EMLSI EM620FU8B Service Manual
EM620FU8B
Low Power, 256Kx8 SRAM
Document Title
256K x8 bit Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History Draft Date Remark
0.0 Initial Draft Oct. 31, 2007
0.1 0.1 Revision Fix typo error Nov. 16, 2007
Emerging Memory & Logic Solutions Inc.
4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Zip Code : 690-719
Tel : +82-64-740-1712 Fax : +82-64-740-1749~1750 / Homepage : www.emlsi.com
The attached data sheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your
questions about device. If you have any questions, please contact the EMLSI office.
1
256K x8 Bit Low Power and Low Voltage CMOS Static RAM
FEATURES
- Process Technology : 0.15µm Full CMOS
- Organization :256K x8
- Power Supply Voltage
=> EM620FU8B : 2.7~3.3V
- Low Data Retention Voltage : 1.5V
- Three state output and TTL Compatible
- Packaged product designed for 45/55/70ns
56
EM620FU8B
Low Power, 256Kx8 SRAM
EM620FU8B (Dual C/S)
29
GENERAL PHYSICAL SPECIFICATIONS
- Backside die surface of polished bare silicon
- Typical Die Thickness = 725um +/-15um
- Typical top-level metallization :
=> Metal (Ti/AlCu/TiN/ARC SiON/SiO2) : 5.2K Angstroms
- Topside Passivation :
=> Passivation (HDP/pNIT/PIQ) : 5.4K Angstroms
- Wafer diameter : 8 inch
PAD DESCRIPTIONS
Name Function Name Function
CS1,CS2 Chip select inputs Vcc Power Supply
OE Output Enable input Vss Ground
WE Write Enable input NC No Connection
A0~A17 Address Inputs
I/O0~I/O7 Data Inputs/Outputs
y
x
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
I/O0 ~ I/O7
EMLSI LOGO
+
(0.0)
281
Pre-charge Circuit
V
CC
V
SS
Data
Cont
Memory Array
1024 x 2048
Row Select
I/O Circuit
Column Select
A
A
A
A
A
A
14
13
12
15
16
17
WE
CS1
CS2
A
A
11
10
OE
Control Logic
BONDING INSTRUCTIONS
The 2M full CMOS SRAM die has total 56pads. Refer to the bond pad location and identification table for X, Y coordinates.
EMLSI recommends using a bond wire on back side of die onto Vss bond pad for improved noise immunity.
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ABSOLUTE MAXIMUM RATINGS *
Parameter Symbol Minimum Unit
EM620FU8B
Low Power, 256Kx8 SRAM
Voltage on Any Pin Relative to Vss VIN, V
Voltage on Vcc supply relative to Vss V
Power Dissipation P
Operating Temperature T
*
Stresses greater than those listed above “Absolute Maximum Ratings” may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
OUT
CC
D
A
-0.2 to 4.0V V
-0.2 to 4.0V V
1.0 W
-40 to 85
o
C
FUNCTIONAL DESCRIPTION
CS1 CS2 OE WE I/O
0-7
H X X X High-Z Deselected Stand by
X L X X High-Z Deselected Stand by
L H H H High-Z Output Disabled Active
L H L H Data Out Read Active
L H X L Data In Write Active
Mode Power
Note: X means don’t care. (Must be low or high state)
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