ELANT ELH0033G-883B Datasheet
ELH0033G/883/8001401ZX July 1992 Rev H
ELH0033G/883/8001401ZX
Fast Buffer Amplifier
Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a ‘‘controlled document’’. Current revisions, if any, to these
specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation. Patent pending.
©
1989 Elantec, Inc.
Features
# Slew rateÐ1500 V/ms
# Output driveÐ100 mA
# Rise and fall timesÐ2.9 ns
# Input resistanceÐ10
11
X
# Power bandwidthÐ100 MHz
# MIL-STD-883 devices 100%
manufactured in U.S.A.
Advantages
# Excellent phase linearity
# Driver cables and other
capacitive loads
# Wide supply range, single or split
Ordering Information
Part No. Temp. Range Package Outline
Ý
ELH0033G/883Bb55§Ctoa125§C TO-8 MDP0002
8001401ZX is the SMD version of this device.
Connection Diagram
12-Pin TO-8
0033– 1
Top View
Note: Case is electrically isolated.
General Description
The ELH0033 is a high-speed, FET input voltage follower buffer designed to provide high output currents from DC to over
100 MHz. The ELH0033 slews at 1500 V/ms and will drive 100X
loads. Phase linearity is excellent to 20 MHz, allowing the buffer to be included in op amp loops.
The ELH0033 is intended to fulfill a wide range of buffer applications such as high-speed line drivers, video impedance transformation, nuclear instrumentation amplifiers, op amp isolation
buffers for driving reactive loads and high impedance input
buffers for high-speed A to D’s and comparators.
These devices are constructed using specially selected junction
FETs and active laser trimming to achieve guaranteed performance specifications. The ELH0033 is specified for operation
from
b
55§Ctoa125§C.
Elantec facilities comply with MIL-I-45208A and other applicable quality specifications. Elantec’s Military devices are 100%
fabricated and assembled in our rigidly controlled, ultra-clean
facilities in Milpitas, California. For additional information on
Elantec’s Quality and Reliability Assurance policy and procedures request brochure QRA-1.
Equivalent Schematic
0033– 2
ELH0033G/883/8001401ZX
Fast Buffer Amplifier
Absolute Maximum Ratings
V
S
Supply Voltage (VabVb) 40V
V
IN
Input Voltage 40V
P
D
Power Dissipation (See Curves) 1.5W
I
OC
Continuous Output Current
g
100 mA
I
OP
Peak Output Current
g
250 mA
T
A
Operating Temperature Range
ELH0033
b
55§Ctoa125§C
T
J
Operating Junction Temperature 175§C
T
ST
Storage Temperature
b
65§Ctoa150§C
Lead Temperature
(Soldering, 10 seconds) 300
§
C
Important Note:
All parameters having Min/Max specifications are guaranteed. The Test Level column indicates the specific device testing actually
performed during production and Quality inspection. Elantec performs most electrical tests using modern high-speed automatic test
equipment, specifically the LTX77 Series system. Unless otherwise noted, all tests are pulsed tests, therefore T
J
e
T
C
e
TA.
Test Level Test Procedure
I 100% production tested and QA sample tested per QA test plan QCX0002.
II 100% production tested at T
A
e
25§C and QA sample tested at T
A
e
25§C,
T
MAX
and T
MIN
per QA test plan QCX0002.
III QA sample tested per QA test plan QCX0002.
IV Parameter is guaranteed (but not tested) by Design and Characterization Data.
V Parameter is typical value at T
A
e
25§C for information purposes only.
DC Electrical Characteristics
V
S
e
g
15V, V
IN
e
0V, T
MIN
s
T
A
s
T
MAX
Parameter Description Test Conditions
ELH0033
Units
Min Typ Max
Test
Level
V
OS
Output Offset R
S
s
100 kX,
510 I mV
Voltage T
J
e
25§C (Note 1)
R
S
s
100 kX 15 I mV
DVOS/DT Average Temperature
Coefficient of R
S
e
100X 50 V mV/§C
Offset Voltage
I
B
Input Bias Current T
J
e
25§C (Note 1) 250 I pA
T
A
e
25§C (Note 2) 2.5 IV nA
T
J
e
T
A
e
T
MAX
10 I nA
A
V
Voltage Gain R
S
e
100X,R
L
e
1kX,
0.97 0.98 1.00 I V/V
V
IN
e
g
10V
R
IN
Input Impedance R
L
e
1kX 10
10
10
11
IV X
T
J
e
25§C (Note 1),
10
10
10
11
I X
R
L
e
1kX
R
O
Output Impedance R
L
e
1kX,V
IN
e
g
1V 6 10 I X
V
O
Output Voltage V
IN
e
g
14V,
g
12 I V
Swing R
L
e
1kX
V
IN
e
g
10.5V,
g
9IV
R
L
e
100X,T
A
e
25§C
I
S
Supply Current 14.5 20 22 I mA
Power Consumption 600 660 I mW
Note 1: Specification is at 25§C junction temperature due to requirements of high-speed automatic testing. Actual values at operating
temperature will exceed the value at T
J
e
25§C. When supply voltages areg15V, no-load operating junction temperature
may rise 40
§
C–60§C above ambient and more under load conditions. Accordingly, VOSmay change one to several mV, and I
B
will change significantly during warm-up. Refer to IBvs temperature graph for expected values.
Note 2: Measured in still air 7 minutes after application of power.
2
TDis 3.4in
ELH0033G/883/8001401ZX
Fast Buffer Amplifier
AC Electrical Characteristics
T
C
e
25§C, V
S
e
g
15V, R
S
e
50X,R
L
e
1kX
Parameter Description Test Conditions
ELH0033
Units
Min Typ Max
Test
Level
SR Slew Rate V
IN
e
g
10V 1000 1500 III V/ms
BW Bandwidth V
IN
e
1V
rms
100 V MHz
Phase BWe1 MHz to 20 MHz
2V
§
Non-Linearity
t
r
Rise Time DV
IN
e
0.5V 2.9 V ns
t
p
Propagation Delay DV
IN
e
0.5V 1.2 V ns
HD Harmonic Distortion fl1 kHz
k
0.1 V %
A
V
Voltage Gain R
S
e
100X,
V
IN
e
1V
rms
, 0.97 0.98 1.00 I V/V
f
e
1 kHz
R
O
Output Impedance V
IN
e
1V
rms
,
610 I X
f
e
1 kHz
Typical Performance Curves
Dissipation
Maximum Power
Supply Voltage
Supply Current vs
Supply Voltage
Output Voltage vs
Response
Negative Pulse
Response
Positive Pulse
Frequency Response
0033– 3
3
TDis 2.3in
ELH0033G/883/8001401ZX
Fast Buffer Amplifier
Typical Performance Curves
Ð Contd.
vs Temperature
Rise and Fall Time
vs Temperature
Input Bias Current
Current During Warm-up
Normalized Input Bias
vs Input Voltage
Input Bias Current
0033– 4
Typical Applications
Offset Zero Adjust
0033– 5
Using Resistor
Current Limiting
0033– 6
Current Limiting
Using Current Sources
0033– 7
4
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