ELPIDA MC-4R128FKE6D-653, MC-4R128FKE6D-745, MC-4R128FKE6D-845 Datasheet

DATA SHEET

MOS INTEGRA TED CIRCUIT

MC-4R128FKE6D

Direct Rambus DRAM RIMMTM Module

128M-BYTE (64M-WORD x 16-BIT)

Description

The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required.

MC-4R128FKE6D modules consists of four 288M Direct Rambus DRAM (Direct RDRAM) devices ( These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using conventional system and board design technologies.

Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).

The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous, randomly addressed memory transactions. The separate control and data buses with independent row and column control yield over 95 % bus efficiency. The Direct RDRAM's 32 banks support up to four simultaneous transactions per device.

Features

PD488588).

• 184 edge connector pads with 1mm pad spacing

• 128 MB Direct RDRAM storage



• Each RDRAM

• Gold plated contacts

• RDRAMs use Chip Scale Package (CSP)

• Serial Presence Detect support

• Operates from a 2.5 V supply

• Powerdown self refresh modes

• Separate Row and Column buses for higher efficiency

• Over Drive Factor (ODF) support

Document No. E0093N20 (Ver. 2.0) Date Published June 2002 (K) Japan URL: http://www.elpida.com

has 32 banks, for 128 banks total on module

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for availability and additional information.

Elpida Memory, Inc. i s a joint venture DRAM company of NEC Corporati on and Hi tachi, Ltd.

Elpida Memory,Inc. 2001-2002



Order information

MC-4R128FKE6D

Part number Organization I/O Freq.

MHz

MC-4R128FKE6D - 845 64M x 16 800 45 184 edge connector pads RIMM 4 pieces of MC-4R128FKE6D - 745 711 45 with heat spreader MC-4R128FKE6D - 653 600 53 Edge connector : Gold plated FBGA (µBGA) package

RAS access time

Package Mounted devices

PD488588FF

Data Sheet

E0093N20 (Ver. 2.0)

Module Pad Configuration

MC-4R128FKE6D

B10 B11 B12 B13 B14 B15 B16 B17 B18 B19 B20 B21 B22 B23 B24 B25 B26 B27 B28 B29 B30 B31 B32 B33 B34 B35 B36 B37 B38 B39 B40 B41 B42 B43 B44 B45 B46

B1 B2 B3 B4 B5 B6 B7 B8 B9

GND LDQA7 GND LDQA5 GND LDQA3 GND LDQA1 GND LCFM GND LCFMN GND NC GND LROW2 GND LROW0 GND LCOL3 GND LCOL1 GND LDQB0 GND LDQB2 GND LDQB4 GND LDQB6 GND LDQB8 GND LCMD

CMOS

V SIN

CMOS

V NC GND NC

V V

NC NC NC NC

GND

LDQA8

GND

LDQA6

GND

LDQA4

GND

LDQA2

GND

LDQA0

GND

LCTMN

GND

LCTM

GND

LROW1

GND

LCOL4

GND

LCOL2

GND

LCOL0

GND

LDQB1

GND

LDQB3

GND

LDQB5

GND

LDQB7

GND

LSCK

CMOS

SOUT V

CMOS

GND

NC V V

DD DD

A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 A20 A21 A22 A23 A24 A25 A26 A27 A28 A29 A30 A31 A32 A33 A34 A35 A36 A37 A38 A39 A40 A41 A42 A43 A44 A45 A46

Side B Side A

B47 B48 B49 B50 B51 B52 B53 B54 B55 B56 B57 B58 B59 B60 B61 B62 B63 B64 B65 B66 B67 B68 B69 B70 B71 B72 B73 B74 B75 B76 B77 B78 B79 B80 B81 B82 B83 B84 B85 B86 B87 B88 B89 B90 B91 B92

NC NC NC NC V

REF

GND SA0 V

SA1 SV

SA2 V

RCMD GND RDQB8 GND RDQB6 GND RDQB4 GND RDQB2 GND RDQB0 GND RCOL1 GND RCOL3 GND RROW0 GND RROW2 GND NC GND RCFMN GND RCFM GND RDQA1 GND RDQA3 GND RDQA5 GND RDQA7 GND

