ELPIDA MC-4R64FKE8D-653, MC-4R64FKE8D-745, MC-4R64FKE8D-845 Datasheet
DATA SHEET
MOS INTEGRATED CIRCUIT
MC-4R64FKE8D
Direct Rambus DRAM RIMMTM Module
64M-BYTE (32M-WORD x 18-BIT)
Description
The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for
use in a broad range of applications including computer memory, personal computers, workstations, and other
applications where high bandwidth and low latency are required.
MC-4R64FKE8D modules consists of two 288M Direct Rambus DRAM (Direct RDRAM) devices (
These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling
Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using conventional system and
board design technologies.
Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).
The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous,
randomly addressed memory transactions. The separate control and data buses with independent row and column
control yield over 95 % bus efficiency. The Direct RDRAM's 32 banks support up to four simultaneous transactions
per device.
Features
PD488588).
µ
• 184 edge connector pads with 1mm pad spacing
• 64 MB Direct RDRAM storage
• Each RDRAM
• Gold plated contacts
• RDRAMs use Chip Scale Package (CSP)
• Serial Presence Detect support
• Operates from a 2.5 V supply
• Powerdown self refresh modes
• Separate Row and Column buses for higher efficiency
• Over Drive Factor (ODF) support
Document No. E0080N20 (Ver 2.0)
Date Published June 2002 (K) Japan
URL: http://www.elpida.com
has 32 banks, for 64 banks total on module
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for
availability and additional information.
NEC Corporation. 2000
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
Elpida Memory, Inc. 2001-2002
Order information
MC-4R64FKE8D
Part number Organization I/O Freq.
MHz
MC-4R64FKE8D - 845 32M x 18 800 45 184 edge connector pads RIMM 2 pieces of
MC-4R64FKE8D - 745 711 45 with heat spreader
MC-4R64FKE8D - 653 600 53 Edge connector : Gold plated FBGA (µBGA) package
RAS access time
ns
Package Mounted devices
PD488588FF
µ
2
Data Sheet E0080N20 (Ver 2.0)
Module Pad Configuration
MC-4R64FKE8D
B10
B11
B12
B13
B14
B15
B16
B17
B18
B19
B20
B21
B22
B23
B24
B25
B26
B27
B28
B29
B30
B31
B32
B33
B34
B35
B36
B37
B38
B39
B40
B41
B42
B43
B44
B45
B46
B1
B2
B3
B4
B5
B6
B7
B8
B9
GND
LDQA7
GND
LDQA5
GND
LDQA3
GND
LDQA1
GND
LCFM
GND
LCFMN
GND
NC
GND
LROW2
GND
LROW0
GND
LCOL3
GND
LCOL1
GND
LDQB0
GND
LDQB2
GND
LDQB4
GND
LDQB6
GND
LDQB8
GND
LCMD
CMOS
V
SIN
CMOS
V
NC
GND
NC
DD
V
V
DD
NC
NC
NC
NC
GND
LDQA8
GND
LDQA6
GND
LDQA4
GND
LDQA2
GND
LDQA0
GND
LCTMN
GND
LCTM
GND
NC
GND
LROW1
GND
LCOL4
GND
LCOL2
GND
LCOL0
GND
LDQB1
GND
LDQB3
GND
LDQB5
GND
LDQB7
GND
LSCK
V
CMOS
SOUT
V
CMOS
NC
GND
NC
V
V
NC
NC
NC
NC
DD
DD
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
A18
A19
A20
A21
A22
A23
A24
A25
A26
A27
A28
A29
A30
A31
A32
A33
A34
A35
A36
A37
A38
A39
A40
A41
A42
A43
A44
A45
A46
Side B Side A
B47
B48
