ELANT ELH0101K-883B, ELH0101AK-883B Datasheet

ELH0101/883/8508901/2YX December 1994 Rev H

ELH0101/883/8508901/2YX

Power Operational Amplifier

Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a ‘‘controlled document’’. Current revisions, if any, to these
specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation. Patent pending.

©

1985 Elantec, Inc.

Features

# 5A peak, 2A continuous output

current

# 10 V/ms slew rate
# 300 kHz power bandwidth
# 850 mW standby power (

g

15V

supplies)

# 300 pA input bias current
# Virtually no crossover distortion
# 2 ms settling time to 0.01%
# 5 MHz gain bandwidth
# MIL-STD-883 devices 100%

manufactured in U.S.A.

Ordering Information

Part No. Temp. Range Package Outline

Ý

ELH0101AK/883Bb55§Ctoa125§C TO-3 MDP0003

ELH0101K/883Bb55§Ctoa125§C TO-3 MDP0003

8508901YX and 8508902YX are the SMD
versions of this device.

Connection Diagram

0101– 1

Top View

Note: Electrically connected internally.
No connection should be made to pin.

General Description

The ELH0101 is a wideband power operational amplifier featur­ing FET inputs, internal compensation, virtually no crossover
distortion, and rapid settling time. These features make the
ELH0101 an ideal choice for DC or AC servo amplifiers, deflec­tion yoke drivers, programmable power supplies, and disk head
positioner amplifiers.

Elantec facilities comply with MIL-I-45208A and other applica­ble quality specifications. Elantec’s Military devices are 100%
fabricated and assembled in our rigidly controlled, ultra-clean
facilities in Milpitas, California. For additional information on
Elantec’s Quality and Reliability Assurance policy and proce­dures request brochure QRA-1.

Equivalent Schematic

0101– 2

TABWIDE

ELH0101/883/8508901/2YX

Power Operational Amplifier

Absolute Maximum Ratings

V

S

Supply Voltage

ELH0101, ELH0101A

g

22V

P

D

Power Dissipation at T

A

e

25§C5W

Derate linearly at 25

§

C/W

to zero at 150

§

C

P

D

Power Dissipation at T

C

e

25§C 62W

Derate linearly at 2

§

C/W

to zero at 150

§

C

Differential Input Voltage

ELH0101, ELH0101A

g

40V but

k

g

V

S

VINInput Voltage Range

ELH0101, ELH0101A

g

20V but

k

g

V

S

Peak Output Current (50 ms pulse) 5A
Output Short Circuit Duration

(within rated power dissipation,
R

SC

e

0.35X,T

A

e

25§C) Continuous

T

A

Operating Temperature Range:

ELH0101, ELH0101A

b

55§Ctoa125§C

T

J

Maximum Junction Temperature 150§C

T

ST

Storage Temperature

b

65§Ctoa150§C

Lead Temperature

(Soldering, 10 seconds) 300

§

C

Important Note:
All parameters having Min/Max specifications are guaranteed. The Test Level column indicates the specific device testing actually
performed during production and Quality inspection. Elantec performs most electrical tests using modern high-speed automatic test
equipment, specifically the LTX77 Series system. Unless otherwise noted, all tests are pulsed tests, therefore T

J

e

T

C

e

TA.

Test Level Test Procedure

I 100% production tested and QA sample tested per QA test plan QCX0002.

II 100% production tested at T

A

e

25§C and QA sample tested at T

A

e

25§C,

T

MAX

and T

MIN

per QA test plan QCX0002.

III QA sample tested per QA test plan QCX0002.
IV Parameter is guaranteed (but not tested) by Design and Characterization Data.

V Parameter is typical value at T

A

e

25§C for information purposes only.

DC Electrical Characteristics

(Note 1) V

S

e

g

15V, T

A

e

25§C, V

CM

e

0V

Parameter Description Test Conditions

ELH0101 ELH0101A

Level

Test

Units

Min Typ Max Min Typ Max

V

OS

Input Offset 1 10 1 3 I mV
Voltage

T

MIN

s

T

A

s

T

MAX

,

15 7 I mV

ELH0101

DVOS/DPDChange in Input (Note 2)

Offset Voltage with 150 150 V mV/W
Dissipated Power

DVOS/DT Change in Input

Offset Voltage with 10 10 V mV/

§

C

Temperature

I

B

Input Bias Current 1,000 300 I pA

T

A

s

T

MAX

,

1,000 300 I nA

ELH0101

2

TDis 2.3in

ELH0101/883/8508901/2YX

Power Operational Amplifier

DC Electrical Characteristics

(Note 1) V

S

e

g

15V, T

A

e

25§C, V

CM

e

0V Ð Contd.

