EMLSI EM641FT8V Service Manual

EM641FT8V Series

Low Power, 512Kx8 SRAM

Document Title

512K x8 bit Low Power Full CMOS Static RAM

Revision History

Revision No. History Draft Date Remark

0.0 Initial Draft

0.1 0.1 Revision

I

Current from 1.5uA to 7uA

DR

tOE from 25nsec to 30nsec with 55ns part

Nov. 20, 2007 Preliminary

Dec. 5, 2007

Emerging Memory & Logic Solutions Inc.

4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Zip Code : 690-719
Tel : [phone] Fax : [phone]~1750 / Homepage : www.emlsi.com

The attached data sheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your
questions about device. If you have any questions, please contact the EMLSI office.

1

512K x8 Bit Low Power CMOS Static RAM

FEATURES

- Very high speed : 45ns

- Process Technology : 0.15um Full CMOS

- Organization : 512K x8

- Power Supply Voltage
=> EM641FT8V : 4.5V~5.5V

- Low Data Retention Voltage : 1.5V (MIN)

- Three state output and TTL Compatible

- Packaged product designed for 45/55/70ns

- Package Type: 32L-SOP

PRODUCT FAMILY

Product
Family

Operating
Temperature

Vcc Range Speed

EM641FT8V Series

Low Power, 512Kx8 SRAM

GENERAL DESCRIPTION

The EM641FT8V is fabricated by EMLSI’s advanced full
CMOS process technology. The families support industrial
temperature range and Chip Scale Package for user flexi­bility of system design. The families also supports low data
retention voltage for battery back-up operation with low
data retention current.
The EM641FT8V is available in KGD, JEDEC standard 32
pin 450mil Plastic SOP package.

Power Dissipation

Standby
(I

, Typ.)

SB1

Operating
(I

.Max)

CC1

PKG Type

EM641FT8V-45LF

EM641FT8V-55LF

EM641FT8V-70LF

PIN DESCRIPTION

A

18

A

16

A

14

A

12

A

7

A

6

A

5

A

4

A

3

A

2

A

1

A

0

I/O

0

I/O

1

I/O

2

V

SS

Industrial (-40 ~ 85oC)

Industrial (-40 ~ 85oC)

Industrial (-40 ~ 85oC)

EM641FT8V

1
2

3
4
5
6
7
8
9
10
11
12
13
14
15
16

32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17

V
A
A

WE
A

A
A

A
OE

A

CS
I/O
I/O
I/O
I/O

I/O

CC

15

17

13

8

9

11

10

7
6
5

4

3

4.5V~5.5V 45ns 1.5 µA 7mA 32-SOP

4.5V~5.5V 55ns 1.5 µA 7mA 32-SOP

4.5V~5.5V 70ns 1.5 µA 7mA 32-SOP

FUNCTIONAL BLOCK DIAGRAM

Pre-charge Circuit

A

0

A

1

A

2

A

3

A

4

A

5

A

6

A

7

A

8

A

9

A

10

I/O0 ~ I/O

Row Select

Data

7

Cont

Memory Array

512K x 8

I/O Circuit

Column Select

V

CC

V

SS

Name Function Name Function

CS Chip select input

OE Output Enable input

V

CC

V

SS

Power Supply

Ground

WE Write Enable input

A0~A

I/O

0

18

~I/O

Address Inputs

Data Inputs/Outputs

7

A

A

A

A

A

12

11

WE

OE

CS

Control Logic

A

A

A

15

14

13

16

17

18

2

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Minimum Unit

EM641FT8V Series

Low Power, 512Kx8 SRAM

Voltage on Any Pin Relative to V

Voltage on Vcc supply relative to V

SS

SS

Power Dissipation P

Operating Temperature T

Note : Stresses greater than those listed above “Absolute Maximum Ratings” may cause permanent damage to the device.
Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating condi­tions for extended periods may affect reliability.

VIN, V

V

CC

D

A

OUT

-0.5 to 6.0V V

-0.5 to 6.0V V

1.0 W

-40 to 85

o

C

FUNCTIONAL DESCRIPTION

CS OE WE I/O

H X X High-Z Deselected/ Power down Stand by

L L H Data Out Read Active

L X L Data In Write Active

L H H High-Z Selected, Output Disabled Active

Note : X means don’t care. (Must be low or high state)

0-7

Mode Power

3

RECOMMENDED DC OPERATING CONDITIONS

Parameter Symbol Min Typ Max Unit

Supply voltage

Ground V

Input high voltage V

Input low voltage V

2)

V

CC

SS

IH

IL

1)

4.5 - 5.5

0 0 0

2.2 - VCC + 0.5

4)

-0.5

Notes :

1. TA= -40 to 85oC, otherwise specified

2. Overshoot: VCC +1.0 V in case of pulse width < 20ns

3. Undershoot: -1.0 V in case of pulse width < 20ns

4. Overshoot and undershoot are sampled, not 100% tested.

CAPACITANCE (f =1MHz, TA=25oC)

Item Symbol Test Condition Min Max Unit

EM641FT8V Series

Low Power, 512Kx8 SRAM

V

V

3)

- 0.6 V

V

Input capacitance C

Input/Ouput capacitance C

IN

IO

VIN=0V - 8 pF

VIO=0V - 10 pF

Note : Capacitance is sampled, not 100% tested.

DC ELECTRICAL CHARACTERISTICS (TA = -40oC to +85oC)

Parameter Symbol Test Conditions Min Typ Max Unit

I

Input leakage current

Output leakage current

Operating power supply

Average operating current

Output low voltage

Output high voltage

Standby Current (TTL)

Standby Current (CMOS)

I

I

I

CC1

I

CC2

V

V

I

I

SB1

VIN=VSS to V

LI

CS=VIH or OE=V

LO

VIO=VSS to V

IIO=0mA, CS=VIL, VIN=VIH or V

CC

Cycle time=1µs, 100% duty, IIO=0mA,
CS<0.2V, VIN<0.2V or VIN>VCC-0.2V

Cycle time = Min, IIO=0mA, 100% duty,
CS=VIL, VIN=VIL or V

IOL = 2.1mA

OL

IOH = -1.0mA

OH

CS=VIH, Other inputs=VIH or V

SB

CS>VCC-0.2V

Other inputs = 0~VCC

(Typ. condition : VCC=5V @ 25oC)

(Max. condition : VCC=5.5V @ 85oC)

CC

CC

or WE=V

IH

IH

IL

IL

IL

-1 - 1 uA

-1 - 1 uA

- - 5 mA

- - 7 mA

45ns - - 65

70ns - - 45

- - 0.4 V

2.4 - - V

- - 1 mA

LF -

1.5

1)

20 uA

mA55ns - - 55

NOTES :

1.Typical values are measured at Vcc=5V, TA=25oC and not 100% tested.

4