REF

GND

SCL

SDA

SWP

RSCK

GND

RDQB7

GND

RDQB5

GND

RDQB3

GND

RDQB1

GND

RCOL0

GND

RCOL2

GND

RCOL4

GND

RROW1

GND

RCTM

GND

RCTMN

GND

RDQA0

GND

RDQA2

GND

RDQA4

GND

RDQA6

GND

RDQA8

GND

A47 A48 A49 A50 A51 A52 A53

A54 A55 A56 A57 A58 A59 A60 A61 A62 A63 A64 A65 A66 A67 A68 A69 A70 A71 A72 A73 A74 A75 A76 A77 A78 A79 A80 A81 A82 A83 A84 A85 A86 A87 A88 A89 A90 A91 A92

LCFM, LCFMN, RCFM, RCFMN : Clock from master LCTM, LCTMN, RCTM, RCTMN : Clock to master LCMD, RCMD : Serial Command Pad LROW2 - LROW0, RROW2 - RROW0 : Row bus LCOL4 - LCOL0, RCOL4 - RCOL0 : Column bus LDQA8 - LDQA0, RDQA8 - RDQA0 : Data bus A LDQB8 - LDQB0, RDQB8 - RDQB0 : Data bus B LSCK, RSCK : Clock input SA0 - SA2 : Serial Presence Detect Address SCL, SDA : Serial Presence Detect Clock SIN, SOUT : Serial I/O SVDD : SPD Voltage SWP : Serial Presence Detect Write Protect V

: Supply voltage for serial pads

CMOS

VDD : Supply voltage V

: Logic threshold

REF

GND : Ground reference NC : These pads are not connected

Data Sheet

E0093N20 (Ver. 2.0)

MC-4R128FKE6D

Module Pad Names

Pad Signal Name Pad Signal Name Pad Signal Name Pad Signal Name

A1 GND B1 GND A47 NC B47 NC A2 LDQA8 B2 LDQA7 A48 NC B48 NC A3 GND B3 GND A49 NC B49 NC A4 LDQA6 B4 LDQA5 A50 NC B50 NC A5 GND B5 GND A51 V

REF

B51 V A6 LDQA4 B6 LDQA3 A52 GND B52 GND A7 GND B7 GND A53 SCL B53 SA0 A8 LDQA2 B8 LDQA1 A54 VDD B54 VDD A9 GND B9 GND A55 SDA B55 SA1

A10 LDQA0 B10 LCFM A56 SVDD B56 SVDD A11 GND B11 GND A57 SWP B57 SA2 A12 LCTMN B12 LCFMN A58 VDD B58 VDD A13 GND B13 GND A59 RSCK B59 RCMD A14 LCTM B14 NC A60 GND B60 GND A15 GND B15 GND A61 RDQB7 B61 RDQB8 A16 NC B16 LROW2 A62 GND B62 GND A17 GND B17 GND A63 RDQB5 B63 RDQB6 A18 LROW1 B18 LROW0 A64 GND B64 GND A19 GND B19 GND A65 RDQB3 B65 RDQB4 A20 LCOL4 B20 LCOL3 A66 GND B66 GND A21 GND B21 GND A67 RDQB1 B67 RDQB2 A22 LCOL2 B22 LCOL1 A68 GND B68 GND A23 GND B23 GND A69 RCOL0 B69 RDQB0 A24 LCOL0 B24 LDQB0 A70 GND B70 GND A25 GND B25 GND A71 RCOL2 B71 RCOL1 A26 LDQB1 B26 LDQB2 A72 GND B72 GND A27 GND B27 GND A73 RCOL4 B73 RCOL3 A28 LDQB3 B28 LDQB4 A74 GND B74 GND A29 GND B29 GND A75 RROW1 B75 RROW0 A30 LDQB5 B30 LDQB6 A76 GND B76 GND A31 GND B31 GND A77 NC B77 RROW2 A32 LDQB7 B32 LDQB8 A78 GND B78 GND A33 GND B33 GND A79 RCTM B79 NC A34 LSCK B34 LCMD A80 GND B80 GND A35 V