Parameter Description Test Conditions

ELH0101 ELH0101A

Level

Test

Units

Min Typ Max Min Typ Max

I

OS

Input Offset 250 75 I pA
Current

T

A

s

T

MAX

,

250 75 I nA

ELH0101, A

A

VOL

Large Signal V

O

e

g

10V, R

L

e

10X

50 200 50 200 I V/mV

Voltage Gain

V

O

Output Voltage R

SC

e

0X,A

V

e

1,

g

11.7g12.5

g

11.7g12.5 I V

Swing R

L

e

100X (Note 3)

R

SC

e

0X,A

V

e

1,

g11g

11.6

g11g

11.6 I V

R

L

e

10X (Note 3)

R

SC

e

0X,A

V

e

1,

g

10.5g11

g

10.5g11 I V

R

L

e

5X (Note 3)

CMRR Common-Mode V

IN

e

g

10V

85 100 85 100 I dB

Rejection Ratio

PSRR Power Supply

g

5VsV

S

s

g

15V 85 100 85 100 I dB

Rejection Ratio

a

5VsVS(a)

s

a

15V,

80 110 80 110 I dB

V

S

(b)eb15V

b

5VtVS(b)

t

b

15V,

80 95 80 95 I dB

VS(a)ea15V

I

S

Supply Current 28 35 28 35 I mA

AC Electrical Characteristics

V

S

e

g

15V, T

A

e

T

C

e

T

J

e

25§C

Parameter Description Test Conditions

ELH0101 ELH0101A

Level

Test

Units

Min Typ Max Min Typ Max

e

n

Equivalent Input fe1 kHz

25 25 V nV/

0

Hz

Noise Voltage

C

IN

Input Capacitance fe1 MHz 3 3 V pF

PBW Power Bandwidth, R

L

e

10X,A

V

e

1

300 300 V kHz

b

3dB

SR Slew Rate R

L

e

10X,A

V

e

1

7.5 10 7.5 10 I Vms

ELH0101AK

tr,t

f

Small Signal Rise R

L

e

10X,A

V

e

1

200 200 V ns

or Fall Time

Small Signal R

L

e

10X,A

V

e

1

10 10 V %

Overshoot

3

TDis 3.5inTDis 2.2in

ELH0101/883/8508901/2YX

Power Operational Amplifier

AC Electrical Characteristics

V

S

e

g

15V, T

A

e

T

C

e

T

J

e

25§C Ð Contd.

Parameter Description Test Conditions

ELH0101 ELH0101A

Level

Test

Units

Min Typ Max Min Typ Max

GBW Gain-Bandwidth R

L

e %

,A

V

e

1

4 5 4 5 I MHz

Product ELH0101AK

t

S

Large Signal
Settling Time R

L

e %

,A

V

e

12 2Vms

(0.01%)

THD Total Harmonic fe1 kHz, P

O

e

0.5W,

0.008 0.008 V %

Distortion R

L

e

10X

Note 1: Specification is at T

A

e

25§C. Actual values at operating temperature may differ from the T

A

e

25§C value. When supply

voltages are

g

15V, quiescent operating junction temperature will rise approximately 20§C without heatsinking. Accordingly,

V

OS

may change 0.5 mV and IBand IOSwill change significantly during warm-ups. Refer to IBvs. temperature and power

dissipation graphs for expected values.

Note 2: Change in offset voltage with dissipated power is due entirely to average device temperature rise and not to differential

thermal feedback effects. Test is performed without any heatsink.

Note 3: At light loads, the output swing may be limited by the second stage rather than the output stage. See the application section

under ‘‘Output swing enhancement’’ for hints on how to obtain extended operation. R

SC

is the current sense resistor.

4

TDis 1.5in

ELH0101/883/8508901/2YX

Power Operational Amplifier

Typical Performance Curves

Power Dissipation

Safe Operating Area Current

Quiescent Power Supply

Input Bias Current Warm-up

Input Bias Current After

Voltage Range

Input Common-Mode

Frequency Response

Open-Loop Small Signal

Frequency

Output Voltage Swing vs

Ratio vs Frequency

Common-Mode Rejection

0101– 3

5