Registers-40mV to +40mV36-pin SSOP, Stick
V25Common Registers-40mV to +40mV36-pin SSOP, Stick
V3150Separate Registers-40mV to +40mV36-pin SSOP, Stick
V%customcustomcustom36-pin SSOP, Stick
Input
Amplifier
Gain
OS/FS Rough Adjust
(note 1)
for each sensor36 pin SSOP, Tape & Reel
for the 4 sensors36 pin SSOP, Tape & Reel
for each sensor36 pin SSOP, Tape & Reel
Offset Adjust
Range
Delivery Form
Sawn wafer, 11 mils thickness
Sawn wafer, 11 mils thickness
Sawn wafer, 11 mils thickness
Sawn wafer, 11 mils thickness
36 pin SSOP, Tape & Reel
Note 1: LAD 3, 4, 5, 6
For die size information and pad location diagram, please contact EM Microelectronic-Marin SA.
EM Microelectronic-Marin SA cannot assume responsibility for use of any circuitry described other than circuitry
entirely embodied in an EM Microelectronic-Marin SA product. EM Microelectronic-Marin SA reserves the right to
change the circuitry and specifications without notice at any time. You are strongly urged to ensure that the
information given has not been superseded by a more up-to-date version.