ELANT ELH0041G-883B Datasheet
ELH0041G/883/8508701ZX September 1992 Rev G
ELH0041G/883/8508701ZX
0.1 Amp Power Operational Amplifier
Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a ‘‘controlled document’’. Current revisions, if any, to these
specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation. Patent pending.
©
1989 Elantec, Inc.
Features
# High output currentÐ200 mA
# Excellent open-loop
gainÐ106 dB
# Low offset voltageÐ1 mV
# Wide full power
bandwidthÐ20 kHz
# High slew rateÐ3 V/ms
# MIL-STD-883 devices 100%
manufactured in U.S.A.
Ordering Information
Part No. Temp. Range Pkg. Outline
Ý
ELH0041G/883Bb55§Ctoa125§C TO-8 MDP002
8508701ZX is the SMD version of this device.
Connection Diagram
0041– 1
Top View
General Description
The ELH0041 are general purpose operational amplifiers capable of delivering large output currents not usually associated
with conventional IC op amps; the ELH0041 delivers currents
of 200 mA at voltage levels closely approaching the available
power supplies. In addition, both the inputs and outputs are
protected against overload. These devices are compensated with
a single external capacitor and are free of any unusual oscillation or latch-up problems.
For applications requiring output currents in excess of 1A, see
the ELH0021 data sheet.
The excellent input characteristics and high output capability
of the ELH0041 make it an ideal choice for power applications
such as DC servos, capstan drivers, deflection yoke drivers, and
programmable power supplies.
The ELH0041 is particularly suited for applications such as
torque drivers for inertial guidance systems, diddle yoke drivers
for alphanumeric CRT displays, cable drivers, and programmable power supplies for automatic test equipment.
Elantec facilities comply with MIL-I-45208A and other applicable quality specifications. Elantec’s Military devices are 100%
fabricated and assembled in our rigidly controlled, ultra-clean
facilities in Milpitas, California. For additional information on
Elantec’s Quality and Reliability Assurance policy and procedures request brochure QRA-1.
Burn-In Circuit
0041– 2
Equivalent Schematic
0041– 3
ELH0041G/883/8508701ZX
0.1 Amp Power Operational Amplifier
Absolute Maximum Ratings
(T
A
e
25§C)
V
S
Supply Voltage
g
18V
V
IN
Input Voltage (Note 1)
g
15V
P
D
Power Dissipation (See curves)
Differential Input Voltage
g
30V
Peak Output Current (Note 2) 0.5A
Output Short Circuit
Duration (Note 3) Continuous
T
A
Operating Temperature Range
ELH0041
b
55§Ctoa125§C
T
ST
Storage Temperature
b
65§Ctoa150§C
Lead Temperature
(Soldering, 10 seconds) 300
§
C
Important Note:
All parameters having Min/Max specifications are guaranteed. The Test Level column indicates the specific device testing actually
performed during production and Quality inspection. Elantec performs most electrical tests using modern high-speed automatic test
equipment, specifically the LTX77 Series system. Unless otherwise noted, all tests are pulsed tests, therefore T
J
e
T
C
e
TA.
Test Level Test Procedure
I 100% production tested and QA sample tested per QA test plan QCX0002.
II 100% production tested at T
A
e
25§C and QA sample tested at T
A
e
25§C,
T
MAX
and T
MIN
per QA test plan QCX0002.
III QA sample tested per QA test plan QCX0002.
IV Parameter is guaranteed (but not tested) by Design and Characterization Data.
V Parameter is typical value at T
A
e
25§C for information purposes only.
DC Electrical Characteristics
V
S
e
g
15V, T
MIN
s
T
A
s
T
MAX,CC
e
3000 pF
Parameter Description Test Conditions
ELH0041
Units
Min Typ Max
Test
Level
V
OS
Input Offset Voltage R
S
s
100X,T
A
e
25§C (Note 4) 1 3 I mV
R
S
s
100X (Note 4) 5 I mV
DVOS/DT Voltage Drift R
S
s
100X
3VmV/
§
C
with Temperature
Offset Voltage Drift T
A
e
25§C
5VmV/
0
wk
with Time
DVOS/DP Offset Voltage
Change with 15 V mV/W
Output Power
Offset Voltage
20 V mV
Adjustment Range
I
OS
Input Offset Current T
A
e
25§C (Note 4) 30 100 I nA
(Note 4) 300 I nA
Offset Current Drift
0.1 1 IV nA/
§
C
with Temperature
Offset Current Drift T
A
e
25§C
2 V nA/
0
wk
with Time
I
B
Input Bias T
A
e
25§C (Note 4) 100 300 I nA
Current
(Note 4) 1 I mA
R
IN
Input Resistance T
A
e
25§C 0.3 1 I MX
2
TDis 3.9in
ELH0041G/883/8508701ZX
0.1 Amp Power Operational Amplifier
DC Electrical Characteristics
V
S
e
g
15V, T
MIN
s
T
A
s
T
MAX,CC
e
3000 pF Ð Contd.
Parameter Description Test Conditions
ELH0041
Units
Min Typ Max
Test
Level
CMRR Common-Mode R
S
s
100X,V
CM
e
g
10V
70 90 I dB
Rejection Ratio
V
INCM
Input Voltage Range
g
12 IV V
PSRR Power Supply R
S
s
100X,V
S
e
g
5V tog15V
80 96 I dB
Rejection Ratio
A
V
Voltage Gain V
O
e
g
10V, R
L
e
1kX,T
A
e
25§C 100 200 I V/mV
(Note 5)
V
O
e
g
10V, R
L
e
100X 25 I V/mV
V
O
Output Voltage Swing R
L
e
100X
g
13 14 I V
I
SC
Output Short T
A
e
25§C, R
SC
e
3.3X
200 300 I mA
Circuit Current
I
S
Supply Current V
OUT
e
0V 2.5 3.5 I mA
P
C
Power Consumption V
OUT
e
0V 75 105 I mW
Note 1: Rating applies for supply voltages aboveg15V. For supplies less thang15V, rating is equal to supply voltage.
Note 2: Rating applies for LH0041G with R
SC
e
0X.
Note 3: Rating applies as long as package power rating is not exceeded.
Note 4: Specifications apply for
g
5VsV
S
s
18V.
Note 5: The ELH0041, like all Class B amplifiers, has a ‘‘dead band’’ when V
OUT
is near zero volts. Typical values for the ‘‘dead
band’’ are in the 50 mVto200mV range. Open-loop gain is measured at V
OUT
from
g
0.5 VDCtog10 VDCwhich is out of
the range of the ‘‘dead band’’.
AC Electrical Characteristics
T
A
e
25§C, V
S
e
g
15V, C
C
e
3000 pF
Parameter Description Test Conditions
ELH0041
Units
Min Typ Max
Test
Level
SR Slew Rate A
V
e
1, R
L
e
100X 1.5 3 I V/ms
BW Bandwidth R
L
e
100X 20 V kHz
tr,t
f
Small Signal
0.3 1 I ms
Rise or Fall Time
Small Signal Overshoot 5 20 I %
t
S
Settling Time (0.1%) DV
IN
e
10V, A
V
e
14Vms
Overload Recovery Time 3 V ms
HD Harmonic Distortion fe1 kHz, P
O
e
0.5W 0.2 V %
E
N
Input Noise Voltage R
S
e
50X,BWe10 Hz to 10 kHz 5 V mV
rms
I
N
Input Noise Current BWe10 Hz to 10 kHz 0.05 V nA
rms
C
IN
Input Capacitance 3 V pF
3
TDis 2.6inTDis 2.5in
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