EMLSI EM620FV8BS Service Manual

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EM620FV8BS Series

Low Power, 256Kx8 SRAM

Document Title

256K x8 bit Low Power and Low Voltage Full CMOS Static RAM

Revision History

Revision No. History Draft Date Remark

0.0 Initial Draft

0.1 0.1 Revision Revised VOH(2.2v to 2.4v),tOH(15ns to 10ns),

tOE-55(30ns to 25ns), tWP-55(45ns to 40ns),
tWP-70(55ns to 50ns), tWHZ-70(25ns to 20ns),
ICC(2mA to 3mA), ICC1(2mA to 3mA)

0.2 0.2 Revision VIH level change from 2.0V to 2.2V Aug. 16, 2007

0.3 0.3 Revision Fix typo error Nov. 13, 2007

June 28, 2007

July 2, 2007

Emerging Memory & Logic Solutions Inc.

4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Zip Code : 690-719
Tel : [phone] Fax : [phone]~1750 / Homepage : www.emlsi.com

The attached data sheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your
questions about device. If you have any questions, please contact the EMLSI office.

1

256K x8 Bit Low Power and Low Voltage CMOS Static RAM

FEATURES

GENERAL DESCRIPTION

EM620FV8BS Series

Low Power, 256Kx8 SRAM

- Process Technology : 0.15mm Full CMOS

- Organization :256K x8

- Power Supply Voltage
=> EM620FV8BS Series : 2.7V~3.6V

- Low Data Retention Voltage : 1.5V (MIN)

- Three state output and TTL Compatible

- Packaged product designed for 45/55/70ns

- Package Type: 32-sTSOP1

PRODUCT FAMILY

Product
Family

EM620FV8BS-45LF

EM620FV8BS-55LF

EM620FV8BS-70LF

Operating
Temperature

Industrial (-40 ~ 85oC)

Industrial (-40 ~ 85oC)

Industrial (-40 ~ 85oC)

PIN DESCRIPTION

The EM620FV8BS series are fabricated by EMLSI’s
advanced full CMOS process technology. The families
support industrial temperature range and Chip Scale Pack­age for user flexibility of system design. The families also
supports low data retention voltage for battery back-up
operation with low data retention current.
The EM620FV8BS series are available in KGD, JEDEC
standard 32 pin 8mm x 13.4mm sTSOP package.

Power Dissipation

Vcc Range Speed

Standby
(I

, Typ.)

SB1

Operating
(I

.Max)

CC1

PKG Type

2.7V~3.6V 45ns 1 µA 3mA 32-sTSOP

2.7V~3.6V 55ns 1 µA 3mA 32-sTSOP

2.7V~3.6V 70ns 1 µA 3mA 32-sTSOP

FUNCTIONAL BLOCK DIAGRAM

A11

A9
A8

A13

WE

CS2

A15

VCC

A17
A16
A14
A12

A7
A6
A5
A4

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16

EM620FV8BS-45LF

32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17

Name Function Name Function

CS1,CS2 Chip select inputs Vcc Power Supply

OE Output Enable input Vss Ground

WE Write Enable input NC No Connection

A0~A17 Address Inputs

OE
A10

CS1

I/O 7
I/O 6
I/O 5
I/O 4
I/O 3
VSS
I/O 2
I/O 1
I/O 0
A0
A1
A2

A3

CS1

CS2

WE

OE

A

0

A

1

A

2

A

3

A

4

A

5

A

6

A

7

A

8

A

9

I/O0 ~ I/O7

Control Logic

Data
Cont

Pre-charge Circuit

V

CC

V

Memory Array

Row Select

1024 x 2048

I/O Circuit

Column Select

A

A

A

11

10

12

A

A

A

A

A

14

13

15

16

17

SS

I/O0~I/O7 Data Inputs/Outputs

2

ABSOLUTE MAXIMUM RATINGS *

Parameter Symbol Minimum Unit

EM620FV8BS Series

Low Power, 256Kx8 SRAM

Voltage on Any Pin Relative to Vss VIN, V

Voltage on Vcc supply relative to Vss V

Power Dissipation P

Operating Temperature T

*

Stresses greater than those listed above “Absolute Maximum Ratings” may cause permanent damage to the device. Functional oper­ation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.

OUT

CC

D

A

-0.2 to 4.0V V

-0.2 to 4.0V V

1.0 W

-40 to 85

o

C

FUNCTIONAL DESCRIPTION

CS1 CS2 OE WE I/O

0-7

H X X X High-Z Deselected Stand by

X L X X High-Z Deselected Stand by

L H H H High-Z Output Disabled Active

L H L H Data Out Read Active

L H X L Data In Write Active

Mode Power

Note: X means don’t care. (Must be low or high state)

3

EM620FV8BS Series

Low Power, 256Kx8 SRAM

RECOMMENDED DC OPERATING CONDITIONS

1)

Parameter Symbol Min Typ Max Unit

Supply voltage V

Ground V

Input high voltage V

Input low voltage V

CC

SS

IH

IL

1. TA= -40 to 85oC, otherwise specified

2. Overshoot: V

CC

+2.0 V in case of pulse width < 20ns

3. Undershoot: -2.0 V in case of pulse width < 20ns

4. Overshoot and undershoot are sampled, not 100% tested

CAPACITANCE

1)

(f =1MHz, TA=25oC)

.

Item Symbol Test Condition Min Max Unit

Input capacitance C

Input/Ouput capacitance C

IN

IO

2.7 3.3 3.6

0 0 0

2.2 -

3)

-0.2

VIN=0V - 8 pF

VIO=0V - 10 pF

VCC + 0.2

2)

- 0.6 V

V

V

V

1. Capacitance is sampled, not 100% tested.

DC AND OPERATING CHARACTERISTICS

Parameter Symbol Test Conditions Min Typ Max Unit

I

Input leakage current

Output leakage current

Operating power supply

Average operating current

Output low voltage

Output high voltage

Standby Current (TTL)

Standby Current (CMOS)

I

LO

I

CC

I

CC1

I

CC2

V

V

I

SB

I

SB1

VIN=VSS to V

LI

CS1=VIH or CS2=VIL or OE=V
VIO=VSS to V

IIO=0mA, CS1=VIL, CS2=WE=VIH, VIN=VIH or V

Cycle time=1µs, 100% duty, IIO=0mA,
CS1<0.2V, CS2>VCC-0.2V,
VIN<0.2V or VIN>VCC-0.2V

Cycle time = Min, IIO=0mA, 100% duty,
CS1=VIL, CS2=V
VIN=VIL or V

IOL = 2.1mA

OL

IOH = -1.0mA

OH

CS1=VIH, CS2=VIL, Other inputs=VIH or V

CS1>VCC-0.2V, CS2>VCC-0.2V (CS1 controlled)

or 0V<CS2<0.2V (CS2 controlled),
Other inputs = 0~V

(Typ. condition : VCC=3.3V @ 25oC)

(Max. condition : V

CC

CC

IH,

IH

CC

=3.6V @ 85oC)

CC

or WE=V

IH

-1 - 1 uA

IL

IL

-1 - 1 uA

- - 3 mA

- - 3 mA

45ns - - 35

mA55ns - - 30

70ns - - 25

- - 0.4 V

2.4 - - V

IL

LF -

- - 0.3 mA

1)

1

10 uA

NOTES

1. Typical values are measured at Vcc=3.3V, TA=

25oC and not 100% tested.

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