B49
B50
B51
B52
B53
B54
B55
B56
B57
B58
B59
B60
B61
B62
B63
B64
B65
B66
B67
B68
B69
B70
B71
B72
B73
B74
B75
B76
B77
B78
B79
B80
B81
B82
B83
B84
B85
B86
B87
B88
B89
B90
B91
B92
NC
NC
NC
NC
V
REF
GND
SA0
V
DD
SA1
SV
DD
SA2
V
DD
RCMD
GND
RDQB8
GND
RDQB6
GND
RDQB4
GND
RDQB2
GND
RDQB0
GND
RCOL1
GND
RCOL3
GND
RROW0
GND
RROW2
GND
NC
GND
RCFMN
GND
RCFM
GND
RDQA1
GND
RDQA3
GND
RDQA5
GND
RDQA7
GND
NC
NC
NC
NC
V
REF
GND
SCL
V
SDA
SV
SWP
V
RSCK
GND
RDQB7
GND
RDQB5
GND
RDQB3
GND
RDQB1
GND
RCOL0
GND
RCOL2
GND
RCOL4
GND
RROW1
GND
NC
GND
RCTM
GND
RCTMN
GND
RDQA0
GND
RDQA2
GND
RDQA4
GND
RDQA6
GND
RDQA8
GND
A47
A48
A49
A50
A51
A52
A53
DD
DD
DD
A54
A55
A56
A57
A58
A59
A60
A61
A62
A63
A64
A65
A66
A67
A68
A69
A70
A71
A72
A73
A74
A75
A76
A77
A78
A79
A80
A81
A82
A83
A84
A85
A86
A87
A88
A89
A90
A91
A92
LCFM, LCFMN,
RCFM, RCFMN : Clock from master
LCTM, LCTMN,
RCTM, RCTMN : Clock to master
LCMD, RCMD : Serial Command Pad
LROW2 - LROW0,
RROW2 - RROW0 : Row bus
LCOL4 - LCOL0,
RCOL4 - RCOL0 : Column bus
LDQA8 - LDQA0,
RDQA8 - RDQA0 : Data bus A
LDQB8 - LDQB0,
RDQB8 - RDQB0 : Data bus B
LSCK, RSCK : Clock input
SA0 - SA2 : Serial Presence Detect Address
SCL, SDA : Serial Presence Detect Clock
SIN, SOUT : Serial I/O
SVDD : SPD Voltage
SWP : Serial Presence Detect Write Protect
V
: Supply voltage for serial pads
CMOS
VDD : Supply voltage
V
: Logic threshold
REF
GND : Ground reference
NC : These pads are not connected
Data Sheet E0080N20 (Ver 2.0)
3
MC-4R64FKE8D
Module Pad Names
Pad Signal Name Pad Signal Name Pad Signal Name Pad Signal Name
A1 GND B1 GND A47 NC B47 NC
A2 LDQA8 B2 LDQA7 A48 NC B48 NC
A3 GND B3 GND A49 NC B49 NC
A4 LDQA6 B4 LDQA5 A50 NC B50 NC
A5 GND B5 GND A51 V
A6 LDQA4 B6 LDQA3 A52 GND B52 GND
A7 GND B7 GND A53 SCL B53 SA0
A8 LDQA2 B8 LDQA1 A54 VDD B54 VDD
A9 GND B9 GND A55 SDA B55 SA1
A10 LDQA0 B10 LCFM A56 SVDD B56 SVDD
A11 GND B11 GND A57 SWP B57 SA2
A12 LCTMN B12 LCFMN A58 VDD B58 VDD
A13 GND B13 GND A59 RSCK B59 RCMD
A14 LCTM B14 NC A60 GND B60 GND
A15 GND B15 GND A61 RDQB7 B61 RDQB8
A16 NC B16 LROW2 A62 GND B62 GND
A17 GND B17 GND A63 RDQB5 B63 RDQB6
A18 LROW1 B18 LROW0 A64 GND B64 GND
A19 GND B19 GND A65 RDQB3 B65 RDQB4
A20 LCOL4 B20 LCOL3 A66 GND B66 GND
A21 GND B21 GND A67 RDQB1 B67 RDQB2
A22 LCOL2 B22 LCOL1 A68 GND B68 GND
A23 GND B23 GND A69 RCOL0 B69 RDQB0
A24 LCOL0 B24 LDQB0 A70 GND B70 GND
A25 GND B25 GND A71 RCOL2 B71 RCOL1
A26 LDQB1 B26 LDQB2 A72 GND B72 GND
A27 GND B27 GND A73 RCOL4 B73 RCOL3
A28 LDQB3 B28 LDQB4 A74 GND B74 GND
A29 GND B29 GND A75 RROW1 B75 RROW0
A30 LDQB5 B30 LDQB6 A76 GND B76 GND
A31 GND B31 GND A77 NC B77 RROW2
A32 LDQB7 B32 LDQB8 A78 GND B78 GND
A33 GND B33 GND A79 RCTM B79 NC
A34 LSCK B34 LCMD A80 GND B80 GND
A35 V
CMOS
B35 V
CMOS
A81 RCTMN B81 RCFMN
A36 SOUT B36 SIN A82 GND B82 GND
A37 V
CMOS
B37 V
CMOS
A83 RDQA0 B83 RCFM
A38 NC B38 NC A84 GND B84 GND
A39 GND B39 GND A85 RDQA2 B85 RDQA1
A40 NC B40 NC A86 GND B86 GND
A41 VDD B41 VDD A87 RDQA4 B87 RDQA3