CMOS

B35 V

CMOS

A81 RCTMN B81 RCFMN A36 SOUT B36 SIN A82 GND B82 GND A37 V

CMOS

B37 V

CMOS

A83 RDQA0 B83 RCFM A38 NC B38 NC A84 GND B84 GND A39 GND B39 GND A85 RDQA2 B85 RDQA1 A40 NC B40 NC A86 GND B86 GND A41 VDD B41 VDD A87 RDQA4 B87 RDQA3 A42 VDD B42 VDD A88 GND B88 GND A43 NC B43 NC A89 RDQA6 B89 RDQA5 A44 NC B44 NC A90 GND B90 GND A45 NC B45 NC A91 RDQA8 B91 RDQA7 A46 NC B46 NC A92 GND B92 GND

REF

Data Sheet

E0093N20 (Ver. 2.0)

MC-4R128FKE6D

Module Connector Pad Description (1/2)

Signal I/O Type Description GND – – Ground reference for RDRAM core and interface. 72 P CB connector pads. LCFM I RSL Clock from master. Interface clock used for receiving RSL si gnal s from the

Channel. Positive polarit y.

LCFMN I RSL Clock from master. Interface clock used for receiving RSL si gnal s from the

Channel. Negative polarity.

LCMD I V

LCOL4..LCOL0 I RSL Column bus. 5-bit bus containing control and addres s information for column

LCTM I RSL Clock to master. Interface cl ock used for transmitti ng RS L signals to the

LCTMN I RSL Clock to master. Interface cl ock used for transmitti ng RS L signals to the

LDQA8..LDQA0 I/O RSL Data bus A. A 9-bit bus c arryi ng a byte of read or write data between the Channel

LDQB8..LDQB0 I/O RSL Data bus B. A 9-bit bus c arryi ng a byte of read or write data between the Channel

LROW2..LROW0 I RSL Row bus. 3-bit bus containing control and address inform ation for row accesses. LSCK I V

NC – – These pads are not connected. These 24 connector pads are reserved for future

RCFM I RSL Clock from master. Interface clock used for receiving RSL signals from the

RCFMN I RSL Clock from master. Interface cloc k used for receiving RSL signals from the

RCMD I V

RCOL4..RCOL0 I RSL Column bus. 5-bit bus containing control and address inf ormation for column

RCTM I RSL Clock to m aster. Interface clock us ed for transmitting RSL signals to the

RCTMN I RSL Clock to m aster. Interface clock used for transmitting RSL si gnal s to the

RDQA8..RDQA0 I/O RSL Data bus A. A 9-bit bus carrying a byte of read or write data between the Channel

RDQB8..RDQB0 I/O RSL Data bus B. A 9-bit bus carrying a byte of read or write data between the Channel

RROW2..RROW0 I RSL Row bus. 3-bit bus containing control and address information for row accesses.

Serial Command used t o read from and write to the control registers. Also used

CMOS

for power management.

accesses.

Channel. Positive polarit y.

Channel. Negative polarity.

and the RDRAM. LDQA8 is non-functi onal on modules with x16 RDRAM devices.

and the RDRAM. LDQB8 is non-functi onal on modules with x16 RDRAM devices.

Serial clock input. Clock source used to read from and write to the RDRAM

CMOS

control registers.

use.

Channel. Positive polarit y.

Channel. Negative polarity.

Serial Command Input used to read from and write to the control registers. Also

CMOS

used for power management.

accesses.

Channel. Positive polarit y.

Channel. Negative polarity.

and the RDRAM. RDQA8 is non-functi onal on modules with x16 RDRAM devices.

and the RDRAM. RDQB8 is non-functi onal on modules with x16 RDRAM devices.

Data Sheet

E0093N20 (Ver. 2.0)

+ 9 hidden pages

ELPIDA MC-4R128FKE6D-653, MC-4R128FKE6D-745, MC-4R128FKE6D-845 Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual

Description

Features

Order information

Module Pad Configuration

Module Pad Names

Module Connector Pad Description (1/2)