EM6415
Absolute Maximum Ratings
Parameter Symbol Min Max Unit
Supply Voltage
Voltage at
V
DD
V
PIN
V
-0.3
SS
-0.3
5.5
V
+0.3
DD
remaining pins
V
V
Stresses above these listed maximum ratings may cause
permanent damages to the device. Exposure beyond
specified operating conditions may affect device reliability
or cause malfunction.
Handling Procedures
This device has built-in protection against high static
Storage
temperature
T
store
-55
150
°C
voltages or electric fields; however, anti-static precautions
must be taken as for any other CMOS component. Unless
otherwise specified, proper operation can only occur when
Operating
temperature
T
op
-40
+85
°C
all terminal voltages are kept within the voltage range.
Unused inputs must always be tied to a defined logic
voltage level.
Soldering
TS
MAX
250
⋅10
°C⋅s
Temperature*Time
Electrical Characteristics
Operating Conditions (unless othewise specified)
Positive supply V
Negative supply
Ambient temperature
V
T = 25°C
Sensor resistance R
DD
SS
SEN
=3.0V
=0V
= 300Ω to 10KΩ
Power Supply
Parameter Symbol Conditions Min. Typ. Max. Unit
Operating Voltage Range
Current Consumption
V
I
I
DD
DD1
DD2
T = -20°C to 70°C
CE =VDD at standby
CE =VSS at A/D conversion
=800kHz
f
ADOSC
2.2
100
3.0
0.2
240
3.6
1.0
300
Programmable Internal Oscillator
Parameter Symbol Conditions Min. Typ. Max. Unit
Frequency
Frequency Step Size
Stability Against Supply
f
ADOSC
∆f
ADOSC
∆f/f⋅∆V
D1,D0 = 00
2.2V< VDD <3.0V
DD
350
40
500
70
15
800
120
kHz/V
Voltage Variations
Stability Against
∆f/∆T
-20°C<T<70°C
-300
Hz/°C
Temperature Variations
V
µA
µA
kHz
kHz
Copyright 2002, EM Microelectronic-Marin SA
3 www.emmicroelectronic.com
EM6415
Sensor
Parameter Symbol Conditions Min. Typ. Max. Unit
Sensor Drive Current I
SDRV
R
RSEN1
=1.0kΩ , R
SEN
=4.0kΩ,
276 300 324
Program step 0
Mode S
R
RSEN1
=1.0kΩ , R
SEN
=4.0kΩ,
468 510 552
Program step 15
Mode S
Sensor Drive Current per
I
SDRV
/stp
R
RSEN1
=1.0kΩ , R
SEN
=4.0kΩ
10 15 20
Step
Sensor Drive Current
vs Voltage Deviation
Sensor Bridge
I
R
SDRV
SEN1
/V
R
RSEN1
2.2V < VDD < 3.0V
R
RSEN1
=1.0kΩ , R
=1.3kΩ , I
SEN
SDRV
=4.0kΩ
=200µA
50 200 300 ppm
2.7 3.7 4.2
Resistance1
Sensor Bridge
R
SEN2
R
RSEN2
=510Ω , I
SDRV
=500µA
1.0 1.5 2.0
Resistance2
RSEN1 Resistance R
RSEN2 Resistance R
RSEN1
RSEN2
0.3 2.5
0.3 2.5
A/D Converter
Parameter Symbol Conditions Min. Typ. Max. Unit
µA
µA
µA/stp
kΩ
kΩ
kΩ
kΩ
Input Voltage Range FS
Resolution
Integral Nonlinearity
Differential Nonlinearity
Conversion Time
Offset Adjust Range
FS Fine Ajust Range
V
SENS
RESADC
INLADC
DNLADC
TCONVAD
V
OFFAD
V
FSFAD
CH1,2,3,4H-CH1,2,3,4L
To resolve 14 bits ADC
f
=800kHz
ADOSC
=800kHz
f
ADOSC
f
=800kHz
ADOSC
=500kHz, 14bit
f
ADOSC
12 bit FS fine adjust
16
14
-60
-12.5
4
3
110
±40
200
+60
+12.5
mV
Bits
LSB
LSB
ms
mV
%FS
Copyright 2002, EM Microelectronic-Marin SA
4 www.emmicroelectronic.com
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