A42 VDD B42 VDD A88 GND B88 GND
A43 NC B43 NC A89 RDQA6 B89 RDQA5
A44 NC B44 NC A90 GND B90 GND
A45 NC B45 NC A91 RDQA8 B91 RDQA7
A46 NC B46 NC A92 GND B92 GND
REF
B51 V
REF
4
Data Sheet E0080N20 (Ver 2.0)
MC-4R64FKE8D
Module Connector Pad Description (1/2)
Signal I/O Type Description
GND – – Ground reference for RDRAM core and interface. 72 PCB connector pads.
LCFM I RSL Clock from master. Interface clock used for receiving RSL signals from the
Channel. Positive polarity.
LCFMN I RSL Clock from master. Interface clock used for receiving RSL signals from the
Channel. Negative polarity.
LCMD I V
LCOL4..LCOL0 I RSL Column bus. 5-bit bus containing control and address information for column
LCTM I RSL Clock to master. Interface clock used for transmitting RSL signals to the
LCTMN I RSL Clock to master. Interface clock used for transmitting RSL signals to the
LDQA8..LDQA0 I/O RSL Data bus A. A 9-bit bus carrying a byte of read or write data between the Channel
LDQB8..LDQB0 I/O RSL Data bus B. A 9-bit bus carrying a byte of read or write data between the Channel
LROW2..LROW0 I RSL Row bus. 3-bit bus containing control and address information for row accesses.
LSCK I V
NC – – These pads are not connected. These 24 connector pads are reserved for future
RCFM I RSL Clock from master. Interface clock used for receiving RSL signals from the
RCFMN I RSL Clock from master. Interface clock used for receiving RSL signals from the
RCMD I V
RCOL4..RCOL0 I RSL Column bus. 5-bit bus containing control and address information for column
RCTM I RSL Clock to master. Interface clock used for transmitting RSL signals to the
RCTMN I RSL Clock to master. Interface clock used for transmitting RSL signals to the
RDQA8..RDQA0 I/O RSL Data bus A. A 9-bit bus carrying a byte of read or write data between the Channel
RDQB8..RDQB0 I/O RSL Data bus B. A 9-bit bus carrying a byte of read or write data between the Channel
RROW2..RROW0 I RSL Row bus. 3-bit bus containing control and address information for row accesses.
Serial Command used to read from and write to the control registers. Also used
CMOS
for power management.
accesses.
Channel. Positive polarity.
Channel. Negative polarity.
and the RDRAM. LDQA8 is non-functional on modules with x16 RDRAM devices.
and the RDRAM. LDQB8 is non-functional on modules with x16 RDRAM devices.
Serial clock input. Clock source used to read from and write to the RDRAM
CMOS
control registers.
use.
Channel. Positive polarity.
Channel. Negative polarity.
Serial Command Input used to read from and write to the control registers. Also
CMOS
used for power management.
accesses.
Channel. Positive polarity.
Channel. Negative polarity.
and the RDRAM. RDQA8 is non-functional on modules with x16 RDRAM devices.
and the RDRAM. RDQB8 is non-functional on modules with x16 RDRAM devices.
Data Sheet E0080N20 (Ver 2.0)
5
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